Semiconductor device and method for manufacturing semiconductor device
A first transistor, a second transistor, a capacitor, and first to third conductors are included. The first transistor includes a first gate, a source, and a drain. The second transistor includes a second gate, a third gate over the second gate, first and second low-resistance regions, and an oxide sandwiched between the second gate and the third gate. The capacitor includes a first electrode, a second electrode, and an insulator sandwiched therebetween. The first low-resistance region overlaps with the first gate. The first conductor is electrically connected to the first gate and is connected to a bottom surface of the first low-resistance region. The capacitor overlaps with the first low-resistance region. The second conductor is electrically connected to the drain. The third conductor overlaps with the second conductor and is connected to the second conductor and a side surface of the second low-resistance region.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a capacitor;
a first conductor;
a second conductor; and
a third conductor,
wherein the first transistor comprises a first gate, a source, and a drain,
wherein the second transistor comprises a second gate, a third gate over the second gate, and an oxide semiconductor between the second gate and the third gate, the oxide semiconductor comprising a first region and a second region,
wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and an insulator between the first electrode and the second electrode,
wherein the first region overlaps with the first gate,
wherein the first conductor is electrically connected to the first gate,
wherein the first conductor is in contact with a bottom surface of the first region,
wherein the capacitor overlaps with the first region,
wherein the first electrode is electrically connected to the first region,
wherein the second conductor is electrically connected to the drain,
wherein the third conductor overlaps with the second conductor, and
wherein the third conductor is in contact with the second conductor and a side surface of the second region.
2. The semiconductor device according to claim 1 , wherein in a channel length direction of the first transistor, a distance between the second gate and the first gate is half a width of the first gate.
3. The semiconductor device according to claim 2 , wherein in the channel length direction of the first transistor, a distance between the second gate and the second conductor is half the width of the first gate.
4. The semiconductor device according to claim 1 , further comprising a first insulator and a second insulator,
wherein the first insulator covers the first transistor,
wherein the second insulator is in contact with a side surface of the second gate, and
wherein the second insulator has a different composition from the first insulator.
5. The semiconductor device according to claim 1 , further comprising a third insulator and a fourth insulator,
wherein the third insulator covers the second transistor,
wherein the fourth insulator is in contact with a side surface of the third gate, and
wherein the fourth insulator has a different composition from the third insulator.
6. The semiconductor device according to claim 1 , further comprising a source or drain electrode in contact with the first region.
7. The semiconductor device according to claim 6 , wherein the first electrode is in contact with the source or drain electrode.
8. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a third transistor;
a fourth transistor over the third transistor;
a first capacitor;
a second capacitor;
a first conductor;
a second conductor;
a third conductor; and
a fourth conductor,
wherein the first transistor comprises a first gate, a first source, and a first drain,
wherein the second transistor comprises a second gate, a third gate over the second gate, and an oxide semiconductor between the second gate and the third gate, the oxide semiconductor comprising a first region and a second region,
wherein the third transistor comprises a fourth gate, a second source, and a second drain,
wherein the fourth transistor comprises a fifth gate, a sixth gate over the fifth gate, and the oxide semiconductor between the fifth gate and the sixth gate, the oxide semiconductor comprising the second region and a third region,
wherein the first capacitor comprises a first electrode, a second electrode over the first electrode, and a first insulator between the first electrode and the second electrode,
wherein the second capacitor comprises a third electrode, a fourth electrode over the third electrode, and a second insulator between the third electrode and the fourth electrode,
wherein the first region overlaps with the first gate,
wherein the first conductor is electrically connected to the first gate,
wherein the first conductor is in contact with a bottom surface of the first region,
wherein the first capacitor overlaps with the first region,
wherein the first electrode is electrically connected to the first region,
wherein the third region overlaps with the fourth gate,
wherein the fourth conductor is electrically connected to the fourth gate,
wherein the fourth conductor is in contact with a bottom surface of the third region,
wherein the second capacitor overlaps with the third region,
wherein the third electrode is electrically connected to the third region,
wherein the second conductor is electrically connected to the first drain and the second drain,
wherein the third conductor overlaps with the second conductor, and
wherein the third conductor is in contact with the second conductor and a side surface of the second region.
9. The semiconductor device according to claim 8 , wherein the first drain and the second drain are provided in a fourth region.
10. The semiconductor device according to claim 8 ,
wherein in a channel length direction of the first transistor, a distance between the second gate and the first gate is half a width of the first gate.
11. The semiconductor device according to claim 10 ,
wherein in the channel length direction of the first transistor, a distance between the second gate and the second conductor is half the width of the first gate.
12. The semiconductor device according to claim 8 , further comprising a third insulator and a fourth insulator,
wherein the third insulator covers the first transistor,
wherein the fourth insulator is in contact with a side surface of the second gate, and
wherein the fourth insulator has a different composition from the third insulator.
13. The semiconductor device according to claim 8 , further comprising a fifth insulator and a sixth insulator,
wherein the fifth insulator covers the second transistor,
wherein the sixth insulator is in contact with a side surface of the third gate, and
wherein the sixth insulator has a different composition from the fifth insulator.
14. The semiconductor device according to claim 8 , further comprising a first source or drain electrode in contact with the first region.
15. The semiconductor device according to claim 14 , further comprising a second source or drain electrode in contact with the third region.
16. The semiconductor device according to claim 15 , wherein the third electrode is in contact with the second source or drain electrode.