Electronic device
An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.
1. An electronic device, comprising:
a substrate;
a metal layer disposed on the substrate and having a first surface;
a first insulating layer disposed on the first surface of the metal layer;
a second insulating layer disposed on the first insulating layer;
a contact hole penetrating through the first insulating layer and the second insulating layer and exposing a portion of the first surface of the metal layer;
a recess adjacent to a boundary between the metal layer and the first insulating layer; and
a transparent conductive layer disposed on the second insulating layer and electrically connecting with the metal layer,
wherein a ratio of a length of the recess to a thickness of the transparent conductive layer is in a range from 0.01 to 0.2.
2. The electronic device of claim 1 , wherein the length of the recess is in a range from 0.01 nm to 100 nm.
3. The electronic device of claim 1 , wherein the thickness of the transparent conductive layer is in a range from 400 nm to 2000 nm.
4. The electronic device of claim 1 , wherein a depth of the recess is in a range from 20 nm to 100 nm.
5. The electronic device of claim 1 , wherein the second insulating layer includes an organic layer.
6. The electronic device of claim 1 , wherein the metal layer comprises Cu or Cu alloy.
7. The electronic device of claim 1 , wherein the first insulating layer comprises silicon nitride.
8. The electronic device of claim 1 , wherein a refractive index of the second insulating layer is substantially the same as a refractive index of the first insulating layer.