Method for manufacturing semiconductor devices and structures thereof

1. A method of manufacturing a semiconductor device, comprising:

forming a first mandrel and a second mandrel over a mask layer;

depositing a spacer layer over the first mandrel and the second mandrel;

forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel;

depositing a protection layer over the line-end cut pattern;

etching the protection layer and exposing an upper portion of the line-end cut pattern;

reducing a width of the line-end cut pattern;

etching the spacer layer to expose the first mandrel and the second mandrel; and

patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.

2. The method of claim 1 , wherein forming the line-end cut atte comprises:

forming a patterned mask over the spacer layer, the patterned mask comprising an opening exposing a portion of the spacer layer between the first mandrel and the second mandrel;

depositing a sacrificial material in the opening; and

removing excess portions of the sacrificial material over the opening using a planarization operation.

3. The method of claim 1 , wherein the etching of the protection layer is performed by a same operation as that reducing the width of the line-end cut pattern.

4. The method of claim 1 , wherein the reducing of the width of the line-end cut pattern also reduces a height of the line-end cut pattern.

5. The method of claim 1 , wherein depositing a protection layer over the line-end cut pattern comprises depositing the protection layer to cover an upper surface and sidewalls of the spacer layer.

6. The method of claim 1 , wherein etching the protection layer comprises etching sidewalk of the protection layer with a first etch rate and horizontal portions of the protection layer with a second etch rate less than the first etch rate.

7. The method of claim 1 , wherein the protection layer comprises at least one of a nitride, an oxide and a carbon-based material.

8. The method of claim 1 , wherein the line-end cut pattern comprises titanium oxide, tantalum oxide, silicon oxide, silicon nitride, silicon carbide, or a combination thereof.

9. The method of claim 1 , wherein the line-end cut pattern comprises at least one pillar, further comprising patterning a target layer using the patterned mask layer and forming segments of a conductive line in the target layer, wherein a width of the pillar corresponds to a spacing of the segments.

10. The method of claim 1 , wherein the line-end cut pattern masks a second horizontal portion of the spacer layer from being etched while the spacer layer is being etched.

11. A method of manufacturing a semiconductor device, comprising:

providing a mandrel layer having a first opening;

depositing a spacer layer over and along sidewalls of the first opening;

forming a first patterned mask over the spacer layer, wherein the first patterned mask comprises a second opening exposing a first portion of the spacer layer;

filling the second opening with a sacrificial material;

planarizing the sacrificial material and the first pattered mask;

removing the planarized first patterned mask while leaving the sacrificial material in the second opening to form a line-end cut pattern;

depositing a protection layer to cover the line-end cut pattern;

etching a lateral portion of the protection layer to expose sidewalls of the spacer layer and removing a thickness of the line-end cut pattern;

completely removing the protection layer;

patterning the spacer layer so that a second portion of the spacer layer remain on sidewalls of the mandrel layer; and

forming a second patterned mask by removing the mandrel layer while leaving the line-end cut pattern and the patterned spacer layer.

12. The method of claim 11 , wherein the sacrificial material is differentiated from the spacer layer by an etching selectivity of between about 3 and about 10.

13. The method of claim 11 , wherein the protection layer is differentiated from the spacer layer by an etching selectivity of between about 3 and about 10.

14. The method of claim 11 , wherein the sacrificial material is an inorganic material.

15. The method of claim 11 , wherein the line-end cut pattern masks a bottom portion of the spacer layer in the first opening from being etched while the spacer layer is patterned.

16. The method of claim 11 , wherein forming a first patterned mask over the spacer layer comprises:

depositing a photoresist stack over the spacer layer; and

forming the second opening through the photoresist stack.

17. The method of claim 16 , wherein depositing a photoresist stack over the spacer layer comprises:

depositing a bottom layer over the spacer layer;

depositing a middle layer over the bottom layer;

depositing an upper layer over the middle layer; and

prior to depositing the sacrificial material in the second opening, removing the upper layer.

18. A method comprising:

patterning a plurality of mandrels over a mask layer;

depositing a spacer layer over and along sidewalls of the plurality of mandrels;

forming a patterned mask over the spacer layer, the patterned mask comprising an opening exposing a portion of the spacer layer between two adjacent mandrels;

depositing a sacrificial material over the patterned mask in the opening;

removing the patterned mask thereby forming a line-end cut pattern on the spacer layer;

depositing a protection layer to cover the sacrificial material and the spacer layer;

performing an isotropic etching on the protection layer to expose the line-end cut pattern;

etching sidewalls of the line-end cut pattern;

patterning the spacer layer to expose the plurality of mandrels;

removing the plurality of mandrels; and

patterning the mask layer using sidewall portions of the spacer layer and the etched line-end cut pattern as an etch mask.

19. The method of claim 18 , further comprising completely removing the protection layer prior to patterning the spacer layer.

20. The method of claim 18 , wherein depositing the sacrificial material comprises depositing the sacrificial material at about 200° C. or below.