Semiconductor device including conductive structure and method for manufacturing the same
A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.
1 . A semiconductor device comprising:
an insulating structure; and
a conductive structure in the insulating structure,
wherein the conductive structure comprises,
a barrier layer,
an anti-migration layer on the barrier layer,
a liner on the anti-migration layer,
a conductive layer on the liner, and
a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer,
wherein the capping layer and the liner comprise Co, and wherein the anti-migration layer comprises Mn;
wherein an upper portion of the anti-migration layer is between the capping layer and the liner.
2 . The semiconductor device according to claim 1 , wherein a thickness of the liner is smaller than a thickness of the capping layer.
3 . The semiconductor device according to claim 1 , wherein the anti-migration layer comprises an upper portion covering a top surface of the liner and a top surface of the conductive layer, and a lower portion covering an outer sidewall and a bottom surface of the liner.
4 . The semiconductor device according to claim 1 , wherein:
the barrier layer comprises a first barrier portion and a second barrier portion on the first barrier portion;
the first barrier portion comprises TaN; and
the second barrier portion comprises Ta.
5 . The semiconductor device according to claim 1 , wherein the liner comprises an upper portion covering a top surface of the conductive layer, and a lower portion covering an outer sidewall and a bottom surface of the conductive layer.
6 . The semiconductor device according to claim 1 , wherein:
the conductive layer comprises a first conductive portion, and a second conductive portion in the first conductive portion;
the first conductive portion comprises a CuMn alloy; and
the second conductive portion comprises Cu.
7 . A semiconductor device comprising:
an insulating structure;
and a conductive structure in the insulating structure,
wherein the conductive structure comprises,
a conductive layer,
a liner covering an outer sidewall of the conductive layer,
an anti-migration layer covering an outer sidewall of the liner,
a barrier layer covering an outer sidewall of the anti-migration layer, and
a capping layer covering a top surface of the anti-migration layer and a top surface of the barrier layer,
wherein an upper portion of the anti-migration layer comprises a bottom surface contacting a top surface of the liner.
8 . The semiconductor device according to claim 7 , wherein:
the liner and the capping layer comprise Co doped with an impurity; and
the impurity is at least one of N, P, W, or B.
9 . The semiconductor device according to claim 7 , wherein the bottom surface of the upper portion of the anti-migration layer contacts a top surface of the conductive layer.
10 . The semiconductor device according to claim 7 , wherein:
a maximum width in a horizontal direction of the capping layer is substantially equal to a distance in the horizontal direction between an uppermost portion of a first outer sidewall of the barrier layer and an uppermost portion of a second outer sidewall of the barrier layer; and
the first outer sidewall and the second outer sidewall of the barrier layer oppose each other.
11 . The semiconductor device according to claim 7 , wherein an upper portion of the liner comprises a top surface contacting the bottom surface of the upper portion of the anti-migration layer, and a bottom surface contacting a top surface of the conductive layer.
12 . The semiconductor device according to claim 7 , wherein:
the capping layer and the liner comprise a same conductive material; and
the capping layer and the liner are spaced apart from each other with the upper portion of the anti-migration layer therebetween.
13 . The semiconductor device according to claim 7 , wherein the barrier layer comprises TaN.
14 . A semiconductor device comprising:
an insulating structure; and
a conductive structure in the insulating structure,
wherein the conductive structure comprises,
a barrier layer,
an anti-migration layer on the barrier layer,
a liner on the anti-migration layer,
a conductive layer on the liner, and
a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer,
wherein a first sidewall of the capping layer is connected to a first outer sidewall of the barrier layer,
wherein a second side wall of the capping layer is connected to a second outer sidewall of the barrier layer,
wherein the liner is spaced apart from the capping layer, and
wherein the liner and the capping layer comprise Co.
15 . The semiconductor device according to claim 14 , wherein the first and second sidewalls of the capping layer are curved.
16 . The semiconductor device according to claim 14 , wherein:
the first sidewall of the capping layer contacts an uppermost portion of the first outer sidewall of the barrier layer; and
the second sidewall of the capping layer contacts an uppermost portion of the second outer sidewall of the barrier layer.
17 . The semiconductor device according to claim 14 , wherein an upper portion of the anti-migration layer is between the capping layer and the liner.
18 . The semiconductor device according to claim 14 , wherein, in a cross-sectional view, the anti-migration layer surrounds the conductive layer and the liner.