Semiconductor device, and method of manufacturing the semiconductor device
View Patent ↗A semiconductor device having a large storage capacity per unit area is provided. The semiconductor device includes a memory transistor. The memory transistor includes a conductor including an opening, a first insulator provided in contact with an inner side of the opening, a second insulator provided in contact with an inner side of the first insulator, a third insulator provided in contact with an inner side of the second insulator, a first oxide provided in contact with an inner side of the third insulator, and a second oxide provided in contact with an inner side of the first oxide. An energy gap of the second oxide is narrower than an energy gap of the first oxide.
1. A semiconductor device comprising a memory transistor,
the memory transistor comprising:
a conductor comprising an opening;
a first insulator provided in contact with an inner side of the opening;
a second insulator provided in contact with an inner side of the first insulator;
a third insulator provided in contact with an inner side of the second insulator;
a first oxide provided in contact with an inner side of the third insulator; and
a second oxide provided in contact with an inner side of the first oxide,
wherein each of the first oxide and the second oxide comprises In, an element M, and Zn,
wherein the element M is at least one of Al, Ga, Y, and Sn,
wherein the element M for the first oxide and the element M of the second oxide are the same, and
wherein an energy gap of the second oxide is narrower than an energy gap of the first oxide.
2. The semiconductor device according to claim 1 ,
wherein an atomic ratio of In in the second oxide is greater than an atomic ratio of the element Min the second oxide.
3. The semiconductor device according to claim 1 ,
wherein an atomic ratio of the element M to In in the first oxide is greater than an atomic ratio of the element M to In in the second oxide.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor device further comprises a base,
wherein the semiconductor device comprises a plurality of memory transistors over the base, and
wherein the plurality of memory transistors are stacked in a direction perpendicular to one surface included in the base.
5. The semiconductor device according to claim 1 ,
wherein the first insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
6. The semiconductor device according to claim 1 ,
wherein the third insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
7. The semiconductor device according to claim 1 ,
wherein the third insulator is thinner than the first insulator.
8. A semiconductor device comprising a memory transistor,
the memory transistor comprising:
a conductor comprising an opening;
a first insulator provided in contact with an inner side of the opening;
a second insulator provided in contact with an inner side of the first insulator;
a third insulator provided in contact with an inner side of the second insulator;
a first oxide provided in contact with an inner side of the third insulator;
a second oxide provided in contact with an inner side of the first oxide; and
a third oxide provided in contact with an inner side of the second oxide,
wherein each of the first oxide and the second oxide comprises In, an element M, and Zn,
wherein the element M is at least one of Al, Ga, Y, and Sn,
wherein the element M for the first oxide and the element M of the second oxide are the same,
wherein an energy gap of the second oxide is narrower than an energy gap of the first oxide, and
wherein an energy gap of the second oxide is narrower than an energy gap of the third oxide.
9. The semiconductor device according to claim 8 ,
wherein the memory transistor further comprises a fourth insulator, and
wherein the fourth insulator is provided in contact with an inner side of the third oxide.
10. The semiconductor device according to claim 8 ,
wherein an atomic ratio of In in the second oxide is greater than an atomic ratio of the element M in the second oxide.
11. The semiconductor device according to claim 8 ,
wherein an atomic ratio of the element M to In in the first oxide is greater than an atomic ratio of the element M to In in the second oxide.
12. The semiconductor device according to claim 8 ,
wherein the semiconductor device further comprises a base,
wherein the semiconductor device comprises a plurality of memory transistors over the base, and
wherein the plurality of memory transistors are stacked in a direction perpendicular to one surface included in the base.
13. The semiconductor device according to claim 8 ,
wherein the first insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
14. The semiconductor device according to claim 8 ,
wherein the third insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
15. The semiconductor device according to claim 8 ,
wherein the third insulator is thinner than the first insulator.
16. A semiconductor device comprising a memory transistor,
the memory transistor comprising:
a conductor comprising an opening;
a first insulator provided in contact with an inner side of the opening;
a second insulator provided in contact with an inner side of the first insulator;
a third insulator provided in contact with an inner side of the second insulator;
a first oxide provided in contact with an inner side of the third insulator; and
a second oxide provided in contact with an inner side of the first oxide,
wherein each of the first oxide and the second oxide comprises In, Ga, and Zn, and
wherein an atomic ratio of In in the second oxide is greater than an atomic ratio of Ga in the second oxide.
17. The semiconductor device according to claim 16 ,
wherein an atomic ratio of Ga in the first oxide is greater than an atomic ratio of In in the first oxide.
18. The semiconductor device according to claim 16 ,
wherein an atomic ratio of Ga to In in the first oxide is greater than an atomic ratio of Ga to In in the second oxide.
19. The semiconductor device according to claim 16 ,
wherein the third insulator is thinner than the first insulator.
20. The semiconductor device according to claim 16 ,
wherein the semiconductor device further comprises a base,
wherein the semiconductor device comprises a plurality of memory transistors over the base, and
wherein the plurality of memory transistors are stacked in a direction perpendicular to one surface included in the base.
21. The semiconductor device according to claim 16 ,
wherein the first insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
22. The semiconductor device according to claim 16 ,
wherein the third insulator is an oxide comprising any one of silicon, aluminum, and hafnium.