Semiconductor device

1. A semiconductor device comprising:

a base member;

a multilayer wiring layer formed on the base member;

a first resistive element formed in the multilayer wiring layer; and

a heat dissipation part,

wherein the first resistive element comprises:

a first conductive part;

a second conductive part formed over the first conductive part; and

a third conductive part electrically connecting the first conductive part and the second conductive part with each other,

wherein a length of the third conductive part in a first direction along a surface of the base member is greater than a length of the third conductive part in a second direction along the surface of the base member and perpendicular to the first direction,

wherein a portion of the heat dissipation part is formed in the multilayer wiring layer,

wherein a remaining portion of the heat dissipation part is formed in the base member,

wherein the heat dissipation part comprises:

a first insulating film formed on a bottom surface and a side surface of a recess portion formed on the surface of the base member; and

a first heat conduction part formed on the first insulating film such that the first heat conduction part buries the recess portion, and

wherein the heat dissipation part comprises a second heat conduction part formed in the multilayer wiring layer such that the second heat conduction part is spaced apart from the first resistive element and is connected with the first heat conduction part.

2. The semiconductor device according to claim 1 , wherein the heat dissipation part comprises a first coupling part formed in the multilayer wiring layer such that the first coupling part connects the first resistive element and the first heat conduction part with each other.

3. The semiconductor device according to claim 1 , wherein the second heat conduction part extends along the third conductive part in cross-sectional view.

4. The semiconductor device according to claim 1 ,

wherein one end portion of the second heat conduction part faces a portion of the first resistive element in the second direction along the surface of the base member, and

wherein the one end portion of the second heat conduction part faces another portion of the first resistive element in a direction perpendicular to the surface of the base member.

5. The semiconductor device according to claim 1 ,

wherein one end portion of the second heat conduction part faces the first conductive part and the third conductive part in a direction along the surfaces of the base member, and

wherein the one end portion of the second heat conduction part faces the second conductive part in a direction perpendicular to the surface of the base member.

6. The semiconductor device according to claim 1 ,

wherein the multilayer wiring layer comprises:

a protective layer formed in an uppermost layer of the multilayer wiring layer; and

a thermal stress mitigating part formed between the first resistive element and the protective layer, and

wherein the thermal stress mitigating part overlaps the first resistive element in a plan view.

7. The semiconductor device according to claim 1 , comprising:

a first region in which a first transistor is formed; and

a second region in which a second transistor is formed,

wherein the first resistive element is formed between the first region and the second region in a plan view.

8. The semiconductor device according to claim 1 , comprising a second resistive element formed in the multilayer wiring layer,

wherein the second resistive element comprises:

a fourth conductive part;

a fifth conductive part formed over the fourth conductive part; and

a sixth conductive part electrically connecting the fourth conductive part and the fifth conductive part with each other, and

wherein a length of the sixth conductive part in the first direction is smaller than a length of the sixth conductive part in the second direction.

9. The semiconductor device according to claim 1 , comprising a third resistive element formed in the multilayer wiring layer,

wherein the third resistive element comprises:

a fourth conductive part;

a fifth conductive part formed over the fourth conductive part; and

a sixth conductive part electrically connecting the fourth conductive part and the fifth conductive part with each other,

wherein the fourth conductive part, the fifth conductive part, and the sixth connection part extend in the first direction in plan view, and

wherein the first conductive part is adjacent to the fifth conductive part in plan view.

10. A semiconductor device according to claim 9 , comprising:

a base member;

a multilayer wiring layer formed on the base member;

a first resistive element formed in the multilayer wiring layer; and

a heat dissipation part,

wherein the first resistive element comprises:

a first conductive part;

a second conductive part formed over the first conductive part; and

a third conductive part electrically connecting the first conductive part and the second conductive part with each other,

wherein a length of the third conductive part in a first direction along a surface of the base member is greater than a length of the third conductive part in a second direction along the surface of the base member and perpendicular to the first direction,

wherein a portion of the heat dissipation part is formed in the multilayer wiring layer,

wherein a remaining portion of the heat dissipation part is formed in the base member,

wherein the base member comprises:

a semiconductor substrate; and

a semiconductor layer formed on a surface of the semiconductor substrate,

wherein the heat dissipation part penetrates the semiconductor layer such that the heat dissipation part reaches the semiconductor substrate, and

wherein the semiconductor layer comprises:

a first epitaxial layer having a first conductivity type;

a first buried layer formed on the first epitaxial layer and having a second conductivity type opposite to the first conductivity type; and

a second epitaxial layer formed on the first buried layer and having the first conductivity type.