Bonded body, insulated circuit board with heat sink, and heat sink
An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a γ 2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.
1. A bonded body having an aluminum alloy member made of an aluminum alloy and a copper member made of copper or a copper alloy that are bonded to each other,
wherein the aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and the copper member are bonded to each other through solid-phase diffusion,
a compound layer provided by diffusion of metal atoms in the aluminum alloy member and Cu atoms in the copper member is provided in a bonding interface between the aluminum alloy member and the copper member, and
the compound layer is made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a γ 2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer.
2. The bonded body according to claim 1 ,
wherein a magnesium oxide film is provided on a bonding surface of the aluminum alloy member.
3. The bonded body according to claim 2 ,
wherein the magnesium oxide film has a crystalline granular body.
4. An insulated circuit board with a heat sink comprising: an insulating layer; a circuit layer provided on one surface of the insulating layer; a metal layer provided on an other surface of the insulating layer; and a heat sink disposed on a surface of the metal layer opposite to the insulating layer,
wherein a bonding surface with the heat sink of the metal layer is made of copper or a copper alloy,
a bonding surface with the metal layer of the heat sink is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %,
the heat sink and the metal layer are bonded to each other through solid-phase diffusion,
a compound layer provided by diffusion of metal atoms in the aluminum alloy and Cu atoms in the copper member is provided in a bonding interface between the heat sink and the metal layer, and
this compound layer is made up of a first intermetallic compound layer that is disposed on the heat sink side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the metal layer side and made of a γ 2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer.
5. The insulated circuit board with a heat sink according to claim 4 ,
wherein a magnesium oxide film is provided on a bonding surface of the heat sink.
6. The insulated circuit board with a heat sink according to claim 5 ,
wherein the magnesium oxide film has a crystalline granular body.
7. A heat sink comprising: a heat sink main body; and a copper member layer that is bonded to the heat sink main body and made of copper or a copper alloy,
wherein the heat sink main body is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %,
the heat sink main body and the copper member layer are bonded to each other through solid-phase diffusion,
a compound layer provided by diffusion of metal atoms in the heat sink main body and Cu atoms in the copper member layer is provided in a bonding interface between the heat sink main body and the copper member layer, and
this compound layer is made up of a first intermetallic compound layer that is disposed on the heat sink main body side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member layer side and made of a γ 2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer.
8. The heat sink according to claim 7 ,
wherein a magnesium oxide film is provided on a bonding surface of the heat sink main body.
9. The heat sink according to claim 8 ,
wherein the magnesium oxide film has a crystalline granular body.