Methods and apparatus for controlling ion fraction in physical vapor deposition processes

1. A process chamber for processing a substrate having a given diameter, comprising:

a body having an interior volume and a lid assembly including a target to be sputtered, wherein the interior volume includes a central portion having a diameter that is about equal to the given diameter and a peripheral portion surrounding the central portion;

the process chamber comprises magnets, wherein the magnets consist of a magnetron with a plurality of magnets, a first set of magnets, a second set of magnets, and a third set of magnets,

the magnetron disposed above the target, wherein the magnetron is configured to rotate the plurality of magnets about a central axis of the process chamber to form an annular plasma in the peripheral portion of the interior volume;

a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate having the given diameter;

a collimator disposed in the interior volume between the target and the substrate support;

a collimator power source coupled to the collimator and configured to bias the collimator;

the first set of magnets disposed about the body, proximate the target, and above the collimator to form a magnetic field having substantially vertical magnetic field lines in the peripheral portion of the interior volume, wherein a plane of a substrate-facing surface of the target intersects the first set of magnets above the collimator;

the second set of magnets disposed about the body above the support surface of the substrate support to form a magnetic field having magnetic field lines directed toward a center of the support surface;

the third set of magnets disposed about the body at a height even with or below a substrate-facing surface of the collimator, wherein the third set of magnets are configured to create a magnetic field having magnetic field lines directed inward and downward toward the central portion and toward the center of the support surface;

wherein the first set of magnets are disposed about the body at a height above a target-facing surface of the collimator,

wherein the second set of magnets are disposed about the body at a height that is above the substrate,

wherein the third set of magnets are disposed about the body at a height even with or below a substrate-facing surface of the collimator, above the second set of magnets, and below the first set of magnets,

wherein the second set of magnets is disposed about the body and entirely below the collimator and a third set of magnets;

a first power source coupled to the target to electrically bias the target;

a second power source coupled to the substrate support to electrically bias the substrate support; and

a controller configured to control the magnetron to form the annular plasma, the first power source and the second power source to respectively bias the target and the substrate support relative to each other to maintain the annular plasma formed over the collimator and, while maintaining the annular plasma over the collimator, controlling the collimator power source to bias the collimator to control a ratio of ions and neutrals of sputter material through the collimator, the first set of magnets to guide the ions through the collimator, and the second set of magnets to guide the ions toward a center of the support surface.

2. The process chamber of claim 1 , wherein the collimator includes a central region having a diameter equal to or greater than the given diameter, and a peripheral region surrounding the central region, wherein a thickness of the collimator in the central region is greater than a thickness of the collimator in the peripheral region.

3. The process chamber of claim 1 , wherein the collimator is spaced apart from the support surface of the substrate support by a first height of about 400 mm to about 600 mm.

4. The process chamber of claim 1 , wherein the collimator is spaced apart from the target by a second height of about 25 mm to about 75 mm.

5. The process chamber of claim 1 , wherein the radius of rotation is between about the given diameter and an inner diameter of the interior volume.

6. The process chamber of claim 1 , wherein the radius of rotation is adjustable between about 5.5 inches to about 7 inches.

7. The process chamber of claim 1 , wherein the second power source is configured to draw sputtered material towards a center of the substrate support.

8. A process chamber for processing a substrate having a given diameter, comprising:

a body having an interior volume and a lid assembly including a target to be sputtered, wherein the interior volume includes a central portion having a diameter that is about equal to the given diameter and a peripheral portion surrounding the central portion;

the process chamber comprises magnets, wherein the magnets consist of a magnetron with a plurality of magnets, a first set of magnets, a second set of magnets, and a third set of magnets,

the magnetron disposed above the target, wherein the magnetron is configured to rotate the plurality of magnets about a central axis of the process chamber to form a plasma in the peripheral portion of the interior volume;

a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate having the given diameter;

a collimator disposed in the interior volume between the target and the substrate support;

a collimator power source coupled to the collimator and configured to bias the collimator;

the first set of magnets disposed about the body, proximate the target, and above the collimator to form a magnetic field having substantially vertical magnetic field lines in the peripheral portion and through the collimator, wherein a plane of a substrate-facing surface of the target intersects the first set of magnets above the collimator;

the second set of magnets disposed about the body and above the support surface of the substrate support to form a magnetic field having magnetic field lines directed toward a center of the support surface;

the third set of magnets disposed about the body at a height even with or below a substrate-facing surface of the collimator, wherein the third set of magnets are configured to create a magnetic field having magnetic field lines directed inward and downward toward the central portion and toward the center of the support surface, wherein the second set of magnets is disposed entirely below the collimator and the third set of magnets;

wherein the first set of magnets are disposed about the body at a height above a target-facing surface of the collimator,

wherein the second set of magnets are disposed about the body at a height that is above the substrate,

wherein the third set of magnets are disposed about the body above the second set of magnets and below the first set of magnets, and

a first power source coupled to the target to electrically bias the target;

a second power source coupled to the substrate support to electrically bias the substrate support; and

a controller configured to control the magnetron to form the annular plasma, the first power source and the second power source to respectively bias the target and the substrate support relative to each other to maintain the annular plasma formed over the collimator and, while maintaining the annular plasma over the collimator, controlling the collimator power source to bias the collimator to control a ratio of ions and neutrals of sputter material through the collimator, the first set of magnets to guide the ions through the collimator, the second set of magnets to guide the ions toward a center of the support surface, and the third set of magnets guide ions from the target towards a center of the substrate.