Semiconductor device, electronic component, and electronic device
View Patent ↗A novel semiconductor device formed with single-polarity circuits using OS transistors is provided. Thus, connection between different layers in a memory circuit is unnecessary. This can reduce the number of connection portions and improve the flexibility of circuit layout and the reliability of the OS transistors. In particular, many memory cells are provided; thus, the memory cells are formed with single-polarity circuits, whereby the number of connection portions can be significantly reduced. Further, by providing a driver circuit in the same layer as the cell array, many wirings for connecting the driver circuit and the cell array can be prevented from being provided between layers, and the number of connection portions can be further reduced. An interposer provided with a plurality of integrated circuits can function as one electronic component.
1. A semiconductor device comprising:
a cell array comprising a first memory cell and a second memory cell;
a first driver circuit configured to supply a selection signal; and
a second driver circuit configured to write or read out data,
wherein:
the first memory cell comprises a first transistor and a first capacitor electrically connected to each other,
the second memory cell comprises a second transistor and a second capacitor electrically connected to each other,
the first driver circuit comprises a third transistor,
the second driver circuit comprises a fourth transistor,
the first to fourth transistors each include a metal oxide in a channel thereof,
the first to fourth transistors have the same polarity, and
the channels of the first and second transistors are formed in a first semiconductor layer.
2. The semiconductor device according to claim 1 , further comprising:
a control circuit configured to control operations of the first and second driver circuits,
wherein the control circuit comprises a fifth transistor including a metal oxide in a channel thereof, and having the same polarity as the first to fourth transistors.
3. The semiconductor device according to claim 1 , wherein:
the first transistor comprises a first gate electrode and a first insulating layer in contact with a side surface of the first gate electrode,
the second transistor comprises a second gate electrode and a second insulating layer in contact with a side surface of the second gate electrode, and
the first semiconductor layer is electrically connected to a first conductive layer in contact with a side surface of the first or second insulating layer.
4. The semiconductor device according to claim 3 , wherein the first and second transistors each comprise a back gate formed of a second conductive layer.
5. The semiconductor device according to claim 3 , wherein:
the first semiconductor layer comprises a layer containing a metal in a surface thereof, and
the layer is formed in a region not overlapping with the first gate electrode, the second gate electrode, the first insulating layer, and the second insulating layer.
6. The semiconductor device according to claim 5 , wherein the metal is aluminum, ruthenium, titanium, tantalum, tungsten, or chromium.
7. An electronic component comprising:
a package substrate;
an interposer;
an integrated circuit;
the semiconductor device according to claim 1 ; and
a wiring,
wherein:
the integrated circuit, the semiconductor device, and the wiring are over the interposer,
the integrated circuit is electrically connected to the semiconductor device through the wiring, and
at least one of the integrated circuit and the semiconductor device is electrically connected to the package substrate through the interposer.
8. An electronic device comprising:
the electronic component according to claim 7 , and
at least one of a microphone, a speaker, and a camera.