Semiconductor device and manufacturing method thereof
The present disclosure generally relates to a gate-all-around (GAA) transistor. The GAA transistor may include regrown source/drain layers in source/drain stressors. Atomic ratio differences among the regrown source/drain layers are tuned to reduce strain mismatch among the semiconductor nanosheets. Alternatively, the GAA transistor may include strained channels formed using a layer stack of alternating semiconductor layers having different lattice constants.
1. A method, comprising:
forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate;
forming a dummy gate structure across the fin structure;
etching portions of the fin structure that extend laterally beyond the dummy gate structure to expose portions of the substrate;
forming source/drain stressors over the exposed portions of the substrate, wherein forming the source/drain stressors comprises:
forming a first source/drain layer over the exposed portions of the substrate; and
forming a second source/drain layer over the first source/drain layer, wherein an atomic concentration of a Group IV element or a Group V element in the second source/drain layer is greater than an atomic concentration of a Group IV element or a Group V element in the first source/drain layer;
after forming the source/drain stressors, removing the dummy gate structure;
after removing the dummy gate structure, removing the first semiconductor layers such that the second semiconductor layers are suspended between the source/drain stressors; and
forming a gate structure to surround each of the suspended second semiconductor layers.
2. The method of claim 1 , wherein forming the first source/drain layer comprises an epitaxial process performed at a first flow rate ratio of a germanium precursor gas to a silicon precursor gas, and forming the second source/drain layer comprises an epitaxial process performed at a second flow rate ratio of the germanium precursor gas to the silicon precursor gas greater than the first flow rate ratio.
3. The method of claim 1 , wherein forming first source/drain layer comprises an epitaxial process performed at a first flow rate ratio of a tin precursor gas to a germanium precursor gas, and forming the second source/drain layer comprises an epitaxial process performed at a second flow rate ratio of the tin precursor gas to the germanium precursor gas greater than the first flow rate ratio.
4. The method of claim 1 , wherein forming the first source/drain layer comprises an epitaxial process performed at a first flow rate ratio of a phosphorous precursor gas to a silicon precursor gas, and forming the second source/drain layer comprises an epitaxial process performed at a second flow rate ratio of the phosphorous precursor gas to the silicon precursor gas greater than the first flow rate ratio.
5. The method of claim 1 , wherein forming the first source/drain layer is performed such that a lower portion of a sidewall of the fin structure is covered by the first source/drain layer, and an upper portion of the sidewall of the fin structure above the lower portion is free from coverage by the first source/drain layer.
6. The method of claim 5 , wherein forming the second source/drain layer is performed such that the upper portion of the sidewall of the fin structure is covered by the second source/drain layer.
7. The method of claim 1 , wherein forming the first source/drain layer comprises epitaxially growing a material of the first source/drain layer on a sidewall of the fin structure, and removing the material of the first source/drain layer from the sidewall of the fin structure by an etching gas.
8. The method of claim 7 , wherein the material of the first source/drain layer has a faster growth rate from the exposed portions of the substrate than from the sidewall of the fin structure.
9. The method of claim 8 , wherein the exposed portions of the substrate have a (100) surface orientation.
10. The method of claim 8 , wherein the sidewall of the fin structure has a (110) surface orientation.
11. The method of claim 1 , wherein forming the second source/drain layer comprises epitaxially growing a material of the second source/drain layer on a sidewall of the fin structure, and removing the material of the second source/drain layer from the sidewall of the fin structure by an etching gas.
12. A semiconductor device, comprising:
a plurality of nanosheets extending in a first direction above a semiconductor substrate and arranged in a second direction substantially perpendicular to the first direction;
source/drain stressors on either side of the nanosheets, each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer, wherein the first and second epitaxial layers are made of an alloy semiconductor of a first Group IV element and a second Group IV element having a lattice constant greater than a lattice constant of the first Group IV element, and an atomic ratio of the second Group IV element to the first Group IV element in the second epitaxial layer is greater than an atomic ratio of the second Group IV element to the first Group IV element in the first epitaxial layer; and
a gate structure wrapping around each of the nanosheets.
13. The semiconductor device of claim 12 , wherein the nanosheets comprises a first nanosheet and a second nanosheet above the first nanosheet, and a compressive strain in the second nanosheet is greater than a compressive strain in the first nanosheet.
14. The semiconductor device of claim 12 , wherein the nanosheets comprises a first nanosheet and a second nanosheet above the first nanosheet, and the second nanosheet is in contact with the second epitaxial layer and spaced from the first epitaxial layer.
15. The semiconductor device of claim 12 , wherein the first Group IV element is silicon, and the second Group IV element is germanium.
16. The semiconductor device of claim 12 , wherein the first Group IV element is germanium, and the second Group IV element is tin.
17. A method, comprising:
forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, wherein a concentration of an impurity of a first conductivity type in the first semiconductor layers is greater than a concentration of an impurity of the first conductivity type in the second semiconductor layers, and the second semiconductor layers have a lattice constant different than a lattice constant of the first semiconductor layers;
forming a dummy gate structure across the fin structure;
forming gate spacers on opposite sidewalls of the dummy gate structure, respectively;
removing the dummy gate structure to form a gate trench between the gate spacers;
removing portions of the first semiconductor layers in the gate trench, such that channel regions of the second semiconductor layers are suspended above the substrate;
forming a gate structure to surround each of the suspended channel regions; and
after forming the gate structure, performing a first annealing process to diffuse the impurity of the first conductivity type from the first semiconductor layers into source/drain regions of the second semiconductor layers.
18. The method of claim 17 , further comprising:
forming a strain-relaxed buffer layer over the substrate prior to forming the fin structure; and
performing a second annealing process on the strain-relaxed buffer layer to convert the strain-relaxed buffer layer into a buffer layer with a tensile strain prior to forming the fin structure.
19. The method of claim 18 , wherein the strain-relaxed buffer layer is doped with an impurity of a second conductivity type opposite the first conductivity type.
20. The method of claim 17 , further comprising:
after performing the first annealing process, irradiating the first semiconductor layers and the source/drain regions of the second semiconductor layers with laser.