Semiconductor device and method for manufacturing same
A semiconductor device includes a thin film transistor, wherein: a semiconductor layer of the thin film transistor has a layered structure including a lower oxide semiconductor layer including In, Ga, Zn and Sn and an upper oxide semiconductor layer arranged on the lower oxide semiconductor layer and including In, Ga and Zn; a thickness of the lower oxide semiconductor layer is 20 nm or less; an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer is 5% or more; the upper oxide semiconductor layer includes no Sn, or an atomic ratio of Sn with respect to all metal elements of the upper oxide semiconductor layer is smaller than an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer; and a first angle θ 1 between a side surface and a lower surface of the lower oxide semiconductor layer is smaller than a second angle θ 2 between a side surface and a lower surface of the upper oxide semiconductor layer.
1. A semiconductor device comprising:
a substrate;
a thin film transistor supported on the substrate, the thin film transistor including a semiconductor layer, a gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer; and
an insulating layer covering the semiconductor layer or the thin film transistor, wherein:
the semiconductor layer has a layered structure including:
a lower oxide semiconductor layer including In, Ga, Zn and Sn; and
an upper oxide semiconductor layer arranged on the lower oxide semiconductor layer and including In, Ga and Zn;
a thickness of the lower oxide semiconductor layer is 5 nm or more and 20 nm or less;
an atomic ratio of Sn with respect to all metal elements included in the lower oxide semiconductor layer is 5% or more;
an atomic ratio of Sn with respect to all metal elements included in the upper oxide semiconductor layer is smaller than the atomic ratio of Sn with respect to the all metal elements included in the lower oxide semiconductor layer; and
a first slope between a side surface and a lower surface of the lower oxide semiconductor layer is smaller than a second slope between a side surface and a lower surface of the upper oxide semiconductor layer,
the lower oxide semiconductor film primarily includes a quaternary oxide of an In—Ga—Zn—Sn—O-based semiconductor,
the upper oxide semiconductor layer primarily includes a ternary oxide of an In—Ga—Zn—O-based semiconductor, and
as seen from a direction normal to the substrate, the semiconductor layer includes a source contact region electrically connected with the source electrode and a drain contact region electrically connected with the drain electrode, the upper oxide semiconductor layer being continuous between the source contact region and the drain contact region.
2. The semiconductor device according to claim 1 , wherein the thickness of the lower oxide semiconductor layer is smaller than a thickness of the upper oxide semiconductor layer.
3. The semiconductor device according to claim 1 , wherein the upper oxide semiconductor layer includes a plurality of layers having different composition ratios.
4. The semiconductor device according to claim 1 , wherein the gate electrode is arranged on a substrate side of the semiconductor layer, with the gate insulating layer interposed therebetween.
5. The semiconductor device according to claim 1 , wherein the gate electrode is arranged on an opposite side of the semiconductor layer away from the substrate, with the gate insulating layer interposed therebetween.
6. The semiconductor device according to claim 4 , wherein the source electrode and the drain electrode have a layered structure including a molybdenum layer and a copper layer arranged on the molybdenum layer, wherein the molybdenum layer is in contact with an upper surface of the gate insulating layer and an upper layer of the semiconductor layer.
7. The semiconductor device according to claim 1 , wherein the upper oxide semiconductor layer includes a crystalline portion.