Three-dimensional memory devices having hydrogen blocking layer and fabrication methods thereof

1. A three-dimensional (3D) memory device, comprising:

a substrate;

a memory stack comprising interleaved conductive layers and dielectric layers above the substrate;

an array of NAND memory strings each extending vertically through the memory stack;

a plurality of logic process-compatible devices above the array of NAND memory strings;

a semiconductor layer above and in contact with the logic process-compatible devices;

a pad-out interconnect layer above the semiconductor layer; and

a hydrogen blocking layer vertically between the semiconductor layer and the pad-out interconnect layer, wherein the hydrogen blocking layer is configured to block outgassing of hydrogen, and the semiconductor layer is vertically between the plurality of logic process-compatible devices and the hydrogen blocking layer.

2. The 3D memory device of claim 1 , wherein the hydrogen blocking layer comprises a high dielectric constant (high-k) dielectric material.

3. The 3D memory device of claim 1 , wherein a thickness of the hydrogen blocking layer is between about 1 nm and about 100 nm.

4. The 3D memory device of claim 1 , wherein the hydrogen blocking layer extends laterally to cover the semiconductor layer.

5. The 3D memory device of claim 1 , wherein the hydrogen blocking layer is configured to block outgassing of the hydrogen from the logic process-compatible devices into or beyond the pad-out interconnect layer during fabrication of the 3D memory device.

6. The 3D memory device of claim 1 , further comprising:

a first bonding layer above the array of NAND memory strings and comprising a plurality of first bonding contacts;

a second bonding layer below the logic process-compatible devices and above the first bonding layer and comprising a plurality of second bonding contacts; and

a bonding interface vertically between the first bonding layer and the second bonding layer, wherein the first bonding contacts are in contact with the second bonding contacts at the bonding interface.

7. The 3D memory device of claim 6 , further comprising:

a first interconnect layer vertically between the array of NAND memory strings and the first bonding layer; and

a second interconnect layer vertically between the second bonding layer and the logic process-compatible devices,

wherein the logic process-compatible devices are electrically connected to the array of NAND memory strings through the first and second interconnect layers and the first and second bonding contacts.

8. The 3D memory device of claim 7 , further comprising:

a contact extending vertically through the hydrogen blocking layer and the semiconductor layer to electrically connect the pad-out interconnect layer and the second interconnect layer; and

a hydrogen blocking spacer between the contact and the hydrogen blocking layer.

9. The 3D memory device of claim 1 , further comprising a passivation layer above the pad-out interconnect layer.

10. The 3D memory device of claim 1 , wherein the semiconductor layer comprises single crystalline silicon.

11. A three-dimensional (3D) memory device, comprising:

a substrate;

a first hydrogen blocking layer above the substrate;

a plurality of logic process-compatible devices above the first hydrogen blocking layer;

a semiconductor layer above and in contact with the logic process-compatible devices;

a second hydrogen blocking layer above the semiconductor layer, the semiconductor layer being vertically between the plurality of logic process-compatible devices and the second hydrogen blocking layer; and

a pad-out interconnect layer above the second hydrogen blocking layer,

wherein the first hydrogen blocking layer and the second hydrogen blocking layer are configured to block outgassing of hydrogen from the logic process-compatible devices during fabrication of the 3D memory device.

12. The 3D memory device of claim 11 , wherein each of the first and second hydrogen blocking layers comprises a high dielectric constant (high-k) dielectric material.

13. The 3D memory device of claim 11 , wherein the first and second hydrogen blocking layers extend laterally to encapsulate the logic process-compatible devices in a vertical direction.

14. The 3D memory device of claim 11 , wherein a thickness of each of the first and second hydrogen blocking layers is between about 1 nm and about 100 nm.

15. The 3D memory device of claim 11 , further comprising:

a first bonding layer above the substrate and comprising a plurality of first bonding contacts;

a second bonding layer below the logic process-compatible devices and above the first bonding layer and comprising a plurality of second bonding contacts; and

a bonding interface vertically between the first bonding layer and the second bonding layer, wherein the first bonding contacts are in contact with the second bonding contacts at the bonding interface.

16. The 3D memory device of claim 15 , wherein the first hydrogen blocking layer is vertically between the second bonding layer and the logic process-compatible devices.

17. The 3D memory device of claim 15 , further comprising a contact extending vertically through the second hydrogen blocking layer and the semiconductor layer.

18. The 3D memory device of claim 17 , further comprising a hydrogen blocking spacer between the contact and the second hydrogen blocking layer.

19. The 3D memory device of claim 11 , wherein the semiconductor layer comprises single crystalline silicon.

20. The 3D memory device of claim 11 , further comprising a passivation layer above the pad-out interconnect layer.