Image sensor with a cross-wafer capacitator
One or more cross-wafer capacitors are formed in an electronic component, circuit, or device that includes stacked wafers. One example of such a device is a stacked image sensor. The image sensor can include two or more wafers, with two wafers that are bonded to each other each including a conductive segment adjacent to, proximate, or abutting a bonding surface of the respective wafer. The conductive segments are positioned relative to each other such that each conductive element forms a plate of a capacitor. A cross-wafer capacitor is formed when the two wafers are attached to each other.
1. An image sensor, comprising:
a first photodetector;
a second photodetector;
a first wafer including a first single conductive segment connected to a first signal line; and
a second wafer attached to the first wafer and comprising:
a second signal line operably coupled to the first photodetector and configured to carry a first charge read out of the first photodetector;
a third signal line operably coupled to the second photodetector and configured to carry a second charge read out of the second photodetector;
a second conductive segment connected to the second signal line and positioned adjacent to the first single conductive segment to produce a first cross-wafer capacitor including the first single conductive segment and the second conductive segment; and
a third conductive segment connected to the third signal line and positioned adjacent to the first single conductive segment to produce a second cross-wafer capacitor including the first single conductive segment and the third conductive segment, wherein:
the image sensor is configured to sum the first charge and the second charge on the first signal line using the first cross-wafer capacitor and the second cross-wafer capacitor wherein:
the first cross-wafer capacitor and the second cross-wafer capacitor share the first single conductive segment.
2. The image sensor of claim 1 , wherein:
the first cross-wafer capacitor is configured to store the first charge transferred from the first photodetector during a first global shutter operation; and
the second cross-wafer capacitor is configured to store the second charge transferred from the second photodetector during a second global shutter operation.
3. The image sensor of claim 1 , wherein:
the second signal line is connected to a first circuit; and
the third signal line is connected to a second circuit different from the first circuit.
4. The image sensor of claim 1 , wherein the first single conductive segment is connected to a node configured to receive a reference signal.
5. A first wafer for an image sensor comprising:
a first signal line operably coupled to a first photodetector and configured to carry a first charge read out of the first photodetector;
a second signal line operably coupled to a second photodetector and configured to carry a second charge read out of the second photodetector;
a first conductive plate connected to the first signal line and positioned proximate to a first area of a bonding surface of the first wafer, and configured to produce a first cross-wafer capacitor with a second single conductive plate of a second wafer attached to the first wafer at the bonding surface; and
a third conductive plate connected to the second signal line and positioned proximate to a second area of the bonding surface of the first wafer, and configured to produce a second cross-wafer capacitor with the second single conductive plate of the second wafer; wherein:
the image sensor is configured to sum the first charge and the second charge on a third signal line connected to the second single conductive plate wherein:
the first cross-wafer capacitor and the second cross-wafer capacitor share the second single conductive plate.
6. The first wafer of claim 5 , wherein:
the first cross-wafer capacitor is configured to store the first charge transferred during a first global shutter operation; and
the second cross-wafer capacitor is configured to store the second charge during a second global shutter operation.
7. The first wafer of claim 5 , wherein:
the first signal line is connected to a first circuit; and
the second signal line is connected to a second circuit different from the first circuit.
8. The first wafer of claim 5 , further comprising:
a fourth conductive plate connected to a third signal line and positioned proximate to a third area of the bonding surface of the first wafer, and configured to produce a third cross-wafer capacitor with the second single conductive plate of the second wafer.
9. The first wafer of claim 5 , wherein the second single conductive plate is connected to a node configured to receive a reference signal.