Memory device
A memory device includes a channel element, a memory element, and an electrode element. The channel element includes a first channel portion, a second channel portion, and a middle channel portion between the first channel portion and the second channel portion. The first channel portion has a first sidewall channel surface and a second sidewall channel surface opposing to the first sidewall channel surface. The middle channel portion has a third sidewall channel surface and a fourth sidewall channel surface opposing to the third sidewall channel surface. The first sidewall channel surface and the second sidewall channel surface of the first channel portion are outside the third sidewall channel surface and the fourth sidewall channel surface of the middle channel portion respectively. A memory cell is defined in the memory element between the channel element and the electrode element.
1. A memory device, comprising:
a channel element comprising a first channel portion, a second channel portion, and a middle channel portion between the first channel portion and the second channel portion, wherein the first channel portion has a first sidewall channel surface and a second sidewall channel surface opposing to the first sidewall channel surface, the middle channel portion has a third sidewall channel surface and a fourth sidewall channel surface opposing to the third sidewall channel surface, the first sidewall channel surface and the second sidewall channel surface of the first channel portion are outside the third sidewall channel surface and the fourth sidewall channel surface of the middle channel portion respectively;
a memory element;
an electrode element, wherein a memory cell is defined in the memory element between the channel element and the electrode element;
a first pillar element functioning as one of a source and a drain, wherein the first channel portion of the channel element surrounds at least a part of a sidewall surface of the first pillar element and the first pillar element extends along an entire depth of the first channel portion; and
a second pillar element functioning as the other of the source and the drain, wherein the second channel portion of the channel element surrounds at least a part of a sidewall surface of the second pillar element.
2. The memory device according to claim 1 , wherein the middle channel portion comprises a first middle channel portion and a second middle channel portion separated from the first middle channel portion, the first middle channel portion and the second middle channel portion are between the first channel portion and the second channel portion.
3. The memory device according to claim 2 , further comprising an insulating element, wherein the first middle channel portion and the second middle channel portion are separated from each other by the insulating element.
4. The memory device according to claim 1 , wherein the first pillar element and the second pillar element comprise a channel material or an electrode material.
5. The memory device according to claim 1 , wherein the first sidewall channel surface and the third sidewall channel surface are on the same one side of the channel element, the second sidewall channel surface and the fourth sidewall channel surface are on the same another side of the channel element.
6. The memory device according to claim 1 , wherein the second channel portion has a fifth sidewall channel surface and a sixth sidewall channel surface opposing to the fifth sidewall channel surface, the fifth sidewall channel surface and the sixth sidewall channel surface of the second channel portion are outside the third sidewall channel surface and the fourth sidewall channel surface of the middle channel portion respectively.
7. The memory device according to claim 6 , wherein the first sidewall channel surface, the third sidewall channel surface and the fifth sidewall channel surface are on the same one side of the channel element, the second sidewall channel surface, the fourth sidewall channel surface and the sixth sidewall channel surface are on the same another side of the channel element.
8. The memory device according to claim 1 , wherein the first channel portion has a sidewall surface having an open ring shape, the third sidewall channel surface and the fourth sidewall channel surface of the middle channel portion have a plane shape.
9. The memory device according to claim 8 , wherein the second channel portion has a sidewall surface having an open ring shape.
10. The memory device according to claim 1 , wherein the first channel portion is electrically connected to one of a source electrode and a drain electrode, the second channel portion is electrically connected to the other of the source electrode and the drain electrode.
11. The memory device according to claim 1 , wherein the channel element has a dumbbell shape arrangement.
12. The memory device according to claim 1 , comprising a plurality of the electrode elements disposed on a sidewall surface of the memory element along a vertical direction and separated from each other, wherein a plurality of the memory cells is defined in the memory element between the channel element and the plurality of the electrode elements.
13. A memory device, comprising:
a channel element comprising a first channel portion, a second channel portion, and a middle channel portion between the first channel portion and the second channel portion;
a memory element comprising a first memory portion, a second memory portion, and a middle memory portion between the first memory portion and the second memory portion, wherein the first memory portion has a first outer sidewall memory surface and a second outer sidewall memory surface opposing to the first outer sidewall memory surface, the middle memory portion has a third outer sidewall memory surface and a fourth outer sidewall memory surface opposing to the third outer sidewall memory surface, the first outer sidewall memory surface and the second outer sidewall memory surface of the first memory portion are outside the third outer sidewall memory surface and the fourth outer sidewall memory surface of the middle memory portion respectively;
an electrode element, wherein a memory cell is defined in the memory element between the channel element and the electrode element;
a first pillar element functioning as one of a source and a drain, wherein the first channel portion of the channel element surrounds at least a part of a sidewall surface of the first pillar element and the first pillar elements extends along an entire depth of the first channel portion; and
a second pillar element functioning as the other of the source and the drain, wherein the second channel portion of the channel element surrounds at least a part of a sidewall surface of the second pillar element.
14. The memory device according to claim 13 , wherein the first outer sidewall memory surface and the third outer sidewall memory surface are on the same one side of the memory element, the second outer sidewall memory surface and the fourth outer sidewall memory surface are on the same another side of the memory element.
15. The memory device according to claim 13 , wherein the second memory portion has a fifth outer sidewall memory surface and a sixth outer sidewall memory surface opposing to the fifth outer sidewall memory surface, the fifth outer sidewall memory surface and the sixth outer sidewall memory surface of the second memory portion are outside the third outer sidewall memory surface and the fourth outer sidewall memory surface of the middle memory portion respectively.
16. The memory device according to claim 13 , wherein the first memory portion and the second memory portion have open ring shapes opposing to each other, the middle memory portion has a straight strip shape.
17. The memory device according to claim 13 , wherein an external of the memory element has a dumbbell shape.
18. A memory device, comprising: an insulating element having a straight strip shape;
a channel element surrounding a sidewall surface of the insulating element, wherein the channel element comprises a first channel portion, a second channel portion, and a middle channel portion between the first channel portion and the second channel portion:
a memory element;
an electrode element, wherein a memory cell is defined in the memory element between the channel element and the electrode element;
a first pillar element functioning as one of a source and a drain, wherein the first channel portion of the channel element surrounds at least a part of a sidewall surface of the first pillar element and the first pillar element extends along an entire depth of the first pillar element; and
a second pillar element functioning as the other of the source and the drain, wherein the second channel portion of the channel element surrounds at least a part of a sidewall surface of the second pillar element.
19. The memory device according to claim 18 , wherein the insulating element and the channel element as a whole have a dumbbell shape profile.