Semiconductor devices and methods of manufacturing semiconductor devices

1. A method to manufacture a semiconductor device, comprising:

providing a main substrate having a top side and a bottom side;

providing a first electronic component on the top side of the main substrate;

providing a second electronic component on the bottom side of the main substrate;

providing a carrier having a substrate structure on a top side of the carrier, wherein the substrate structure comprises a dielectric structure and a conductive structure;

attaching the substrate structure to the bottom side of the main substrate adjacent to the second electronic component;

providing an encapsulant structure on the top side of the main substrate and on the bottom side of the main substrate in a single encapsulation operation, wherein the encapsulant structure contacts a lateral side of the dielectric structure of the substrate structure; and

removing the carrier from the bottom side of the main substrate.

2. The method of claim 1 , further comprising cutting through the encapsulant structure and the main substrate after removing the carrier to provide multiple semiconductor devices.

3. The method of claim 1 , further comprising:

cutting through the main substrate prior to attaching the substrate structure to provide multiple modules, wherein the substrate structure is attached to a bottom side of one of the multiple modules, and the encapsulant structure comprises an encapsulant intermediary portion between adjacent ones of the multiple modules, and the encapsulant structure contacts a lateral side of the multiple modules; and

after providing the encapsulant structure, cutting through the encapsulant intermediary portion wherein the encapsulant structure contacts a lateral side of resulting multiple semiconductor devices.

4. The method of claim 3 , wherein a cutting path at the encapsulant intermediary portion is narrower than the encapsulant intermediary portion such that part of the encapsulant intermediary portion remains covering a sidewall of the main substrate.

5. The method of claim 3 , wherein a cutting path at the encapsulant intermediary portion is at least as wide as the encapsulant intermediary portion such that a sidewall of the main substrate is exposed through the encapsulant structure.

6. A method to manufacture a semiconductor device, comprising:

providing a main substrate having a first electronic component on a top side, and a second electronic component on a bottom side;

providing a substrate structure attached to a carrier, wherein the substrate structure comprises a dielectric structure and a conductive structure;

attaching the substrate structure to the bottom side of the main substrate adjacent to the second electronic component;

providing a molding compound on the top side of the main substrate to contact a side of the first electronic component, and between the bottom side of the main substrate and the carrier to contact a side of the second electronic component and a lateral side of the dielectric structure of the substrate structure; and

removing the carrier.

7. The method of claim 6 , wherein the molding compound is provided in a single molding operation.

8. The method of claim 6 , further comprising sawing the main substrate into multiple individual modules prior to said attaching the substrate structure to the bottom side of the main substrate wherein the substrate structure is attached to a bottom side of one of the multiple individual modules, and the molding compound comprises an encapsulant intermediary portion between adjacent ones of the multiple individual modules, and the molding compound contacts a lateral side of the multiple individual modules; and

after providing the molding compound, cutting through the encapsulant intermediary portion wherein the molding compound contacts a lateral side of resulting multiple semiconductor devices.

9. A method to manufacture a semiconductor device, comprising:

providing a main substrate having a top side and a bottom side;

providing a first electronic component on the top side of the main substrate;

providing a second electronic component on the bottom side of the main substrate;

providing a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, wherein the substrate structure comprises a dielectric structure and a conductive structure; and

providing an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a lateral side of the dielectric structure of substrate structure.

10. The method of claim 9 , wherein providing the encapsulant structure comprises providing an encapsulant intermediary portion covering a sidewall of the main substrate.

11. The method of claim 9 , wherein providing the substrate structure comprises:

providing the dielectric structure; and

providing the conductive structure that traverses through the dielectric structure, the conductive structure comprising an internal interconnect coupled to the bottom side of the main substrate and an external interconnect exposed through the encapsulant bottom portion.

12. The method of claim 11 , further comprising providing the conductive structure of the substrate structure that lacks lateral traces and comprises:

a top pad where the internal interconnect is coupled;

a bottom pad where the external interconnect is coupled, and

a vertical via extending from the internal interconnect to the external interconnect.

13. The method of claim 9 , wherein the substrate structure comprises two bar substrates, and the second electronic component is in a cavity between the two bar substrates.

14. The method of claim 9 , wherein the substrate structure comprises four bar substrates, and the second electronic component is in a cavity between the four bar substrates.

15. The method of claim 9 , wherein the substrate structure comprises a cavity substrate comprising the dielectric structure and a cavity in the dielectric structure, and wherein the second electronic component is bounded by the cavity.

16. The method of claim 9 , wherein the encapsulant top portion and the encapsulant bottom portion have a same encapsulant material composition.

17. The method of claim 9 , wherein the encapsulant top portion and the encapsulant bottom portion have a same encapsulant material filler concentration.

18. The method of claim 9 , wherein part of encapsulant bottom portion extends between the main substrate and the substrate structure.

19. The method of claim 9 , wherein the main substrate comprises a redistribution layer (RDL) substrate.