Anti-fuse cell and chip having anti-fuse cells

1. A chip, comprising a plurality of anti-fuse cells, each of the anti-fuse cells being coupled to a world line, a bit line and a program line, each of the anti-fuse cells comprising:

a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; and

an anti-fuse element, comprising a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer, the first conductive layer is coupled to the program line, and the second conductive layer is electrically coupled to the source node of the control device,

wherein the chip comprises a plurality of metal layers and the anti-fuse element is located at a layer having a level higher than or equal to a third level metal layer of the chip.

2. The chip of claim 1 , wherein

the first conductive layer is coupled to the program line through a first via, and

the second conductive layer is physically stacked upon and directly contact a metal layer among the plurality of metal layers of the chip and the metal layer of the chip is electrically coupled to the source node of the control device.

3. The chip of claim 2 wherein

the second conductive layer of the anti-fuse element is electrically connected to the source node of the control device through the metal layer and a second via.

4. The chip of claim 1 , wherein the first conductive layer and second conductive layer of the anti-fuse element are formed by a single conductive material or a plurality of stacked materials selected from a group consisting of Ti, TiN, Ni, Mo, Pt, Co, Ru, W, TaN, Cu and a combination thereof.

5. The chip of claim 1 , wherein the dielectric layer of the anti-fuse element is formed by a single dielectric material or a plurality of stacked dielectric materials selected from a group consisting of SiO2, SiOC, SiON, SiOCN, Si3N4, Carbon content oxide, Nitrogen content oxide, Carbon and Nitrogen content oxide, metal oxide dielectric, Hf oxide (HfO2), Ta oxide (Ta2O5), Ti oxide (TiO2), Zr oxide (ZrO2), Al oxide (Al 2 O 3 ), Y oxide (Y 2 O 3 ), multiple metal content oxide, and a combination thereof.

6. The chip of claim 1 , wherein

the word line is parallel to the program line in a first routing direction, and

the bit line is substantially perpendicular to first routing direction.

7. The chip of claim 1 , wherein

the word line is located at a metal layer that has a higher level than the first level metal layer, and

the program line is located at a metal layer that has a higher level than the metal layer of the word line.

8. The chip of claim 7 , wherein the plurality of the anti-fuse cell forms an array of anti-fuse cells, and the chip further comprising:

a plurality of landing pads, locating at a metal layer that has lower level than the metal layer of the program line, wherein the landing pads are configured to electrically coupled the program line to a driver circuit, the driver circuit is located outside the array of anti-fuse cells.

9. The chip of claim 8 , wherein the landing pads are located at a boundary of the array of anti-fuse cells.

10. The chip of claim 8 , the chip further comprising:

a plurality of non-anti-fuse cells, wherein the non-anti-fuse cells are located in a non-anti-fuse area, each of the anti-fuse elements of the anti-fuse cells are located in an anti-fuse area, and the non-anti-fuse area is separated from the anti-fuse area by at least one inter metal dielectric film.

11. The chip of claim 10 , wherein

each of the non-anti-fuse area and the anti-fuse area comprises a first etch stop dielectric layer and a second etch stop dielectric layer, and

the landing pads are located between the first etch stop dielectric layer and the second etch stop dielectric layer.

12. The chip of claim 11 , wherein the non-anti-fuse area further comprises:

an extra etch stop dielectric layer, located upon the first etch stop dielectric layer and the second etch stop dielectric layer.

13. An anti-fuse cell, being coupled to a world line, a bit line and a program line, the anti-fuse cell comprising:

a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; and

an anti-fuse element, comprising a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer,

wherein the second conductive layer of the anti-fuse element physically stacks upon and directly contacts a metal layer that is electrically connected to the source node of the control device through a first via, and first conductive layer of the anti-fuse element is electrically coupled to the program line through a second via.

14. The anti-fuse cell of claim 13 , wherein the anti-fuse element is included in a chip that comprises a plurality of metal layers and the anti-fuse element is located at a layer having a level higher than or equal to a third level metal layer of the chip.

15. The anti-fuse cell of claim 13 , wherein the first conductive layer and second conductive layer of the anti-fuse element are formed by a single conductive material or a plurality of stacked materials selected from a group consisting of Ti, TiN, Ni, Mo, Pt, Co, Ru, W, TaN, Cu or a combination thereof.

16. The anti-fuse cell of claim 13 , wherein the dielectric layer of the anti-fuse element is formed by a single dielectric material or a plurality of stacked dielectric materials selected from a group consisting of SiO2, SiOC, SiON, SiOCN, Si3N4, Carbon content oxide, Nitrogen content oxide, Carbon and Nitrogen content oxide, metal oxide dielectric, Hf oxide (HfO2), Ta oxide (Ta2O5), Ti oxide (TiO2), Zr oxide (ZrO2), Al oxide (Al 2 O 3 ), Y oxide (Y 2 O 3 ), multiple metal content oxide, or a combination thereof.

17. The anti-fuse cell of claim 13 , wherein

the word line is parallel to the program line in a first routing direction, and

the bit line is substantially perpendicular to first routing direction.

18. A chip, comprising:

anti-fuse cell, comprising an anti-fuse element located in an anti-fuse cell area, wherein the anti-fuse element comprises a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer; and

a non-anti-fuse cell located in a non-anti-fuse cell area, wherein the non-anti-fuse cell is separated from the anti-fuse cell by at least one inter metal dielectric film,

wherein each of the non-anti-fuse area and the anti-fuse area comprises a first etch stop dielectric layer and a second etch stop dielectric layer, and only the non-anti-fuse area comprises an extra etch stop dielectric layer that is located upon the first etch stop dielectric layer and the second etch stop dielectric layer.

19. The chip of claim 18 , wherein the anti-fuse cell further comprises:

a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line, wherein the first conductive layer is coupled to the program line, and the second conductive layer is electrically coupled to the source node of the control device.

20. The chip of claim 19 , wherein the extra etch stop dielectric layer of the non-anti-fuse cell is located in a same layer as the anti-fuse element of the anti-fuse cell.