Semiconductor device and forming method thereof
View Patent ↗A device includes a substrate, a first zirconium-containing oxide layer, a first metal oxide layer and a top electrode. The first zirconium-containing oxide layer is over a substrate and having ferroelectricity or antiferroelectricity. The first metal oxide layer is in contact with the first zirconium-containing oxide layer. The first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer. The top electrode is over the first zirconium-containing oxide layer.
1. A device, comprising:
a substrate;
a first zirconium-containing oxide layer over the substrate and having ferroelectricity or antiferroelectricity;
a titanium oxide layer in directly contact with a top surface of the first zirconium-containing oxide layer, the titanium oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer;
a top electrode over the titanium oxide layer;
a first metal oxide layer between the titanium oxide layer and the top electrode; and
a middle electrode between the titanium oxide layer and the first metal oxide layer.
2. The device of claim 1 , further comprising a second metal oxide layer between the first zirconium-containing oxide layer and the substrate.
3. The device of claim 2 , wherein the first metal oxide layer has a thickness less than the thickness of the titanium oxide layer.
4. The device of claim 2 , wherein the first metal oxide layer is made of titanium oxide.
5. The device of claim 1 , further comprising:
a second zirconium-containing oxide layer over the first zirconium-containing oxide layer, wherein the first metal oxide layer is in contact with the second zirconium-containing oxide layer.
6. The device of claim 5 , wherein the first metal oxide layer has a thickness less than a thickness of the second zirconium-containing oxide layer.
7. The device of claim 5 , further comprising a second metal oxide layer, wherein the second zirconium-containing oxide layer is between the first metal oxide layer and the second metal oxide layer.
8. The device of claim 7 , wherein the second metal oxide layer has a thickness less than the thickness of the second zirconium-containing oxide layer.
9. The device of claim 7 , wherein the first metal oxide layer and the second metal oxide layer are made of the same material.
10. The device of claim 5 , wherein the first zirconium-containing oxide layer has ferroelectricity, and the second zirconium-containing oxide layer has antiferroelectricity.
11. The device of claim 5 , wherein the first zirconium-containing oxide layer has antiferroelectricity, and the second zirconium-containing oxide layer has ferroelectricity.
12. A device, comprising:
a semiconductor substrate having source/drain regions and a channel region between the source/drain regions;
a first zirconium-containing oxide layer over the channel region of the semiconductor substrate and having ferroelectricity or antiferroelectricity;
a first metal oxide layer in contact with the first zirconium-containing oxide layer, wherein the first metal oxide layer is electrically insulating;
a top electrode over the first zirconium-containing oxide layer;
a second zirconium-containing oxide layer between the first zirconium-containing oxide layer and the top electrode;
a second metal oxide layer in contact with the second zirconium-containing oxide layer and made of a material different than the first metal oxide layer; and
a middle electrode between the first zirconium-containing oxide layer and the second zirconium-containing oxide layer.
13. The device of claim 12 , wherein the first metal oxide layer is over the first zirconium-containing oxide layer.
14. The device of claim 12 , wherein the second zirconium-containing oxide layer has ferroelectricity or antiferroelectricity.
15. The device of claim 14 , wherein the second zirconium-containing oxide layer is between the first metal oxide layer and the top electrode.
16. The device of claim 14 , further comprising:
a second metal oxide layer in contact with the second zirconium-containing oxide layer.
17. The device of claim 16 , wherein the second metal oxide layer is between the first metal oxide layer and the second zirconium-containing oxide layer.
18. The device of claim 16 , wherein the second metal oxide layer is between the top electrode and the second zirconium-containing oxide layer.
19. A device, comprising:
a substrate;
a gate dielectric layer over the substrate;
a bottom electrode over the gate dielectric layer;
a titanium oxide layer over the bottom electrode;
a zirconium-containing layer over the titanium oxide layer;
a hafnium oxide layer over the zirconium-containing layer;
a top electrode over the hafnium oxide layer;
a zirconium-free metal oxide layer between the hafnium oxide layer and the top electrode; and
a middle electrode in contact with a bottom surface of the upper zirconium-free metal oxide layer and a top surface of the hafnium oxide layer.
20. The device of claim 19 , wherein the bottom electrode includes Pt and the zirconium-containing layer includes zirconium dioxide, and the zirconium-containing layer has an antiferroelectric phase.