Integrated circuit having a single damascene wiring network
A method for fabricating a multi-layered wafer includes depositing a metal liner following by a seed layer including a metal in a trench arranged in an inter-metal dielectric (IMD). An end of the trench contacts a metal via of an interconnect structure. Heat is applied to drive the metal of the seed layer into the IMD and form a barrier layer along a sidewall of the trench.
1. A method of fabricating a wafer, the method comprising:
depositing a metal liner followed by a seed layer in a trench arranged in an inter-metal dielectric (IMD), an end of the trench contacting a metal via of an interconnect structure, and the seed layer comprising a metal; and
applying heat to drive the metal of the seed layer into the IMD and form a barrier layer along sidewalls of the trench and at least partially along sidewalls of the metal via.
2. The method of claim 1 , wherein the seed layer comprises manganese, copper, or a combination thereof.
3. The method of claim 1 further comprising depositing another metal to fill the trench.
4. The method of claim 3 , wherein the another metal comprises copper, tungsten, aluminum, cobalt, ruthenium, rhodium, platinum, or any combination thereof.
5. The method of claim 1 , wherein the barrier layer comprises a compound that results from reaction of the metal in the seed layer and a compound of the IMD.
6. The method of claim 1 , wherein the seed layer is manganese.
7. The method of claim 1 , wherein the seed layer comprises copper and manganese.
8. A method of fabricating a wafer, the method comprising:
depositing a metal liner following by a seed layer in a trench arranged in an inter-metal dielectric (IMD), an end of the trench contacting a metal via of an interconnect structure, the metal via comprising a metal fill, the seed layer comprising a first metal and a second metal; and
applying heat to drive the first metal into the IMD and form a barrier layer along a sidewall of the trench and at least partially along sidewalls of the metal via, the second metal remaining in the seed layer.
9. The method of claim 8 , wherein the first metal of the seed layer comprises manganese.
10. The method of claim 9 , wherein the second metal of the seed layer comprises copper.
11. The method of claim 8 further comprising depositing another metal to fill the trench.
12. The method of claim 11 , wherein the another metal comprises copper, tungsten, aluminum, cobalt, ruthenium, rhodium, platinum, or any combination thereof.
13. The method of claim 8 , wherein the barrier layer comprises a compound that results from reaction of the first metal and a compound of the IMD.
14. The method of claim 8 , wherein the barrier layer comprises MnSiO 3 .