Single diffusion break local interconnect

1. A semiconductor device, comprising:

a first semiconductor region;

a second semiconductor region;

a dielectric region disposed between the first semiconductor region and the second semiconductor region, wherein the dielectric region comprises a shallow trench isolation (STI) region; and

a single diffusion break (SDB) intersecting at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises an electrically conductive portion.

2. The semiconductor device of claim 1 , wherein the conductive portion of the SDB is disposed above the at least one of the first semiconductor region or the second semiconductor region.

3. The semiconductor device of claim 1 , wherein:

the conductive portion of the SDB is disposed above the first semiconductor region and the second semiconductor region;

the SDB further comprises an insulator that intersects at least a portion of the second semiconductor region; and

a segment of the conductive portion of the SDB is disposed above the insulator.

4. The semiconductor device of claim 3 , wherein a portion of the insulator extends above a surface of the second semiconductor region and wherein the segment of the conductive portion is displaced from the second semiconductor region by the portion of the insulator.

5. The semiconductor device of claim 3 , further comprising a transistor comprising a portion of the first semiconductor region and another segment of the conductive portion of the SDB, wherein the other segment of the conductive portion is electrically coupled to the portion of the first semiconductor region and is a gate terminal of the transistor.

6. The semiconductor device of claim 5 , wherein the transistor is a p-type metal-oxide-semiconductor (PMOS) transistor or an n-type metal-oxide-semiconductor (NMOS) transistor.

7. The semiconductor device of claim 1 , wherein:

the SDB further comprises an insulator that intersects the first semiconductor region and the second semiconductor region; and

the conductive portion of the SDB is disposed above a segment of the insulator that intersects the second semiconductor region.

8. The semiconductor device of claim 7 , wherein:

another segment of the insulator extends above a surface of the second semiconductor region; and

the conductive portion of the SDB is displaced from the second semiconductor region by the other segment of the insulator.

9. The semiconductor device of claim 7 , further comprising:

a conductive trace disposed above the first semiconductor region and the second semiconductor region, wherein the conductive trace is laterally spaced from the SDB;

a first transistor comprising a portion of the first semiconductor region and a first segment of the conductive trace, wherein the first segment of the conductive trace is electrically coupled to the portion of the first semiconductor region and is a gate terminal of the first transistor; and

a second transistor comprising a portion of the second semiconductor region and a second segment of the conductive trace, wherein the second segment of the conductive trace is electrically coupled to the portion of the second semiconductor region and is a gate terminal of the second transistor.

10. The semiconductor device of claim 9 , further comprising:

an additional SDB intersecting the first semiconductor region and the second semiconductor region, wherein the additional SDB comprises an additional insulator that intersects the first semiconductor region and the second semiconductor region and wherein the first and second transistors are disposed between the SDB and the additional SDB.

11. A semiconductor device, comprising:

a first semiconductor region;

a second semiconductor region;

a dielectric region disposed between the first semiconductor region and the second semiconductor region;

a single diffusion break (SDB) intersecting at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises:

an electrically conductive portion disposed above the first semiconductor region and the second semiconductor region; and

an insulator that intersects the first semiconductor region and the second semiconductor region;

a conductive trace disposed above the first semiconductor region and the second semiconductor region, wherein the conductive trace is laterally spaced from the SDB;

a first transistor comprising a portion of the first semiconductor region and a first segment of the conductive trace, wherein the first segment of the conductive trace is electrically coupled to the portion of the first semiconductor region and is a gate terminal of the first transistor;

a second transistor comprising a portion of the second semiconductor region and a second segment of the conductive trace, wherein the second segment of the conductive trace is electrically coupled to the portion of the second semiconductor region and is a gate terminal of the second transistor; and

an additional SDB intersecting the first semiconductor region and the second semiconductor region, wherein:

the additional SDB is laterally spaced from the conductive trace;

the additional SDB comprises an additional insulator that intersects the first semiconductor region and the second semiconductor region; and

the first and second transistors are disposed between the SDB and the additional SDB.

12. The semiconductor device of claim 1 , further comprising a dielectric cap disposed above the conductive portion.

13. The semiconductor device of claim 1 , further comprising interlayer dielectric regions disposed above the first semiconductor region, the second semiconductor region, and the dielectric region, wherein the SDB is disposed between the interlayer dielectric regions.

14. A method of fabricating a semiconductor device, comprising:

forming a dielectric region between a first semiconductor region and a second semiconductor region, wherein the dielectric region comprises a shallow trench isolation (STI) region; and

forming a single diffusion break (SDB) that intersects at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises an electrically conductive portion.

15. The method of claim 14 , wherein forming the SDB comprises:

forming a cavity in a portion of the second semiconductor region;

forming an insulator in the cavity; and

forming a first segment of the conductive portion of the SDB above the insulator and a second segment of the conductive portion above a portion of the first semiconductor region.

16. The method of claim 14 , wherein forming the SDB comprises:

forming a cavity in a portion of the first semiconductor region and a portion of the second semiconductor region;

forming an insulator in the cavity; and

forming the conductive portion of the SDB above a segment of the insulator that intersects the second semiconductor region.

17. The method of claim 14 , wherein forming the SDB comprises:

forming a cavity in a portion of the first semiconductor region and a portion of the second semiconductor region;

forming an insulator in the cavity; and

forming the conductive portion above the insulator and above the first semiconductor region and the second semiconductor region.

18. The semiconductor device of claim 1 , wherein:

the first semiconductor region comprises a p+ doped semiconductor;

the second semiconductor region comprises an n+ doped semiconductor; and

the SDB intersects the dielectric region.

19. The semiconductor device of claim 18 , wherein:

the first semiconductor region is a PMOS region;

the second semiconductor region is an NMOS region;

the p+ doped semiconductor is a first implant region for a source or drain region; and

the n+ doped semiconductor is a second implant region for the source or drain region.

20. The semiconductor device of claim 11 , wherein:

the first semiconductor region comprises a p+ doped semiconductor; and

the second semiconductor region comprises an n+ doped semiconductor.