Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices

1. An n-type carbon nanotube thin film transistors, comprising:

an electronically pure semiconducting carbon nanotube thin film comprising a population of single-walled semiconducting carbon nanotubes essentially free of metallic impurities and organic material, and wherein the film is characterized as being electronically pure when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 5 V across the semiconducting carbon nanotube network diode;

drain/source metal electrodes in electrical contact with the carbon nanotube thin film;

an amorphous silicon nitride dielectrics layer; and

a metal gate electrode,

characterized in that the N-type carbon nanotube thin film transistor shows amorphous silicon-like transfer characteristics in which the current increases from <10 −12 A to at least 10 −7 A when the gate voltage sweeps from 0 V to 20V under 0.1 V drain-source bias.

2. The n-type carbon nanotube thin film transistors of claim 1 , characterized in that under V DS =0.1 V, the I DS increases from 1 fA at −5V to 0.1 μA at 30 V.

3. The n-type carbon nanotube thin film transistors of claim 1 , characterized in that under V DS =10 V, I DS >30 μA at 30 V.

4. The n-type carbon nanotube thin film transistors of claim 1 , wherein the thin film transistor demonstrates negligible threshold shift after 10 V stress for one hour.

5. The n-type carbon nanotube thin film transistors of claim 1 , characterized in that under V DS =0.1 V, the I ON /I OFF ratio is >10 8 .

6. The n-type carbon nanotube thin film transistors of claim 1 , characterized in that under V DS =0.1 V, the I ON /I OFF ratio is in the range of 10 6 -10 12 .

7. The n-type carbon nanotube thin film transistors of claim 1 , wherein the gate electrode is a top gate electrode.

8. The n-type carbon nanotube thin film transistors of claim 1 , wherein the gate electrode is a bottom gate electrode.

9. The n-type carbon nanotube thin film transistors of claim 1 , wherein the transistor is prepared using an etch-stop.

10. The n-type carbon nanotube thin film transistors of claim 1 , wherein the transistor is prepared using a back channel etch process.

11. The n-type carbon nanotube thin film transistors of claim 1 , wherein the carbon nanotube density is in a range from 1-1000 nanotubes per μm 2 .

12. The n-type carbon nanotube thin film transistors of claim 1 , wherein the thin film transistor is air stable.

13. The n-type carbon nanotube thin film transistors of claim 1 , wherein the n-type carbon nanotube thin film transistors have channel lengths ranging from 5 nm to 1 mm or higher.

14. The n-type carbon nanotube thin film transistors of claim 1 , wherein the n-type carbon nanotube thin film transistors have channel widths ranging from 5 nm to 1 mm.

15. The n-type carbon nanotube thin film transistors of claim 1 , wherein the electronically pure semiconducting carbon nanotube are single-walled carbon nanotubes.

16. The n-type carbon nanotube thin film transistors of claim 1 , wherein the carbon nanotubes comprise one or more chiralities selected from (6,1), (5,3), (7,0), (6,2), (5,4), (8,0), (7,2), (8,1), (6,4), (7,3), (6,5), (9,1), (8,3), (10,0), (9,2), (7,5), (8,4), (11,0), (12, 2), (7,6), (9,4), (11,1), (10,3), (8,6), (9,5), (12,1), (11,3), (8,7), (13,0), (12,2), (10,5), (11,4), (9,7), (10,6), (13,2), (12,4), (14,1), (9,8), (13,3), (18,4), (20,2).

17. The n-type carbon nanotube thin film transistors of claim 1 , wherein the semiconducting carbon nanotubes are a single chirality.

18. The n-type carbon nanotube thin film transistors of claim 1 , wherein the carbon nanotubes are (6,5) single-walled carbon nanotube.

19. The n-type carbon nanotube thin film transistors of claim 1 , wherein the semiconducting carbon nanotubes are a single tube dimension.

20. A p-type carbon nanotube thin film transistors, comprising:

an electronically pure semiconducting carbon nanotube thin film comprising a population of single-walled semiconducting carbon nanotubes essentially free of metallic impurities and organic material, and wherein the film is characterized as being electronically pure when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 5 V across the semiconducting carbon nanotube network diode;

drain/source metal electrodes in electrical contact with the carbon nanotube thin film;

a hafnium oxide dielectrics layer;

a metal gate electrode,

characterized in that the p-type carbon nanotube thin film transistors show p-type transfer characteristics, in which under V DS =1 V, the I DS increases from <10 −12 A to at least 10 −7 A when the gate voltage sweeps from 0 V to −20V under 1 V drain-source bias.

21. The p-type carbon nanotube thin film transistors of claim 20 , characterized in that the p-type carbon nanotube thin film transistors show p-type transfer characteristics, in which under V DS =1 V, the I DS increases less than 1 fA at 5V to 0.1 μA at −15 V.

22. The p-type carbon nanotube thin film transistors of claim 20 , wherein the carbon nanotube density is in a range from 1-1000 nanotubes per μm 2 .

23. The p-type carbon nanotube thin film transistors of claim 20 , characterized in that under V DS =1 V, the I ON /I OFF ratio is >10 8 .

24. The p-type carbon nanotube thin film transistors of claim 20 , characterized in that under V DS =1 V, the I ON /I OFF ratio is in the range of 10 6 -10 12 .

25. The p-type carbon nanotube thin film transistors of claim 20 , wherein the thin film transistor is air stable.

26. The p-type carbon nanotube thin film transistors of claim 20 , wherein the p-type carbon nanotube thin film transistors have channel lengths ranging from 35 nm to 1 mm or higher.

27. The p-type carbon nanotube thin film transistors of claim 20 , wherein the p-type carbon nanotube thin film transistors have channel widths ranging from 5 nm to 1 mm.

28. The p-type carbon nanotube thin film transistors of claim 20 , wherein the carbon nanotubes comprise one or more chiralities selected from (6,1), (5,3), (7,0), (6,2), (5,4), (8,0), (7,2), (8,1), (6,4), (7,3), (6,5), (9,1), (8,3), (10,0), (9,2), (7,5), (8,4), (11,0), (12, 2), (7,6), (9,4), (11,1), (10,3), (8,6), (9,5), (12,1), (11,3), (8,7), (13,0), (12,2), (10,5), (11,4), (9,7), (10,6), (13,2), (12,4), (14,1), (9,8), (13,3), (18,4), (20,2).

29. The p-type carbon nanotube thin film transistors of claim 20 , wherein the semiconducting carbon nanotubes are a single chirality.

30. The p-type carbon nanotube thin film transistors of claim 20 , wherein the carbon nanotubes are (6,5) single-walled carbon nanotube.

31. The p-type carbon nanotube thin film transistors of claim 20 , wherein the semiconducting carbon nanotubes are a single tube dimension.

32. The p-type carbon nanotube thin film transistors of claim 20 , wherein the gate electrode is a top gate electrode.

33. The p-type carbon nanotube thin film transistors of claim 20 , wherein the gate electrode is a bottom gate electrode.

34. The p-type carbon nanotube thin film transistors of claim 20 , wherein the transistor is prepared using an etch-stop.

35. The p-type carbon nanotube thin film transistors of claim 20 , wherein the transistor is prepared using a back channel etch process.