Electrostatic chuck, substrate processing apparatus, and substrate holding method
An electrostatic chuck includes a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted. The electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck. Further, a substrate processing apparatus includes an electrostatic chuck including a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted; and a controller configured to control a timing of applying a DC voltage to each of the electrodes. Each of the electrodes generates an electrostatic force for attracting and holding the substrate by the DC voltage applied thereto, and the electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck.
1. A substrate processing apparatus comprising:
an electrostatic chuck including a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted;
a controller configured to control a timing of applying a DC voltage to each of the electrodes; and
a measurement system configured to measure a distance between the electrostatic chuck and the substrate mounted on the surface of the electrostatic chuck,
wherein each of the electrodes generates an electrostatic force for attracting and holding the substrate by the DC voltage applied thereto,
the electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck,
the measurement system measures the distance for each of the electrodes,
the controller specifies a warped state of the substrate mounted on the surface of the electrostatic chuck based on the distance, and controls the timing of applying the DC voltage such that the DC voltage is applied to each of the electrodes based on the specified warped state, and
when the warped state of the substrate is specified to a warped state in which the distance increases from a central portion toward an outer periphery of the substrate, the controller controls the timing of applying the DC voltage such that the DC voltage is initially applied to an electrode disposed at the central portion of the substrate among the electrodes, and a process, in which the DC voltage is applied to an electrode with the longest distance among one or more electrodes adjacent to the electrode(s) to which the DC voltage has already been applied, is repeated.
2. The substrate processing apparatus of claim 1 , wherein when the warped state of the substrate is specified to a warped state in which the substrate is not flat and the distance does not increase from the central portion toward the outer periphery of the substrate, the controller controls the timing of applying the DC voltage such that the DC voltage is initially applied to an electrode at which the distance is the longest among the electrodes, and a process, in which the DC voltage is applied to an electrode with the longest distance among one or more electrodes adjacent to the electrode(s) to which the DC voltage has already been applied, is repeated.
3. The substrate processing apparatus of claim 1 , wherein the controller adjusts a value of the DC voltage to be applied to each of the electrodes.
4. A substrate processing apparatus comprising:
an electrostatic chuck including a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted;
a controller configured to control a timing of applying a DC voltage to each of the electrodes; and
a measurement system configured to measure a distance between the electrostatic chuck and the substrate mounted on the surface of the electrostatic chuck,
wherein each of the electrodes generates an electrostatic force for attracting and holding the substrate by the DC voltage applied thereto,
the electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck,
the measurement system measures the distance for each of the electrodes,
the controller specifies a warped state of the substrate mounted on the surface of the electrostatic chuck based on the distance, and controls the timing of applying the DC voltage such that the DC voltage is applied to each of the electrodes based on the specified warped state, and
wherein when the warped state of the substrate is specified to a warped state in which the substrate is not flat and the distance does not increase from a central portion toward an outer periphery of the substrate, the controller controls the timing of applying the DC voltage such that the DC voltage is initially applied to an electrode at which the distance is the longest among the electrodes, and a process, in which the DC voltage is applied to an electrode with the longest distance among one or more electrodes adjacent to the electrode(s) to which the DC voltage has already been applied, is repeated.
5. The substrate processing apparatus of claim 4 , wherein the controller adjusts a value of the DC voltage to be applied to each of the electrodes.