Integrated circuit device and method of manufacturing the same
An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.
1. An integrated circuit device, comprising:
a substrate;
a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti) disposed over the substrate;
a dielectric layer disposed on the lower electrode; and
an upper electrode disposed on the dielectric layer, wherein:
the dielectric layer contacts an interface of the lower electrode, the interface including Ti and Nb nitride or Ti and Nb oxynitride in which a content ratio of a Ti atom to a Nb atom is 9:1 to 1:99, and
the lower electrode includes:
a main lower electrode layer including a Nb nitride layer doped with Ti; and
a lower interface electrode layer between the main lower electrode layer and the dielectric layer, the lower interface electrode layer including a Nb oxynitride layer doped with Ti.
2. The integrated circuit device as claimed in claim 1 , wherein:
the lower electrode further includes:
a multiple interface electrode layer including a plurality of lower interface electrode layers between the main lower electrode layer and the dielectric layer and having different content ratios of a Nb atom, and
the multiple interface electrode layer includes a Nb oxynitride layer doped with Ti, and
a content ratio of a Nb atom in each of the plurality of lower interface electrode layers gradually increases toward the dielectric layer.
3. The integrated circuit device as claimed in claim 1 , wherein the upper electrode includes:
a main upper electrode layer that is spaced apart from the dielectric layer; and
an upper interface electrode layer between the main lower electrode layer and the dielectric layer, the upper interface electrode layer including a Nb oxide layer doped with Ti or a Nb oxynitride layer doped with Ti.
4. The integrated circuit device as claimed in claim 1 , wherein:
the main lower electrode layer includes the Nb nitride layer including a plurality of kinds of dopants, and
the plurality of kinds of dopants include a first dopant formed of Ti and a second dopant formed of at least one selected from cobalt (Co), tin (Sn), vanadium (V), tantalum (Ta), dubnium (Db), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi).
5. The integrated circuit device as claimed in claim 1 , wherein the lower electrode includes a plurality of lower electrode layers having different content ratios of a Nb atom, a content ratio of a Nb atom in the plurality of lower electrode layers being greatest in the lower electrode layer closest to the dielectric layer.
6. The integrated circuit device as claimed in claim 1 , wherein the lower electrode includes a plurality of lower electrode layers having different content ratios of a Nb atom, provided that the lower electrode layer farthest from the dielectric layer does not include Nb.
7. The integrated circuit device as claimed in claim 1 , wherein
the main lower electrode layer is spaced apart from the dielectric layer.
8. An integrated circuit device, comprising:
a substrate including an active region;
a conductive region on the active region; and
a capacitor on the conductive region, the capacitor including:
a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti);
a dielectric layer disposed on the lower electrode; and
an upper electrode disposed on the dielectric layer, wherein:
the dielectric layer contacts an interface of the lower electrode, and
the lower electrode includes:
a pillar-shaped main lower electrode layer that longitudinally extends in a vertical direction away from the substrate on the conductive region; and
a lower interface electrode layer including a Nb oxynitride layer doped with Ti, the lower interface electrode layer covering an external surface of the pillar-shaped main lower electrode layer.
9. The integrated circuit device as claimed in claim 8 , wherein the upper electrode includes:
a main upper electrode layer without Nb, which is spaced apart from the dielectric layer; and
an upper interface electrode layer between the main upper electrode layer and the dielectric layer and including a Nb oxynitride layer doped with Ti.
10. The integrated circuit device as claimed in claim 8 , wherein the lower electrode further includes at least one additional dopant selected from Co, Sn, V, Ta, Db, P, As, Sb, and Bi.
11. The integrated circuit device as claimed in claim 8 , wherein:
the pillar-shaped main lower electrode layer includes a Nb nitride layer doped with Ti, and
the dielectric layer includes a metal oxide layer.
12. The integrated circuit device as claimed in claim 8 , wherein:
the pillar-shaped main lower electrode layer is without Nb.
13. An integrated circuit device, comprising:
a substrate including an active region;
a conductive region on the active region; and
a capacitor on the conductive region, the capacitor including:
a lower electrode including at least one selected from a Nb nitride layer doped with Ti, a Nb oxide layer doped with Ti, and a Nb oxynitride layer doped with Ti;
a dielectric layer disposed on the lower electrode and including a metal oxide layer; and
an upper electrode disposed on the dielectric layer, wherein:
the dielectric layer contacts an interface of the lower electrode, and
the lower electrode includes:
a main lower electrode layer that is spaced apart from the dielectric layer and includes TiN; and
a lower interface electrode layer between the main lower electrode layer and the dielectric layer, the lower interface electrode layer having a top surface that contacts the dielectric layer, and including a Nb oxide layer doped with Ti or a Nb oxynitride layer doped with Ti.