Scanning electron microscope and method for analyzing secondary electron spin polarization
A scanning electron microscope includes a spin detector configured to measure spin polarization of a secondary electron emitted from a sample, and an analysis device configured to analyze measurement data of the spin detector. The analysis device determines a width of a region where the secondary electron spin polarization locally changes in the measurement data. The analysis device further evaluates a strain in the sample based on the width of the region. With a configuration of the scanning electron microscope, it is possible to perform analysis of a strain in a magnetic material with high accuracy.
1. A scanning electron microscope comprising:
a spin detector configured to measure spin polarization of a secondary electron emitted from a sample; and
an analysis device configured to analyze measurement data of the spin detector, wherein
the analysis device is configured to
determine a width of a region where the secondary electron spin polarization locally changes in the measurement data, and
evaluate a strain in the sample based on the width of the region.
2. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to detect a position where the secondary electron spin polarization locally changes in the measurement data.
3. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to determine a width of a region which is specified by a user and where the secondary electron spin polarization locally changes.
4. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
determine a width of a region where the secondary electron spin polarization changes in a plurality of directions in a position where the secondary electron spin polarization locally changes, and
evaluate the strain in the sample based on a minimum value of the width.
5. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
determine the width of the region where the secondary electron spin polarization changes by fitting an approximate function.
6. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
determine a magnitude of the strain in the sample based on a magnitude of the width of the region where the secondary electron spin polarization locally changes, and
determine a strain distribution in the sample based on the magnitude of the strain and display information indicating the strain distribution.
7. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
evaluate the strain in the sample based on the width of the region where the secondary electron spin polarization locally changes and a direction of spin polarization in a region adjacent to the region.
8. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
store a database that associates the width of the region where the secondary electron spin polarization locally changes with a strain amount, and
determine the strain amount by comparing the width of the region where the secondary electron spin polarization locally changes and which is determined in the measurement data and the database.
9. The scanning electron microscope according to claim 1 , wherein
the analysis device is configured to:
specify a plurality of crystal grains in the sample,
evaluate a strain in each of the plurality of crystal grains, and
determine a strain distribution in the sample by connecting an evaluation result of the strain in each of the plurality of crystal grains.
10. A method of analyzing secondary electron spin polarization of a sample measured with a scanning electron microscope by an analysis device, the method comprising:
determining, by the analysis device, a width of a region where the secondary electron spin polarization locally changes in measurement data of the secondary electron spin polarization; and
evaluating, by the analysis device, a strain in the sample based on the width of the region.
11. The method according to claim 10 , further comprising:
specifying, by the analysis device, a position where the secondary electron spin polarization locally changes in the measurement data.
12. The method according to claim 10 , further comprising:
determining, by the analysis device, the width of the region where the secondary electron spin polarization locally changes and which is specified by a user.
13. The method according to claim 10 , further comprising:
determining, by the analysis device, a width of a region where the secondary electron spin polarization changes in a plurality of directions in a position where the secondary electron spin polarization locally changes; and
evaluating, by the analysis device, the strain in the sample based on a minimum value of the width.
14. The method according to claim 10 , further comprising:
determining, by the analysis device, the width of the region where the secondary electron spin polarization changes by fitting an approximate function.
15. The method according to claim 10 , further comprising:
determining, by the analysis device, a magnitude of the strain in the sample based on a magnitude of the width of the region where the secondary electron spin polarization locally changes; and
determining, by the analysis device, a strain distribution in the sample based on the magnitude of the strain, and displaying information indicating the strain distribution.