IP Library › Granted Patent US 11,037,862
Granted Patent B2
US 11,037,862 · App. 15/578,867 · Granted Jun 15, 2021

Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module

Inventors: Hubert Baueregger (Kissing, DE); Volkmar Sommer (Munich, DE); Stefan Stegmeier (Munich, DE)
Assignee: SIEMENS AKTIENGESELLSCHAFT
H01L23/49C25D3/38C25D5/18C25D21/14H01L23/4922H01L23/49537H01L23/49562H01L23/49568H01L23/49811H01L23/50H01L24/24H01L24/29H01L24/32H01L24/33H01L24/37H01L24/40H01L24/41H01L24/75H01L24/77H01L24/82H01L24/83H01L24/84H01L24/92H01L24/97H05K3/424H01L23/3733H01L23/3735H01L23/49513H01L24/05H01L2224/04026H01L2224/04034H01L2224/05624H01L2224/05639H01L2224/05644H01L2224/05647H01L2224/24105H01L2224/24227H01L2224/24245H01L2224/29111H01L2224/29139H01L2224/29144H01L2224/29147H01L2224/29155H01L2224/3207H01L2224/32227H01L2224/32245H01L2224/33181H01L2224/373H01L2224/37005H01L2224/376H01L2224/3719H01L2224/3729H01L2224/37111H01L2224/37124H01L2224/37139H01L2224/37144H01L2224/37147H01L2224/37155H01L2224/37166H01L2224/37211H01L2224/37224H01L2224/37239H01L2224/37244H01L2224/37247H01L2224/37255H01L2224/37266H01L2224/37395H01L2224/4007H01L2224/40227H01L2224/40499H01L2224/756H01L2224/75703H01L2224/776H01L2224/77703H01L2224/821H01L2224/82101H01L2224/831H01L2224/834H01L2224/836H01L2224/83007H01L2224/8349H01L2224/8359H01L2224/8385H01L2224/83411H01L2224/83424H01L2224/83439H01L2224/83444H01L2224/83447H01L2224/83455H01L2224/83466H01L2224/83511H01L2224/83524H01L2224/83539H01L2224/83544H01L2224/83547H01L2224/83555H01L2224/83566H01L2224/83695H01L2224/83907H01L2224/841H01L2224/84007H01L2224/8485H01L2224/8492H01L2224/84951H01L2224/9201H01L2224/9205H01L2224/9221H01L2224/97H01L2924/13055H01L2924/13091H01L2924/181
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Quick Facts
Patent No.
US 11,037,862
App. No.
15/578,867
Granted
Jun 15, 2021
Kind
B2
Abstract

The invention relates to a method for electrically contacting a component ( 10 ) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact ( 40, 50 ), at least one open-pored contact piece ( 60, 70 ) is galvanically (electrochemically or free of external current) connected to at least one contact ( 40, 50 ). In this way, a component module is achieved. The contact ( 40, 50 ) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact ( 40, 50 ) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component ( 10 ) can be contacted by means of the contact piece ( 60, 70 ) with a further component, a current conductor and/or a substrate ( 90 ). Preferably, a component ( 10 ) having two contacts ( 40, 50 ) on opposite sides of the component ( 10 ) is used, wherein at least one open-pored contact piece ( 60, 70 ) is galvanically connected to each contact ( 40, 50 ).

Claims (19)

1. A method for electrically contacting a component having a first component surface, a second component surface opposite the first component surface, and at least two electrical contacts, each of the at least two electrical contacts having a first contact surface and a second contact surface opposite the first contact surface, the second contact surface of a first electrical contact of the at least two electrical contacts being in contact with the first component surface of the component and the second contact surface of a second electrical contact of the at least two electrical contacts being in contact with the second component surface of the component, the method comprising:

galvanically connecting a first open-pored contact piece to the first contact surface of the first electrical contact and a second open-pored contact piece to the first contact surface of the second electrical contact of the at least two electrical contacts of the component, each of the first open-pored contact piece and the second open-pored contact piece having a plurality of open pores prior to being galvanically connected to the first electrical contact or the second electrical contact of the at least two electrical contacts.

2. The method of claim 1 , wherein each of the first electrical contact and the second electrical contact of the at least two electrical contacts is a flat part, has a respective contact surface, a largest planar extension of which is larger than an extension of the respective contact perpendicular to the respective contact surface, or a combination thereof.

3. The method of claim 1 , wherein an electrically conductive contact piece is used as the first open-pored contact piece or the second open-pored contact piece.

4. The method of claim 1 , wherein the first open-pored contact piece and the second open-pored contact piece is formed from or with porous material.

5. The method of claim 1 , wherein the first open-pored contact piece or the second open-pored contact piece is formed from or with metal.

6. The method of claim 5 , wherein the metal includes nickel, silver, gold, tin, copper, or any combination thereof.

7. The method of claim 1 , wherein the first open-pored contact piece and the second open-pored contact piece is formed with a tissue structure, a foam structure, a mesh structure, or any combination thereof.

8. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece and the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts at a temperature not exceeding 100° C., deviating from an operating temperature of the component by no more than 50° C., or a combination thereof.

9. The method of claim 8 , wherein galvanically connecting the first open-pored contact piece and the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts at a temperature not exceeding 5° C., deviating from the operating temperature of the component by no more than 2° C., or a combination thereof.

10. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece or the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece or the second open-pored contact piece using an electrochemical plating process.

11. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece or the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts by a method free of external current.

12. The method of claim 11 , wherein the method free of external current includes transfer metallization, reduction metallization, contact metallization, or any combination thereof.

13. The method of claim 1 , wherein the component is contacted with another component, a current conductor, with a substrate, or any combination thereof by one of the first open-pored contact piece or the second open-pored contact piece, and

wherein the method further comprises coating the one of the first open-pored contact piece or the second open-pored contact piece, the component, the other component, the current conductor, the substrate, or any combination thereof with an electrical insulation layer.

14. The method of claim 13 , wherein the coating comprises forming the electrical insulation layer, forming the electrical insulation layer comprising casting the insulation layer, molding the insulation layer, forming the insulation layer from or with siloxanes, polymers, or silxanes and polymers, or any combination thereof.

15. The method of claim 1 , wherein a power component is used as the component.

16. The method of claim 1 , wherein a component having at least one transistor is used as the component.

17. The method of claim 1 , wherein the first contact surface of the first electrical contact is a top surface and the second contact surface of the first electrical contact is a bottom surface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2018
From: BAUEREGGER, HUBERT; SOMMER, VOLKMAR; STEGMEIER, STEFAN
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 045449/0910 →
Priority Claims (1)
DE 10 2015 210 061.8 · Jun 1, 2015 · national
Continuity (1)
Related Publication 20180158757A1 · Jun 7, 2018
Cited By (1)
US 12,238,897