Semiconductor device including metal insulator metal capacitor
A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line on the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer; a second conductor; and an insulator between the first conductor and the second conductor, wherein the insulator surrounds the first conductor and the second conductor.
1. A semiconductor device, comprising:
a substrate;
a circuit layer over the substrate;
a test line on the circuit layer; and
a capacitor on the substrate, the capacitor comprising:
a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer;
a second conductor; and
an insulator between the first conductor and the second conductor, wherein the insulator surrounds the first conductor and the second conductor.
2. The semiconductor device of claim 1 , wherein the first conductor and the second conductor extend perpendicular to a top surface of the substrate.
3. The semiconductor device of claim 1 , wherein the first conductor is parallel to the second conductor.
4. The semiconductor device of claim 1 , wherein each of the first conductor and the second conductor comprises a main portion and a branch portion, and the branch portion of the first conductor extends toward the main portion of the second conductor, and the branch portion of the second conductor extends toward the main portion of the first conductor.
5. The semiconductor device of claim 4 , wherein the main portion of the first conductor is parallel to the main portion of the second conductor.
6. The semiconductor device of claim 4 , wherein the branch portion of the first conductor is perpendicular to the main portion of the first conductor.
7. The semiconductor device of claim 4 , wherein the branch portion of the second conductor is perpendicular to the main portion of the second conductor.
8. The semiconductor device of claim 1 , wherein the first conductor and the second conductor comprise metal.
9. A semiconductor device comprising:
a substrate;
a circuit layer over the substrate;
an insulator layer over the substrate and the circuit layer;
a test line extending through the insulator layer, wherein the test line is electrically connected to the circuit layer; and
a capacitor, wherein the capacitor comprises:
a first conductor extending through the insulator layer,
a second conductor extending through the insulator layer, wherein each of the first conductor and the second conductor is spaced from the circuit layer in a direction parallel to a top surface of the substrate, and
a portion of the insulator layer between the first conductor and the second conductor.
10. The semiconductor device of claim 9 , wherein the test line comprises a first material, and each of the first conductor and the second conductor comprises the first material.
11. The semiconductor device of claim 9 , wherein the test line has a serpentine shape.
12. The semiconductor device of claim 9 , wherein a width of the portion of the insulator layer between the first conductor and the second conductor is uniform in a direction perpendicular to a top surface of the substrate.
13. The semiconductor device of claim 9 , wherein each of the first conductor and the second conductor comprises:
a main portion, and
a branch portion, wherein the branch portion of the first conductor extends toward the main portion of the second conductor, and the branch portion of second conductor extends toward the main portion of the first conductor.
14. The semiconductor device of claim 13 , wherein the main portion of the first conductor is parallel to the main portion of the second conductor.
15. The semiconductor device of claim 13 , wherein the branch portion of the first conductor is perpendicular to the main portion of the first conductor.
16. The semiconductor device of claim 13 , wherein the branch portion of the second conductor is parallel to the branch portion of the first conductor.
17. A semiconductor device comprising:
a substrate;
a circuit layer over the substrate;
an insulator layer over the substrate and the circuit layer, wherein the insulator layer directly contacts a top surface of the circuit layer and a sidewall of the circuit layer;
a test line extending through the insulator layer, wherein the test line is electrically connected to the circuit layer; and
a capacitor spaced from the circuit layer, wherein the capacitor comprises:
a first conductor extending through the insulator layer, wherein the first conductor directly contacts a top surface of the substrate,
a second conductor extending through the insulator layer, and
a portion of the insulator layer between the first conductor and the second conductor.
18. The semiconductor device of claim 17 , wherein the first conductor comprises:
a main portion, and
a branch portion, wherein the branch portion extends toward the second conductor.
19. The semiconductor device of claim 18 , wherein the test line comprises a first portion and a second portion, the first portion is parallel to the main portion, and the second portion is perpendicular to the main portion.
20. The semiconductor device of claim 17 , wherein a height of the first conductor measured perpendicular to a top surface of the substrate is greater than a height of the test line measured perpendicular to the top surface of the substrate.