Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits
A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. Each of the PCM RF switches includes a PCM, a heating element transverse to the PCM, and first and second heating element contacts. The first heating element contact is coupled to an RF ground, and the second heating element contact may also be coupled to an RF ground. Each of the PCM RF switches can also include first and second PCM contacts. A compensation capacitor can be coupled across the first and second PCM contacts in at least one of the PCM RF switches.
1. A circuit comprising:
a plurality of stacked phase-change material (PCM) radio frequency (RF) switches;
a PCM RF switch in said plurality of stacked PCM RF switches including:
a PCM;
a heating element transverse to said PCM;
first and second heating element contacts, wherein said first heating element contact is electrically coupled to an RF ground when said PCM RF switch is in an OFF state.
2. The circuit of claim 1 , wherein said second heating element contact is electrically coupled to an RF ground when said PCM RF switch is in an OFF state.
3. The circuit of claim 1 , wherein said heating element approximately underlies an active segment of said PCM.
4. The circuit of claim 1 , wherein said PCM comprises material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass.
5. The circuit of claim 1 , wherein said circuit is situated in an RF receive chain between an antenna and a low noise amplifier (LNA).
6. The circuit of claim 1 , wherein said circuit is situated in an RF transmit chain between a power amplifier and an antenna.
7. The circuit of claim 1 , wherein said PCM RF switch further includes PCM contacts situated on passive segments of said PCM.
8. The circuit of claim 1 , wherein said PCM RF switch further includes a thermally conductive and electrically insulating material situated over said heating element.
9. The circuit of claim 8 , wherein said thermally conductive and electrically insulating material is selected from the group consisting of silicon carbide (Si X C Y ), aluminum nitride (Al X N Y ), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), diamond, and diamond-like carbon.
10. The circuit of claim 1 , wherein said heating element comprises a material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium tungsten (TiW), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).
11. A circuit comprising:
a plurality of stacked phase-change material (PCM) radio frequency (RF) switches;
each of said PCM RF switches including:
a PCM;
a heating element transverse to said PCM;
first and second PCM contacts;
first and second heating element contacts, wherein said first heating element contact is coupled to an RF ground;
a compensation capacitor coupled across said first and second PCM contacts in at least one of said PCM RF switches.
12. The circuit of claim 11 , wherein said second heating element contact is coupled to said RF ground.
13. The circuit of claim 11 , wherein said heating element approximately underlies an active segment of said PCM.
14. The circuit of claim 11 , wherein said PCM comprises material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass.
15. The circuit of claim 11 , wherein said circuit is situated in an RF receive chain between an antenna and a low noise amplifier (LNA).
16. The circuit of claim 11 , wherein said circuit is situated in an RF transmit chain between a power amplifier and an antenna.
17. The circuit of claim 11 , wherein said first and second PCM contacts are situated on passive segments of said PCM.
18. The circuit of claim 11 , wherein each of said PCM RF switches further includes a thermally conductive and electrically insulating material situated over said heating element.
19. The circuit of claim 18 , wherein said thermally conductive and electrically insulating material is selected from the group consisting of silicon carbide (Si X C Y ), aluminum nitride (Al X N Y ), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), diamond, and diamond-like carbon.
20. The circuit of claim 11 , wherein said heating element comprises a material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium tungsten (TiW), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).