Integrated circuit device and method of manufacturing the same
An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
1. An integrated circuit device comprising:
a substrate;
a conductive region on the substrate;
a lower electrode structure on the conductive region, the lower electrode structure including a main electrode part and a bridge electrode part, the main electrode part including an outer sidewall and a lower surface;
a dielectric layer contacting the outer sidewall of the main electrode part and contacting the bridge electrode part; and
an upper electrode above the lower electrode structure,
wherein the main electrode part is spaced apart from the conductive region and includes a first metal,
the bridge electrode part contacts the conductive region at a surface recessed from a top surface of the conductive region, contacts the lower surface of the main electrode part, and includes a second metal different from the first metal, and
the dielectric layer is between the upper electrode and the lower electrode structure.
2. The integrated circuit device according to claim 1 , wherein a cross-section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space,
the lower electrode structure further comprises a capping electrode part including a first part contacting the inner sidewall of the main electrode part and a second part protruding from the first part in a direction extending away from the substrate, the second part covering an uppermost surface of the main electrode part, and
the capping electrode part includes a third metal different from the first metal.
3. The integrated circuit device according to claim 2 , wherein at least one of
(a) the second metal includes the third metal,
(b) the third metal includes the second metal, or
(c) the second metal is the same as the third metal.
4. The integrated circuit device according to claim 2 , wherein the dielectric layer contacts the capping electrode part outside of the internal space of the main electrode part.
5. The integrated circuit device according to claim 2 , wherein the dielectric layer contacts the capping electrode part in the internal space of the main electrode part.
6. The integrated circuit device according to claim 1 , further comprising:
at least one supporting layer configured to support the lower electrode structure,
wherein the lower electrode structure further includes at least one protrusion electrode part extending from the main electrode part toward the at least one supporting layer, and
the at least one protrusion electrode part and the bridge electrode part include the same material.
7. The integrated circuit device according to claim 1 , wherein a cross section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space, and
the dielectric layer contacts the inner sidewall of the main electrode part in the internal space of the main electrode part.
8. The integrated circuit device according to claim 1 , wherein a cross-section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space,
the lower electrode structure further comprises a capping electrode part filling completely the internal space of the main electrode part, and
the capping electrode part includes a material having a lower resistivity than the first metal of the main electrode part.
9. The integrated circuit device according to claim 1 , wherein a cross-section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space, and
the lower electrode structure comprises a capping electrode part including,
a first part contacting the inner sidewall of the main electrode part,
a second part covering an uppermost surface of the main electrode part, and
at least one protrusion electrode part extending outward from the outer sidewall of the main electrode part in a radial direction.
10. The integrated circuit device according to claim 9 , wherein the bridge electrode part, the capping electrode part, and the at least one protrusion electrode part include the same material.
11. The integrated circuit device according to claim 1 , wherein the main electrode part includes niobium (Nb), and
the dielectric layer includes an HfO 2 layer having a tetragonal phase.
12. The integrated circuit device of claim 1 , wherein a width of the bridge electrode part in a first direction is less than a width of the conductive region in the first direction, the first direction parallel to a surface of the substrate.
13. An integrated circuit device comprising:
a substrate;
a conductive region on the substrate;
a lower electrode structure on the conductive region, the lower electrode structure including a main electrode part and a bridge electrode part, the main electrode part including an outer sidewall and a lower surface;
a dielectric layer contacting the outer sidewall of the main electrode part and contacting the bridge electrode part; and
an upper electrode above the lower electrode structure,
wherein the main electrode part is spaced apart from the conductive region and includes a first metal,
the bridge electrode part contacts the lower surface of the main electrode part and includes a second metal different from the first metal, and
the dielectric layer is between the upper electrode and the lower electrode structure,
wherein a cross-section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space,
the lower electrode structure further comprises a capping electrode part including a first part contacting the inner sidewall of the main electrode part and a second part protruding from the first part in a direction extending away from the substrate, the second part covering an uppermost surface of the main electrode part,
the capping electrode part includes a third metal different from the first metal, and
the dielectric layer contacts the capping electrode part in the internal space of the main electrode part.
14. The integrated circuit device of claim 13 , wherein
the main electrode part includes niobium (Nb), and
the dielectric layer includes an HfO 2 layer having a tetragonal phase.
15. The integrated circuit device of claim 14 , wherein
at least one of (a) the second metal includes the third metal, (b) the third metal includes the second metal, or (c) the second metal is the same as the third metal.
16. The integrated circuit device according to claim 14 , wherein the dielectric layer contacts the capping electrode part outside of the internal space of the main electrode part.
17. An integrated circuit device comprising:
a substrate;
a conductive region on the substrate;
a lower electrode structure on the conductive region, the lower electrode structure including a main electrode part and a bridge electrode part, the main electrode part including an outer sidewall and a lower surface;
a dielectric layer contacting the outer sidewall of the main electrode part and contacting the bridge electrode part; and
an upper electrode above the lower electrode structure,
wherein the main electrode part is spaced apart from the conductive region and includes a first metal,
the bridge electrode part contacts the lower surface of the main electrode part and includes a second metal different from the first metal,
the dielectric layer is between the upper electrode and the lower electrode structure,
a cross-section of the main electrode part includes a cup-shape with an inner sidewall defining an internal space, and
the lower electrode structure comprises a capping electrode part including,
a first part contacting the inner sidewall of the main electrode part,
a second part covering an uppermost surface of the main electrode part, and
at least one protrusion electrode part extending outward from the outer sidewall of the main electrode part in a radial direction.
18. The integrated circuit device according to claim 17 , wherein
the main electrode part includes niobium (Nb), and
the dielectric layer includes an HfO 2 layer having a tetragonal phase.
19. The integrated circuit device according to claim 17 , wherein the bridge electrode part, the capping electrode part, and the at least one protrusion electrode part include the same material.
20. The integrated circuit device according to claim 17 , wherein the dielectric layer contacts the inner sidewall of the main electrode part in the internal space of the main electrode part.