IP Library › Granted Patent US 11,092,633
Granted Patent B2
US 11,092,633 · App. 16/275,834 · Granted Aug 17, 2021

Capacitance detection circuit, semiconductor device, input device and electronic apparatus including the same, and method of detecting capacitance

Inventor: Yuji Shimada (Kyoto, JP)
Assignee: ROHM CO., LTD.
G01R27/2605G06F3/044G06F3/0416G06F3/04166H03F3/45475G06F3/04182H03F3/265H03F2200/129H03F2203/45116H03F2203/45512H03F2203/45528
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Quick Facts
Patent No.
US 11,092,633
App. No.
16/275,834
Granted
Aug 17, 2021
Kind
B2
Abstract

A capacitance detection circuit for measuring an electrostatic capacitance, includes: a control signal generator configured to generate a control signal; a drive circuit having a push-pull type output stage and configured to apply a drive voltage to the electrostatic capacitance according to the control signal; a current detection circuit configured to generate a detection current which is a replica of a current flowing through the output stage of the drive circuit; and an integrating circuit configured to integrate the detection current to generate a detection voltage.

Claims (58)

1. A capacitance detection circuit for measuring an electrostatic capacitance, comprising:

a control signal generator configured to generate a control signal;

a drive circuit including:

a push-pull type output stage, which is configured to apply a drive voltage to the electrostatic capacitance according to the control signal, and including a low-side transistor and a high-side transistor; and

a differential input stage whose output terminals are connected to a control terminal of the low-side transistor and a control terminal of the high-side transistor, respectively, to apply output voltages to the control terminal of the high-side transistor and the control terminal of the low-side transistor, respectively, so that a feedback signal corresponding to an output voltage of the drive circuit matches the control signal;

a current detection circuit configured to generate a detection current which is a replica of a current flowing through the output stage of the drive circuit, and including:

a first transistor having a control terminal connected in common with the control terminal of the high-side transistor; and

a second transistor having a control terminal connected in common with the control terminal of the low-side transistor; and

an integrating circuit configured to integrate the detection current to generate a detection voltage,

wherein the detection current depends on a difference between a current flowing through the first transistor and a current flowing through the second transistor.

2. The capacitance detection circuit of claim 1 , wherein the control signal is a pulse signal, and

wherein the drive circuit includes an amplifier configured to receive the pulse signal.

3. The capacitance detection circuit of claim 1 , wherein the electrostatic capacitance is obtained by calculating a difference between the detection voltage obtained during charging and the detection voltage obtained during discharging.

4. The capacitance detection circuit of claim 1 , wherein the integrating circuit integrates the detection current obtained during charging and the detection current obtained during discharging.

5. The capacitance detection circuit of claim 1 , further comprising: an offset capacitor having one end connected to an input of the integrating circuit, and the other end to which a correction signal corresponding to the control signal is applied.

6. The capacitance detection circuit of claim 1 , wherein the capacitance detection circuit is integrated on a single semiconductor integrated circuit.

7. The capacitance detection circuit of claim 1 , wherein the differential input stage includes:

a non-inverting input terminal to which the control signal, which is a pulse signal, generated by the control signal generator is input; and

an inverting input terminal to which the drive voltage is input.

8. A semiconductor device for measuring a plurality of electrostatic capacitances, comprising:

a plurality of sense terminals to which the plurality of electrostatic capacitances are connected; and

a plurality of capacitance detection circuits corresponding to the plurality of sense terminals,

wherein each of the plurality of capacitance detection circuits includes:

a control signal generator configured to generate a control signal;

a drive circuit including:

a push-pull type output stage, which is configured to apply a drive voltage to the electrostatic capacitances according to the control signal, and including a low-side transistor and a high-side transistor; and

a differential input stage whose output terminals are connected to a control terminal of the low-side transistor and a control terminal of the high-side transistor, respectively, to apply output voltages to the control terminal of the high-side transistor and the control terminal of the low-side transistor, respectively, so that a feedback signal corresponding to an output voltage of the drive circuit matches the control signal;

a current detection circuit configured to generate a detection current which is a replica of a current flowing through the output stage of the drive circuit, and including:

a first transistor having a control terminal connected in common with the control terminal of the high-side transistor; and

a second transistor having a control terminal connected in common with the control terminal of the low-side transistor; and

an integrating circuit configured to integrate the detection current to generate a detection voltage,

wherein the detection current depends on a difference between a current flowing through the first transistor and a current flowing through the second transistor.

9. The semiconductor device of claim 8 , further comprising: a current averaging circuit configured to generate an average current of a plurality of detection currents obtained by the plurality of capacitance detection circuits,

wherein the integrating circuit of each of the capacitance detection circuits integrates a difference between the corresponding detection current and the average current.

10. An input device comprising:

a touch panel including a plurality of sensor electrodes such that the electrostatic capacitances of a portion of the plurality of sensor electrodes in a vicinity of a coordinate touched by a user changes; and

the semiconductor device of claim 8 that is configured to measure the electrostatic capacitances of the plurality of sensor electrodes.

11. An electronic apparatus comprising: the input device of claim 10 .

12. The semiconductor device of claim 8 , wherein the differential input stage includes:

a non-inverting input terminal to which the control signal, which is a pulse signal, generated by the control signal generator is input; and

an inverting input terminal to which the drive voltage is input.

13. A method of detecting an electrostatic capacitance, comprising:

generating a control signal;

charging and discharging the electrostatic capacitance according to the control signal by using a drive circuit including:

a push-pull type output stage, which is configured to apply a drive voltage to the electrostatic capacitance according to the control signal, and including a low-side transistor and a high-side transistor; and

a differential input stage whose output terminals are connected to a control terminal of the low-side transistor and a control terminal of the high-side transistor, respectively, to apply output voltages to the control terminal of the high-side transistor and the control terminal of the low-side transistor, respectively, so that a feedback signal corresponding to an output voltage of the drive circuit matches the control signal;

generating a detection current which is a replica of a current of the output stage by using a current detection circuit including:

a first transistor having a control terminal connected in common with the control terminal of the high-side transistor; and

a second transistor having a control terminal connected in common with the control terminal of the low-side transistor; and

generating a detection voltage by integrating the detection current,

wherein the detection current depends on a difference between a current flowing through the first transistor and a current flowing through the second transistor.

14. The method of claim 13 , wherein the control signal is a pulse signal, and

wherein the drive circuit includes an amplifier configured to receive the pulse signal.

15. The method of claim 13 , further comprising: calculating a difference between the detection voltage obtained during charging and the detection voltage obtained during discharging.

16. The method of claim 13 , wherein the detection voltage is generated by integrating the detection current obtained during charging and the detection current obtained during discharging.

17. The method of claim 13 , wherein the differential input stage includes:

a non-inverting input terminal to which the control signal, which is a pulse signal, generated by a control signal generator is input; and

an inverting input terminal to which the drive voltage is input.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2019
From: SHIMADA, YUJI
To: ROHM CO., LTD.
Reel/Frame 048335/0715 →
Priority Claims (1)
JP JP2018-025705 · Feb 16, 2018 · national
Continuity (1)
Related Publication 20190257870A1 · Aug 22, 2019
Cited By (2)
US 12,352,794 US 12,584,955