Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

1. A substrate processing apparatus comprising:

a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave;

a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas;

a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and

a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine,

wherein the process chamber includes an exhaust part configured to exhaust an internal atmosphere of the process chamber, and

wherein the substrate processing apparatus further comprises a controller configured to control an exhaust amount of the exhaust part, while opening the gate valve after processing the substrate, such that a portion of the purge gas supplied from the clean unit into the substrate transfer chamber flows into the process chamber.

2. The substrate processing apparatus of claim 1 , wherein the purge gas distribution mechanism includes a circulation path configured to circulate the purge gas and an exhaust path configured to exhaust the purge gas in a housing forming the substrate transfer chamber.

3. The substrate processing apparatus of claim 2 , wherein the purge gas distribution mechanism includes a pressure control mechanism configured to control an internal pressure of the substrate transfer chamber.

4. The substrate processing apparatus of claim 1 , wherein the process chamber further includes a gas supply part configured to supply a predetermined gas, and

wherein the controller is further configured to control the gas supply part such that a purge gas is supplied from the gas supply part while opening the gate valve.

5. The substrate processing apparatus of claim 1 , wherein the controller is further configured to control the exhaust part such that a flow rate of the purge gas flowing into the process chamber becomes smaller than an exhaust flow rate of the exhaust part.

6. The substrate processing apparatus of claim 1 , wherein the controller is further configured to control a flow rate of the purge gas flowing into the process chamber according to an opening degree of the gate valve.

7. The substrate processing apparatus of claim 1 , wherein the process chamber includes a gas flow rate measuring device configured to measure a flow rate of the purge gas flowing into the process chamber.

8. The substrate processing apparatus of claim 1 , wherein the purge gas from the clean unit is supplied into the substrate transfer chamber along a predetermined path, and

wherein the controller is configured to control the exhaust part such that a ratio between a flow rate of the purge gas flowing into the process chamber and a flow rate of the purge gas flowing into the substrate transfer chamber is equal to a ratio between a conductance of the exhaust part and a conductance of the predetermined path.

9. The substrate processing apparatus of claim 1 , wherein the substrate cooling mounting tool is provided with a ceiling plate having a diameter equal to or larger than a diameter of the substrate.

10. The substrate processing apparatus of claim 1 , wherein the substrate transfer chamber further includes a detector for detecting oxygen concentration in the substrate transfer chamber, and

wherein the controller is configured to control the purge gas distribution mechanism based on a detection value of the detector.

11. A method of manufacturing a semiconductor device in a substrate processing apparatus which includes:

a process chamber including an exhaust part configured to exhaust an internal atmosphere of the process chamber and a gate valve that opens and closes a loading/unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave;

a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas, a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber;

a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine; and

a controller configured to control an exhaust amount of the exhaust part, the method comprising:

transferring the substrate into the process chamber;

performing a predetermined modifying process by heating the substrate;

controlling, by the controller, the exhaust amount of the exhaust part, while opening the gate valve after performing the predetermined modifying process, such that a portion of the purge gas supplied from the clean unit into the substrate transfer chamber flows into the process chamber; and

cooling the substrate after the modifying process by mounting the substrate on the substrate cooling mounting tool by the transfer machine.

12. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus which includes: a process chamber including an exhaust part configured to exhaust an internal atmosphere of the process chamber and a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas, a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine; and a controller configured to control an exhaust amount of the exhaust part, to perform a process comprising:

transferring the substrate into the process chamber;

performing a predetermined modifying process by heating the substrate;

controlling, by the controller, the exhaust amount of the exhaust part, while opening the gate valve after performing the predetermined modifying process, such that a portion of the purge gas supplied from the clean unit into the substrate transfer chamber flows into the process chamber; and

cooling the substrate after the modifying process by mounting the substrate on the substrate cooling mounting tool by the transfer machine.