Control circuit and method of operating a control circuit
View Patent ↗Various embodiments provide a control circuit that includes at least one active module designed to enable an avalanche diode. The control circuit also includes at least one passive module designed to disable the avalanche diode.
1. A circuit, comprising:
an avalanche diode;
an active module configured to enable the avalanche diode and apply a first reverse bias voltage to the avalanche diode, the first reverse bias voltage being equal to or greater than a breakdown voltage of the avalanche diode, the active module including a first control signal generator configured to generate a first control signal and, a first switch configured to be controlled by the first control signal to connect and disconnect the avalanche diode to a first voltage input; and
a passive module configured to disable the avalanche diode and apply a second reverse bias voltage to the avalanche diode, the second reverse bias voltage being less than the breakdown voltage, the passive module including a clamp diode coupled to a second voltage input, the first switch, and the avalanche diode.
2. The circuit of claim 1 wherein the clamp diode includes a cathode coupled to the second voltage input and an anode coupled to an anode of the avalanche diode.
3. The circuit of claim 1 wherein the first switch is a metal-oxide-semiconductor (MOS) switch.
4. The circuit of claim 1 wherein the first switch is an N type metal-oxide-semiconductor (NMOS) switch.
5. The circuit of claim 1 wherein the first switch is an N type extended drain metal-oxide-semiconductor (NEDMOS) switch.
6. The circuit of claim 1 wherein the active module includes a second control signal generator configured to generate a second control signal, and a second switch configured to be controlled by the second control signal to connect and disconnect avalanche diode to the first voltage input.
7. The circuit of claim 6 wherein the second switch is a metal-oxide-semiconductor (MOS) switch.
8. The circuit of claim 6 wherein the second switch is an N type metal-oxide-semiconductor (NMOS) switch.
9. The circuit of claim 6 wherein the second switch is an N type extended drain metal-oxide-semiconductor (NEDMOS) switch.
10. A system, comprising:
an avalanche diode; and
a control circuit configured to control the avalanche diode, the control circuit including:
a first switch coupled between an anode of the avalanche diode and a first voltage supply;
a clamp diode coupled between the anode of the avalanche diode and a second voltage supply; and
a resistor coupled between a cathode of the avalanche diode and a third voltage supply.
11. The system of claim 10 wherein the control circuit further includes a detector coupled to the cathode of the avalanche diode, and the detector is configured to detect an increase in an electrical current.
12. The system of claim 11 wherein the control circuit further includes a capacitor coupled between the detector and the cathode of the avalanche diode.
13. The system of claim 10 wherein the control circuit further includes a second switch coupled between the anode of the avalanche diode and the first switch.
14. The system of claim 13 , further comprising:
a first control signal generator configured to generate a first control signal to open and close the first switch; and
a second control signal generator configured to generate a second control signal to open and close the second switch.
15. The system of claim 14 wherein the first control signal alternates between first and second voltage levels, and the second control signal is constant.
16. A method, comprising:
generating a control signal that alternates between a first voltage level and a second voltage level;
applying the control signal to a control circuit for an avalanche diode, the control circuit including a first switch coupled between the avalanche diode and a first voltage supply, a clamp diode coupled between the avalanche diode and a second voltage supply, and a resistor coupled between the avalanche diode and a third voltage supply;
closing the first switch when the control signal has the first voltage level; and
opening the first switch when the control signal has the second voltage level.
17. The method of claim 16 , further comprising:
receiving, by the avalanche diode, a photon; and
detecting an electrical current though the avalanche diode in response to the photon being received by the avalanche diode.
18. The method of claim 16 , further comprising:
applying a first reverse bias voltage to the avalanche diode when the control signal has the first voltage level, the first reverse bias voltage being greater than a breakdown voltage of the avalanche diode; and
applying a second reverse bias voltage to the avalanche diode when the control signal has the second voltage level, the second reverse bias voltage being less than the breakdown voltage of the avalanche diode.
19. The circuit of claim 1 wherein the first switch and an anode of the clamp diode are coupled to an anode of the avalanche diode, and a cathode of the clamp diode is coupled to the second voltage input.
20. The circuit of claim 1 , further comprising:
a resistor coupled to a cathode of the avalanche diode and a third voltage input, an anode of the avalanche diode being coupled to the first switch and an anode of the clamp diode.
21. A circuit, comprising:
an avalanche diode;
an active module configured to enable the avalanche diode and apply a first reverse bias voltage to the avalanche diode, the first reverse bias voltage being equal to or greater than a breakdown voltage of the avalanche diode, the active module including:
a first control signal generator configured to generate a first control signal,
a first switch configured to be controlled by the first control signal to connect and disconnect the avalanche diode to a voltage supply,
a second control signal generator configured to generate a second control signal, and
a second switch configured to be controlled by the second control signal to connect and disconnect avalanche diode to the voltage supply; and
a passive module configured to disable the avalanche diode and apply a second reverse bias voltage to the avalanche diode, the second reverse bias voltage being less than the breakdown voltage.
22. The circuit of claim 21 wherein the second switch is a metal-oxide-semiconductor (MOS) switch.
23. The circuit of claim 21 wherein the second switch is an N type metal-oxide-semiconductor (NMOS) switch.
24. The circuit of claim 21 wherein the second switch is an N type extended drain metal-oxide-semiconductor (NEDMOS) switch.