Gate-all-around transistor with strained channels
The present disclosure provides a semiconductor device with a plurality of semiconductor channel layers. The semiconductor channel layers include a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer. A strain in the second semiconductor layer is different from a strain in the first semiconductor layer. A gate is disposed over the plurality of semiconductor channel layers.
1. A device, comprising:
a first semiconductor channel layer over a substrate;
a second semiconductor channel layer over the first semiconductor channel layer, wherein a compressive strain in the second semiconductor channel layer is greater than a compressive strain in the first semiconductor channel layer; and
source/drain epitaxial structures on opposite sides of the first semiconductor channel layer and opposite sides of the second semiconductor channel layer, wherein the source/drain epitaxial structures each comprise a first region interfacing the first semiconductor channel layer and a second region interfacing the second semiconductor channel layer, and the first region has a composition different from a composition of the second region.
2. The device of claim 1 , wherein the second region of the source/drain epitaxial structures has a germanium atomic concentration greater than a germanium atomic concentration of the first region of the source/drain epitaxial structures.
3. The device of claim 1 , further comprising:
a third semiconductor channel layer over the second semiconductor channel layer, wherein a compressive strain in the third semiconductor channel layer is greater than the compressive strain in the second semiconductor channel layer.
4. The device of claim 3 , wherein each of the source/drain epitaxial structures further comprises a third region interfacing the third semiconductor channel layer, wherein the third region has a composition different from the composition of the second region.
5. The device of claim 4 , wherein the third region of the source/drain epitaxial structures has a germanium atomic concentration greater than a germanium atomic concentration of the second region of the source/drain epitaxial structures.
6. The device of claim 4 , wherein the third region of the source/drain epitaxial structures has a germanium atomic concentration greater than a germanium atomic concentration of the first region of the source/drain epitaxial structures.
7. The device of claim 3 , further comprising:
a fourth semiconductor channel layer over the third semiconductor channel layer, wherein a compressive strain in the fourth semiconductor channel layer is greater than the compressive strain in the third semiconductor channel layer.
8. The device of claim 7 , wherein two or more of the first semiconductor channel layer, the second semiconductor channel layer, the third semiconductor channel layer, and the fourth semiconductor channel layer are formed of a same material.
9. The device of claim 1 , wherein the source/drain epitaxial structures are made of an alloy semiconductor of a first Group IV element and a second Group IV element, and the second Group IV element has a lattice constant greater than a lattice constant of the first Group IV element.
10. The device of claim 9 , wherein an atomic ratio of the second Group IV element to the first Group IV element in the second region is greater than an atomic ratio of the second Group IV element to the first Group IV element in the first region.
11. A device, comprising:
a plurality of channel layers formed of a first alloy semiconductor of a first Group IV element and a second Group IV element; and
a source/drain region interfacing the plurality of channel layers, the source/drain region comprising a first epitaxial layer interfacing a first one of the plurality of channel layers, and a second epitaxial layer interfacing a second one of the plurality of channel layer, the first epitaxial layer formed of a second alloy semiconductor of the first Group IV element and the second Group IV element, the second epitaxial layer formed of a third alloy semiconductor of the first Group IV element and the second Group IV element,
wherein an atomic concentration of the second Group IV element in the third alloy semiconductor is greater than an atomic concentration of the second Group IV element in the second alloy semiconductor, and the atomic concentration of the second Group IV element in the second alloy semiconductor is greater than an atomic concentration of the second Group IV element in the first alloy semiconductor.
12. The device of claim 11 , wherein the second Group IV element is Sn.
13. The device of claim 12 , wherein the first Group IV element is Ge.
14. The device of claim 11 , wherein the second Group IV element is Ge.
15. The device of claim 14 , wherein the first Group IV element is Si.
16. A device, comprising:
a first plurality of strained semiconductor layers over a substrate;
a second plurality of strained semiconductor layers alternating with the first plurality of strained semiconductor layers, wherein a tensile strain in the second plurality of strained semiconductor layers is greater than a tensile strain in the first plurality of strained semiconductor layers; and
a gate structure extending through the first plurality of strained semiconductor layers to surround channel regions of the second plurality of strained semiconductor layers.
17. The device of claim 16 , wherein the second plurality of strained semiconductor layers comprise silicon germanium.
18. The device of claim 16 , wherein a germanium atomic concentration in the second plurality of strained semiconductor layers is greater than a silicon concentration in the first plurality of strained semiconductor layers.
19. The device of claim 16 , wherein an n-type dopant concentration in the first plurality of strained semiconductor layers is greater than an n-type dopant concentration in the second plurality of strained semiconductor layers.
20. The device of claim 16 , wherein a tensile strain in the channel region of an upper one of the second plurality of strained semiconductor layers is greater than a tensile strain in the channel region of a lower one of the second plurality of strained semiconductor layers.