Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.
1. A semiconductor device, comprising:
a device isolation layer defining an active region in a substrate;
a first trench in the active region;
a second trench in the device isolation layer;
a main gate electrode structure filling a lower portion of the first trench, the main gate electrode structure including a first barrier conductive layer and a main gate electrode;
a pass gate electrode structure filling a lower portion of the second trench, the pass gate electrode structure including a second barrier conductive layer and a pass gate electrode;
a support structure filling an upper portion of the second trench above the pass gate electrode;
a connection portion between the support structure and the pass gate electrode structure;
a first capping pattern filling an upper portion of the first trench above the main gate electrode; and
a second gate insulating layer extending along a bottom surface and a sidewall of the second trench,
wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom surface and a sidewall of the pass gate electrode, and
wherein the connection portion includes:
a support structure insulating layer extending along a bottom surface of the support structure and having a first thickness, and
a portion of the second gate insulating layer extending along a top surface of the pass gate electrode and having a second thickness different from the first thickness.
2. The semiconductor device as claimed in claim 1 , wherein the second barrier conductive layer includes a portion extending along a top surface of the pass gate electrode.
3. The semiconductor device as claimed in claim 1 , wherein the support structure insulating layer includes an oxide that is different from an oxide included in the second gate insulating layer.
4. The semiconductor device as claimed in claim 1 , wherein a maximum width of the first capping pattern and a maximum width of the support structure are different from each other.
5. The semiconductor device as claimed in claim 1 , further comprising a first gate insulating layer extending along a bottom surface and a sidewall of the first trench.
6. The semiconductor device as claimed in claim 5 , wherein the first barrier conductive layer is between the first gate insulating layer and the main gate electrode and extends along a bottom surface and a sidewall of the main gate electrode.
7. The semiconductor device as claimed in claim 1 , wherein, with respect to a top surface of the substrate, the first capping pattern has a first height, the support structure has a second height, and the first height is smaller than the second height.
8. The semiconductor device as claimed in claim 1 , further comprising:
a first interlayer insulating layer on the substrate; and
a first contact structure passing through the first interlayer insulating layer in a thickness direction of the first interlayer insulating layer.
9. The semiconductor device as claimed in claim 1 , wherein the first barrier conductive layer does not extend between a bottom surface of the first capping pattern and a top surface of the main gate electrode.
10. A semiconductor device, comprising:
an active region extending in a first direction in a substrate;
a device isolation layer defining the active region in the substrate;
a second gate trench in the device isolation layer, the second gate trench extending in a second direction forming a first acute angle with respect to the first direction;
a pass gate electrode filling a lower portion of the second gate trench in the device isolation layer;
a support structure filling an upper portion of the second gate trench above the pass gate electrode; and
a second barrier conductive layer extending along a surface between a top surface of the pass gate electrode and a bottom surface of the support structure.
11. The semiconductor device as claimed in claim 10 , wherein the second barrier conductive layer further extends along a sidewall and a bottom surface of the pass gate electrode.
12. The semiconductor device as claimed in claim 10 , further comprising:
a first gate trench extending in the second direction forming a first acute angle with respect to the first direction in the active region;
a main gate electrode filling a lower portion of the first gate trench in the active region; and
a first capping pattern filling an upper portion of the first gate trench above the main gate electrode.
13. The semiconductor device as claimed in claim 12 , wherein a height of the first capping pattern is smaller than a height of the support structure, with respect to a top surface of the substrate.
14. The semiconductor device as claimed in claim 10 , further comprising:
a second gate insulating layer extending along a bottom surface and a sidewall of the second gate trench; and
a connection portion between the support structure and the pass gate electrode,
wherein the connection portion includes:
a support structure insulating layer extending along a bottom surface of the support structure and having a first thickness, and
a portion of the second gate insulating layer extending along a top surface of the pass gate electrode and having a second thickness different from the first thickness.
15. A semiconductor device, comprising:
a device isolation layer defining an active region in a substrate;
a first trench in the active region;
a second trench in the device isolation layer;
a main gate electrode structure filling a lower portion of the first trench, the main gate electrode structure including a first barrier conductive layer and a first filling conductive layer;
a pass gate electrode structure filling a lower portion of the second trench, the pass gate electrode structure including a second barrier conductive layer and a second filling conductive layer;
a support structure filling an upper portion of the second trench above the pass gate electrode structure; and
a first capping pattern filling an upper portion of the first trench above the main gate electrode structure,
wherein:
the second barrier conductive layer extends along a surface between a bottom surface of the support structure and a top surface of the second filling conductive layer,
a height of the support structure is greater than a height of the first capping pattern, with respect to a top surface of the substrate, and
a maximum width of the first capping pattern and a maximum width of the support structure are different from each other.
16. The semiconductor device as claimed in claim 15 , wherein:
the second barrier conductive layer extends along a bottom surface and a sidewall of the second filling conductive layer,
the semiconductor device further includes a second gate insulating layer extending along a bottom surface, a sidewall, and a top surface of the second barrier conductive layer.
17. The semiconductor device as claimed in claim 15 , further comprising a first gate insulating layer extending along a bottom surface and a sidewall of the first trench.
18. The semiconductor device as claimed in claim 15 , further comprising:
a support structure insulating layer extending along a bottom surface and a sidewall of the support structure;
a second gate insulating layer extending along a bottom surface and a sidewall of the second trench; and
a connection portion between the support structure and the pass gate electrode structure,
wherein the connection portion includes:
a portion of the support structure insulating layer extending along the bottom surface of the support structure and having a first thickness, and
a portion of the second gate insulating layer extending along a top surface of the pass gate electrode and having a second thickness different from the first thickness.
19. The semiconductor device as claimed in claim 15 , wherein the first barrier conductive layer extends along a bottom surface and a sidewall of the first filling conductive layer.