Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Inventors: Dimitrios Pavlopoulos (Boise, ID); Kunal Shrotri (Boise, ID); Anish A. Khandekar (Boise, ID)

H01L27/11568 H01L27/1157 H01L27/11519 H01L27/11521 H01L27/11556 H01L27/11565 H01L27/11582 H01L29/04 H01L29/045 H01L29/66825 H01L29/66833 H01L29/788 H01L29/792

View Patent ↗

Loading inventors, assignments & file history…

Monitor This Case

Get email alerts when status or documents change.

Order Certified Copies

Most orders are placed with the USPTO same day — all within 24 business hours.

Order via The Patent Place →

Pre-filled with this patent's details

Quick Facts

Patent No.: US 11,094,705
App. No.: 16/518,498
Granted: Aug 17, 2021
Kind: B2

External Links

USPTO Patent Center↗ Full Patent PDF↗

Abstract

A method of forming polysilicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent. A second polysilicon-comprising material is formed over the first polysilicon-comprising material. The second polysilicon-comprising material comprises less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material. Other aspects and embodiments, including structure independent of method of manufacture, are disclosed.

Claims (24)

1. A method of forming polysilicon, comprising:

forming a first polysilicon-comprising material over a substrate, the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent;

forming a second polysilicon-comprising material over the first polysilicon-comprising material, the second polysilicon-comprising material comprising total elemental carbon and elemental nitrogen that is from zero to less than the total of the elemental carbon and elemental nitrogen that is in the first polysilicon-comprising material, the first polysilicon-comprising material being formed to be thicker than the second polysilicon-comprising material; and

forming the first polysilicon-comprising material and the second polysilicon-comprising material to have at least 30 percent 111 crystal orientation as measured by electron backscatter diffraction.

2. The method of claim 1 comprising forming the first polysilicon-comprising material and the second polysilicon-comprising material to have at least 50 percent 111 crystal orientation as measured by EBSD.

3. The method of claim 1 wherein the first polysilicon-comprising material comprises both elemental carbon and elemental nitrogen.

4. The method of claim 3 wherein the total of the elemental carbon and elemental nitrogen in the first polysilicon-comprising material is 0.5 to 2 atomic percent.

5. The method of claim 1 wherein the second polysilicon-comprising material is formed directly against the first polysilicon-comprising material.

6. The method of claim 1 wherein the total of the elemental carbon and elemental nitrogen in the second polysilicon-comprising material is zero to 0.001 atomic percent.

7. The method of claim 1 wherein the total of the elemental carbon and elemental nitrogen in the first polysilicon-comprising material is 0.5 to 2 atomic percent.

8. The method of claim 7 wherein the total of the elemental carbon and elemental nitrogen in the second polysilicon-comprising material is zero to 0.001 atomic percent.

9. The method of claim 1 wherein the first polysilicon-comprising material comprises only one of elemental carbon and elemental nitrogen.

10. The method of claim 9 wherein the first polysilicon-comprising material comprises elemental carbon.

11. The method of claim 9 wherein the first polysilicon-comprising material comprises elemental nitrogen.

12. A method used in forming an array of electronic components, comprising:

forming vertically-alternating tiers of different composition materials;

forming elevationally-extending openings into the vertically-alternating tiers;

forming polysilicon-comprising material in the openings, the forming of the polysilicon-comprising material comprising:

forming a first polysilicon-comprising material in the openings, the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent; and

forming a second polysilicon-comprising material in the openings over the first polysilicon-comprising material, the second polysilicon-comprising material comprising total elemental carbon and elemental nitrogen that is from zero to less than the total of the at least one of elemental carbon and elemental nitrogen that is in the first polysilicon-comprising material, the first polysilicon-comprising material being formed to be thicker than the second polysilicon-comprising material; and

forming the first polysilicon-comprising material and the second polysilicon-comprising material to have at least 30 percent 111 crystal orientation as measured by electron backscatter diffraction.

13. The method of claim 12 comprising forming the first polysilicon-comprising material and the second polysilicon-comprising material to have at least 50 percent 111 crystal orientation as measured by EBSD.

14. The method of claim 12 wherein the first polysilicon-comprising material comprises both elemental carbon and elemental nitrogen.

15. The method of claim 14 wherein the total of the elemental carbon and elemental nitrogen in the first polysilicon-comprising material is 0.5 to 2 atomic percent.

Continuity (3)

Division 16002075 · Jun 17, 2018

Division 15295577 · Oct 17, 2016

Related Publication 20190341398A1 · Nov 7, 2019