Interconnect layout for semiconductor device
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.
1. A semiconductor device comprising:
a substrate;
a deep trench capacitor (DTC) within the substrate; and
an interconnect structure over the DTC and the substrate, the interconnect structure comprising:
a seal ring structure in electrical contact with the substrate;
a first conductive via in electrical contact with the DTC; and
a first conductive line electrically coupling the seal ring structure to the first conductive via, wherein a portion of the first conductive line is a part of the seal ring structure.
2. The semiconductor device of claim 1 , further comprising a doped region in the substrate, the doped region being in electrical contact with the seal ring structure.
3. The semiconductor device of claim 2 , wherein the seal ring structure comprises:
a second conductive via, the second conductive via being in physical contact with the doped region and the first conductive line; and
a second conductive line over the second conductive via, the second conductive line being above the first conductive line.
4. The semiconductor device of claim 2 , wherein the seal ring structure comprises:
a second conductive via in physical contact with the doped region; and
a second conductive line over the second conductive via, the second conductive line being below the first conductive line.
5. The semiconductor device of claim 2 , wherein the interconnect structure further comprises a second conductive line over the first conductive line, the second conductive line electrically coupling the seal ring structure to the first conductive via.
6. The semiconductor device of claim 1 , wherein the interconnect structure further comprises a second conductive via in electrical contact with the DTC.
7. The semiconductor device of claim 6 , wherein the first conductive line electrically couples the seal ring structure to the second conductive via.
8. A semiconductor device comprising:
a substrate;
a deep trench capacitor (DTC) within the substrate;
an interconnect structure over the DTC and the substrate, the interconnect structure comprising:
a seal ring structure in electrical contact with the substrate;
a first conductive line in electrical contact with the DTC; and
a second conductive line electrically coupling the seal ring structure to the first conductive line; and
a contact pad over the interconnect structure, the contact pad being electrically coupled to the substrate through the seal ring structure, wherein the contact pad is in physical contact with the first conductive line or the second conductive line.
9. The semiconductor device of claim 8 , wherein the second conductive line is interposed between the first conductive line and the DTC.
10. The semiconductor device of claim 8 , wherein the first conductive line is interposed between the second conductive line and the DTC.
11. The semiconductor device of claim 8 , wherein the interconnect structure further comprises a first conductive via electrically coupling the first conductive line to the second conductive line.
12. The semiconductor device of claim 8 , further comprising a doped region in the substrate, the doped region being in physical contact with the seal ring structure.
13. The semiconductor device of claim 12 , wherein the seal ring structure comprises:
a first conductive via, the first conductive via being in physical contact with the doped region; and
a second conductive via over the first conductive via, the second conductive via being in physical contact with the first conductive line.
14. The semiconductor device of claim 12 , wherein the seal ring structure comprises:
a first conductive via, the first conductive via being in physical contact with the doped region; and
a second conductive via over the first conductive via, the second conductive via being in physical contact with the second conductive line.
15. A semiconductor device comprising:
a substrate;
a doped region in the substrate;
a deep trench capacitor (DTC) in the substrate adjacent the doped region;
an interconnect structure over the DTC and the substrate, the interconnect structure comprising:
a first conductive via in physical contact with the doped region;
a second conductive via in physical contact with the DTC; and
a first conductive line electrically coupling the first conductive via to the second conductive via; and
a contact pad over the interconnect structure, the contact pad being electrically coupled to the doped region through the first conductive line and the first conductive via, wherein the first conductive line is in physical contact with the contact pad.
16. The semiconductor device of claim 15 , wherein the first conductive via is a part of a seal ring structure.
17. The semiconductor device of claim 15 , wherein the interconnect structure further comprises a third conductive via in physical contact with the DTC, the first conductive line electrically coupling the third conductive via to the second conductive via.
18. The semiconductor device of claim 15 , wherein the doped region comprises arsenic (As) or phosphorus (P).
19. The semiconductor device of claim 15 , wherein the doped region has a first width and a first depth, and wherein a ratio of the first width to the first depth is between about 0.5 and about 50.
20. The semiconductor device of claim 15 , wherein a first height of the first conductive via is greater than a second height of the second conductive via.