Semiconductor device with oxide semiconductor layer for memory cells
According to one embodiment, a semiconductor device includes a conductive layer, an oxide semiconductor layer provided penetrating the conductive layer in a first direction, and a first insulating film provided between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction. The first insulating film comprises boron nitride.
1 . A semiconductor device, comprising:
a conductive layer;
an oxide semiconductor layer penetrating the conductive layer in a first direction; and
a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction, wherein
the first insulating film comprises boron nitride, and
the first insulating film is hexagonal crystal boron nitride.
2 . The semiconductor device according claim 1 , further comprising:
a capacitor electrically connected to the oxide semiconductor layer.
3 . A semiconductor device, comprising:
a conductive layer;
an oxide semiconductor layer penetrating the conductive layer in a first direction;
a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction; and
a second insulating film between the conductive layer and the first insulating film in the second direction, wherein
the first insulating film comprises boron nitride, and
the second insulating film comprises silicon, aluminum, oxygen, and nitrogen.
4 . The semiconductor device according to claim 3 , further comprising:
a third insulating film between the oxide semiconductor layer and the conductive layer in the second direction.
5 . The semiconductor device according to claim 4 , further comprising:
a fourth insulating film between the oxide semiconductor layer and the conductive layer in the second direction, wherein
the second insulating film is between the third and fourth insulating films in the second direction.
6 . The semiconductor device according to claim 5 , wherein the fourth insulating film comprises silicon and nitrogen.
7 . The semiconductor device according to claim 4 , wherein the third insulating film comprises aluminum and oxygen.
8 . The semiconductor device according claim 3 , further comprising:
a capacitor electrically connected to the oxide semiconductor layer.
9 . A semiconductor device, comprising:
a conductive layer:
an oxide semiconductor layer penetrating the conductive layer in a first direction;
a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction; and
a second insulating film between the first insulating film and the oxide semiconductor layer in the second direction, wherein
the first insulating film comprises boron nitride, and
the second insulating film comprises silicon, aluminum, oxygen, and nitrogen.
10 . The semiconductor device according claim 9 , further comprising:
a capacitor electrically connected to the oxide semiconductor layer.
11 . A semiconductor device, comprising:
a conductive layer having a first surface and a second surface on a side opposite to that of the first surface in a first direction;
an oxide semiconductor layer penetrating the conductive layer in the first direction;
a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction; and
a first conductive film on at least one of the first surface and the second surface of the conductive layer, wherein
the first conductive film is a hydrogen absorbing material.
12 . The semiconductor device according to claim 11 , further comprising:
a second insulating film between the first insulating film and the oxide semiconductor layer or between the first insulating film and the conductive layer, wherein
the second insulating film comprises boron nitride.
13 . The semiconductor device according to claim 11 , further comprising:
a second insulating film between the first insulating film and the oxide semiconductor layer or between the first insulating film and the conductive layer, wherein
the second insulating film comprises silicon, aluminum, oxygen, and nitrogen.
14 . The semiconductor device according to claim 11 , wherein the first conductive film comprises at least one element selected from a group of niobium, vanadium, zirconium, tantalum, titanium, palladium, nickel, molybdenum, iron, and platinum.
15 . The semiconductor device according to claim 11 , further comprising:
a second conductive film on one side or both sides of the oxide semiconductor layer in the first direction, wherein
the second conductive film is a hydrogen absorbing material.
16 . The semiconductor device according to claim 15 , wherein the second conductive film comprises at least one element selected from a group of niobium, vanadium, zirconium, tantalum, titanium, palladium, nickel, molybdenum, iron, and platinum.
17 . The semiconductor device according to claim 11 , further comprising:
a capacitor electrically connected to the oxide semiconductor layer.
18 . A semiconductor device, comprising:
a conductive layer;
an oxide semiconductor column penetrating the conductive layer in a first direction;
a first insulating film between the conductive layer and the oxide semiconductor column in a second direction that intersects the first direction; and
a capacitor connected to an end of the oxide semiconductor column, wherein
the first insulating film is a hexagonal crystal boron nitride.
19 . The semiconductor device according to claim 18 , further comprising:
a second insulating film between the conductive layer and the first insulating film in the second direction, wherein
the second insulating film is silicon aluminum oxynitride.
20 . The semiconductor device according to claim 19 , further comprising:
a third insulating film between the oxide semiconductor column and the conductive layer in the second direction.
21 . The semiconductor device according to claim 20 , further comprising:
a fourth insulating film between the oxide semiconductor column and the conductive layer in the second direction, wherein
the second insulating film is between the third and fourth insulating films in the second direction.