Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus

1. A plasma processing method, comprising:

loading a substrate onto a lower electrode within a chamber;

applying a plasma power to form plasma within the chamber;

generating a voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion, including setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function, in order to control an ion energy distribution generated at a surface of the substrate; and

applying a bias power of the nonsinusoidal wave to the lower electrode,

wherein setting the slope of the ramp portion and the duration ratio of the ramp portion to the cycle of the voltage function comprises:

adjusting the slope of the ramp portion based on a voltage to be induced in the substrate to generate the ion energy distribution having a predetermined narrow single peak; and

adjusting the duration ratio of the ramp portion to the cycle of the voltage function to reduce an etch difference between openings having different sizes to be formed on the substrate.

2. The plasma processing method of claim 1 , wherein the slope of the ramp portion is set such that a voltage having a constant value is induced on the substrate while the ramp portion of the bias power is applied to the lower electrode.

3. The plasma processing method of claim 1 , wherein the duration ratio of the ramp portion to the cycle of the voltage function is adjusted to minimize the etch difference.

4. The plasma processing method of claim 1 , wherein the duration ratio of the ramp portion to the cycle of the voltage function is adjusted while maintaining the adjusted slope of the ramp portion at a determined value.

5. The plasma processing method of claim 1 , further comprising:

adjusting an on/off duty ratio of the nonsinusoidal wave to adjust an ion flux moving toward the substrate.

6. The plasma processing method of claim 5 , wherein the on/off duty ratio of the nonsinusoidal wave is adjusted within a range greater than 5% and less than 95% of a process period.

7. The plasma processing method of claim 1 , wherein the ramp portion has a waveform having a negative slope throughout the ramp portion.

8. The plasma processing method of claim 1 , wherein generating the voltage function of the nonsinusoidal wave comprises determining a positive voltage value of the DC pulse portion and a voltage value of the ramp portion.

9. The plasma processing method of claim 1 , further comprising:

monitoring the bias power applied to the lower electrode.

10. A plasma processing method, comprising:

loading a semiconductor substrate onto a lower electrode within a chamber, the semiconductor substrate including a photoresist pattern having openings;

applying a plasma power to form plasma within the chamber;

generating a voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion, including setting a slope of the ramp portion and a duration ratio of the ramp portion to a cycle of the voltage function to reduce an etch difference between different openings to be formed on the semiconductor substrate; and

applying a bias power of the nonsinusoidal wave to the lower electrode,

wherein setting the slope of the ramp portion and the duration ratio of the ramp portion to the cycle of the voltage function comprises:

adjusting the slope of the ramp portion based on a voltage to be induced in the substrate in order to control an ion energy distribution having a predetermined narrow single peak; and

adjusting the duration ratio of the ramp portion to the cycle of the voltage function to reduce an etch difference between openings having different sizes to be formed on the substrate.

11. The plasma processing method of claim 10 , wherein the duration ratio of the ramp portion to the cycle of the voltage function is set to minimize the etch difference.

12. The plasma processing method of claim 10 , wherein the slope of the ramp portion is set such that a voltage having a constant value is induced in the semiconductor substrate while the ramp portion of the bias power is applied to the lower electrode.

13. The plasma processing method of claim 10 , wherein the slope of the ramp portion is set such that an ion energy distribution is generated in a surface of the semiconductor substrate.

14. The plasma processing method of claim 10 , wherein the openings include a first opening having a first diameter and a second opening having a second diameter greater than the first diameter.

15. The plasma processing method of claim 10 , further comprising:

adjusting an on/off duty ratio of the nonsinusoidal wave to adjust an ion flux moving toward the semiconductor substrate.

16. The plasma processing method of claim 15 , wherein the on/off duty ratio of the nonsinusoidal wave is adjusted within a range greater than 5% and less than 95% of a process period.

17. The plasma processing method of claim 10 , wherein the ramp portion has a waveform gradually decreasing throughout the ramp portion.

18. The plasma processing method of claim 10 , wherein generating the voltage function of the nonsinusoidal wave comprises determining a positive voltage value of the DC pulse portion and a voltage value of the ramp portion.

19. The plasma processing method of claim 10 , further comprising:

monitoring the bias power applied to the lower electrode.

20. A substrate processing method, comprising:

providing a substrate having an IC loading within an object layer;

loading the substrate on a lower electrode within a chamber;

supplying a process gas onto the substrate within the chamber;

applying a plasma power to form plasma within the chamber;

generating a determined voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion comprising:

determining a slope of the ramp portion based on a voltage to be induced in the substrate,

determining a duration ratio of the ramp portion to a cycle of the voltage function based on the IC loading, and

determining an on/off duty ratio of the nonsinusoidal wave based on an ion flux to be formed during etching the object layer, thereby providing the determined voltage function;

applying a bias power having the determined voltage function to the lower electrode; and

etching the object layer while applying the bias power to the lower electrode.