Superconducting bump bonds
A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.
1. A device comprising:
a first chip comprising a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, wherein the barrier layer is titanium nitride;
a superconducting bump bond consisting of indium on the barrier layer; and
a second chip joined to the first chip by the superconducting bump bond, the second chip comprising a first quantum circuit element, wherein the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.
2. The device of claim 1 , wherein the first interconnect pad is aluminum.
3. The device of claim 1 , wherein the first circuit element comprises a rapid single flux quantum (RSFQ) device.
4. The device of claim 1 , wherein the first circuit element comprises a second quantum circuit element.
5. The device of claim 1 , wherein at least one of the first chip and the second chip comprises a silicon substrate.
6. The device of claim 1 , wherein at least one of the first chip and the second chip comprises a sapphire substrate.
7. The device of claim 1 , wherein a first surface of the first chip is spaced apart from and faces a first surface of the second chip to form a gap.