Diffusion-break region in stacked-FET integrated circuit device
A stacked field effect transistor (stacked-FET) device includes a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals, a diffusion break dielectric fill region adjacent to one of the first layer terminals, a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals, and a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the first layer and connecting with one of the second layer terminals.
1. A stacked field effect transistor (stacked-FET) device comprising:
a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals;
a diffusion break dielectric fill region adjacent to one of the first layer terminals;
a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals; and
a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the first layer and connecting with one of the second layer terminals.
2. The stacked-FET device of claim 1 , wherein the plurality of first layer terminals of the at least one first layer transistor structure comprises a first layer gate separating a first layer source region and a first layer drain region.
3. The stacked-FET device of claim 2 , wherein the plurality of second layer terminals of the at least one second layer transistor structure comprises a second layer gate separating a second layer source region and a second layer drain region.
4. The stacked-FET device of claim 3 , further comprising:
an interlayer dielectric layer disposed between the first layer and the second layer; and
wherein the contact wiring comprises a local interconnect structure passing through the interlayer dielectric layer.
5. The stacked-FET device of claim 3 , further comprising:
an oxide layer underlying the first layer; and
wherein the contact wiring passing through the diffusion break dielectric fill region further connects with the oxide layer.
6. The stacked-FET device of claim 3 , further comprising:
an additional first layer drain region; and
wherein the diffusion break dielectric fill region is adjacent to the first layer source region and is adjacent to the additional first layer drain region.
7. The stacked-FET device of claim 3 , further comprising:
a backside layer adjacent to the second layer; and
wherein the contact wiring connects with the second layer gate, and wherein each of the second layer source region and the second layer drain region comprises a backside contact.
8. The stacked-FET device of claim 3 , further comprising:
a backside layer adjacent to the second layer; and
wherein the contact wiring connects with the second layer source region, and wherein the second layer source region does not have any electrical contact structure formed from the second layer source region to the backside layer.
9. The stacked-FET device of claim 3 , further comprising:
a backside layer adjacent to the second layer; and
wherein the contact wiring connects with the second layer drain region, and wherein the second layer drain region lacks any backside contact.
10. A stacked field effect transistor (stacked-FET) device comprising:
a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals;
a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals;
a diffusion break dielectric fill region adjacent to one of the second layer terminals; and
a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the second layer and passing through one of the first layer terminals.
11. The stacked-FET device of claim 10 , wherein the plurality of first layer terminals of the at least one first layer transistor structure comprise a first layer gate separating a first layer source region and a first layer drain region.
12. The stacked-FET device of claim 11 , wherein the plurality of second layer terminals of the at least one second layer transistor structure comprise a second layer gate separating a second layer source region and a second layer drain region.
13. The stacked-FET device of claim 12 , further comprising:
a middle-of-line layer adjacent to the first layer source region and the first layer drain region; and
wherein the contact wiring connects with the middle-of-line layer.
14. The stacked-FET device of claim 12 , further comprising:
a buried oxide layer overlying and adjacent to the second layer;
a backside layer adjacent to the second layer; and
wherein the contact wiring passes through the buried oxide layer to connect with the backside layer.
15. The stacked-FET device of claim 12 , further comprising:
an additional second layer drain region; and
wherein the diffusion break dielectric fill region is adjacent to the second layer source region and is adjacent to the additional second layer drain region.
16. The stacked-FET device of claim 12 , further comprising:
an interlayer dielectric layer disposed between the first layer and the second layer; and
wherein the contact wiring comprises a local interconnect structure passing through the interlayer dielectric layer.
17. The stacked-FET device of claim 12 , wherein the contact wiring passes through the first layer source region.
18. The stacked-FET device of claim 12 , wherein the contact wiring passes through the first layer drain region.
19. A stacked field effect transistor (stacked-FET) device comprising:
a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals;
a diffusion break dielectric fill region adjacent to one of the first layer terminals;
a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals;
a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the first layer and connecting with one of the second layer terminals; and
an additional first layer drain region;
wherein the diffusion break dielectric fill region is adjacent to the first layer source region and is adjacent to the additional first layer drain region.
20. The stacked-FET device of claim 19 , further comprising:
a backside layer adjacent to the second layer; and
wherein the contact wiring connects with the second layer gate, and wherein each of the second layer source region and the second layer drain region comprises a backside contact.