Chemically amplified positive type photoresist composition and pattern forming method using the same

1. A chemically amplified positive type photoresist composition comprising:

(A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution,

(B) an organic solvent,

(C) a first photoacid generator is XA-ZA, and

(D) a second photoacid generator is XA-ZB: wherein,

XA is represented by the following formula:

R XA —I + —R XA    (XA)

wherein,

R XA is an alkylaryl group, and each R XA is identical or different,

ZA is represented by the following formula:

R ZA SO 3 −    (ZA)

wherein,

R ZA is a fluorine-substituted alkyl group, a fluorine-substituted alkyl ether group, a fluorine-substituted aryl group, a fluorine-substituted acyl group, or a fluorine-substituted alkoxyaryl group,

ZB is represented by the following formula:

wherein,

each R ZB is independently a fluorine-substituted alkyl group, a fluorine-substituted alkyl ether group, a fluorine-substituted aryl group, a fluorine-substituted acyl group, or a fluorine-substituted alkoxyaryl group, and two R ZB are unbonded or bonded each other to form a fluorine-substituted heterocyclic structure,

and wherein,

a positive charge of XA is combined with a negative charge of ZA or ZB and

wherein the polymer comprises repeating units selected from the group consisting of the following formulae (P1) to (P4):

wherein,

R PA is a hydrogen atom or an alkyl group,

R PB is an alkyl group or an alkyl ether group, and

R PC is an alkyl group,

and the (A) polymer has a mass average molecular weight of 4,000 to 200,000, the total polymerization ratio of (P3) and (P4) out of all the repeating units in the polymer is 10 to 40 mol %.

2. The composition according to claim 1 , which further contains (E) a basic organic compound or (F) a third photoacid generator.

3. The composition according to claim 1 , which further contains a combination of (E) a basic organic compound and (G) a weak acid.

4. The composition according to claim 1 , wherein, the R XA is an alkylphenyl group.

5. The composition according to claim 1 , wherein,

the R ZA is a perfluoroalkyl group, and

the R ZB is a perfluoroalkyl group or two R ZB is bonded each other by a perfluoroalkylene group.

6. The composition according to claim 1 , which further contains a plasticizer.

7. The composition according to claim 1 , which further contains a phenolic compound or a hydroxycyclo ring-containing compound that reacts with an acid to increase its solubility in an alkaline aqueous solution and has a mass average molecular weight of 3,000 or less.

8. A method for forming a resist pattern comprising:

a step of coating the chemically amplified positive type photoresist composition according to claim 1 on a substrate to form a coating film,

a step of subjecting the coating film to image-wise exposure, and

a step of developing the exposed coating film with an alkaline aqueous solution.

9. The method according to claim 8 , wherein the exposure is performed by deep ultraviolet irradiation.

10. The method according to claim 8 , wherein the thickness of the coating film is 0.9 to 15 μm.

11. A method for manufacturing a semiconductor device, comprising the method according to claim 8 .

12. The composition according to claim 1 , which further contains a surfactant.

13. The composition according to claim 1 , wherein;

R PA is hydrogen or an alkyl group having 1 to 3 carbon atoms;

when R PB is an alkyl group, R PB is an alkyl group having 4 to 12 carbon atoms;

R PC is an alkyl group having 4 to 12 carbon atoms;

alkyl portion of R XA has 4 to 12 carbon atoms;

the number of carbon atoms contained in R ZA is 1 to 10; or

the number of carbon atoms contained in R ZB is 1 to 10.

14. The composition according to claim 1 , wherein;

R PA is hydrogen or methyl;

when R PB is an alkyl group, R PB is a tertiary alkyl group having 4 to 12 carbon atoms;

R PC is an alkyl group having 4 to 12 carbon atoms and has a tertiary carbon or a quaternary carbon;

(XA) is represented by the formula

the number of carbon atoms contained in R ZA is 2 to 6; and

the number of carbon atoms contained in R ZB is 2 to 6.

15. The composition according to any one of claim 1 , wherein;

the (B) organic solvent is 100 to 900 parts by mass based on 100 parts by mass of the (A) polymer;

the (D) second photoacid generator based on the mass of the (C) first photoacid generator is 0.1 to 11 times;

the formulating amount of the (C) first photoacid generator and the (D) second photoacid generator with respect to the composition is 0.5 to 10 parts by mass;

the (E) basic compound is 0 to 2 parts by mass based on 100 parts by mass of the (A) polymer; or

the surfactant is 2 parts by mass or less based on 100 parts by mass of the (A) polymer.

16. The composition according to any one of claim 1 , wherein;

the (B) organic solvent is 100 to 700 parts by mass based on 100 parts by mass of the (A) polymer;

the (D) second photoacid generator based on the mass of the (C) first photoacid generator is 0.3 to 9 times;

the formulating amount of the (C) first photoacid generator and the (D) second photoacid generator with respect to the composition is 1 to 10 parts by mass;

the (E) basic compound is 0.01 to 1 parts by mass based on 100 parts by mass of the (A) polymer; and

the surfactant is 1 parts by mass or less based on 100 parts by mass of the (A) polymer.