IP Library Granted Patent US 11,242,482
Granted Patent B2
US 11,242,482 · App. 16/769,607 · Granted Feb 8, 2022

Quantum dot, method for producing the same, resin composition, wavelength conversion material, and light emitting device

Inventor: Yoshihiro Nojima (Annaka, JP)
Assignee: SHIN-ETSU CHEMICAL CO., LTD.
C09K11/025C08L83/04C09K11/02C09K11/59C09K11/70H01L33/50H01L33/502B82Y20/00B82Y30/00
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Quick Facts
Patent No.
US 11,242,482
App. No.
16/769,607
Granted
Feb 8, 2022
Kind
B2
Abstract

A quantum dot including a semiconductor crystal particle having a particle diameter of 20 nm or less, and a ligand having two or more functional groups for interaction with the semiconductor crystal particle coordinates to two or more sites on a surface of the semiconductor crystal particle. A quantum dot with enhanced stability through surface modification on the semiconductor crystal particle by using a ligand which has two or more functional groups for interaction with the semiconductor crystal particle, and which coordinates to two or more sites on the semiconductor particle surface.

Claims (13)

1. A quantum dot comprising a semiconductor crystal particle having a particle diameter of 20 nm or less, wherein

a ligand having two or more functional groups for interaction with the semiconductor crystal particle coordinates to two or more sites on a surface of the semiconductor crystal particle,

the surface of the quantum dot is further coated with a polymer, and

the polymer is polysilsesquioxane, poly (methyl methacrylate), polyacrylonitrile or polyethylene glycol.

2. A resin composition comprising the quantum dot according to claim 1 dispersed in a resin.

3. A wavelength conversion material comprising a cured product of the resin composition according to claim 2 .

4. A light emitting device comprising the wavelength conversion material according to claim 3 .

5. A method for producing a quantum dot comprising a semiconductor crystal particle having a particle diameter of 20 nm or less, the method comprising a step of surface-treating the semiconductor crystal particle with a ligand which has two or more functional groups for interaction with the semiconductor crystal particle, and which coordinates to two or more sites on the semiconductor crystal particle, and

a step of forming a polymer layer by utilizing, as a reaction point, another functional group which the ligand has, but which is different from the functional groups coordinating to the semiconductor crystal particle, wherein

the polymer layer is polysilsesquioxane, poly (methyl methacrylate), polyacrylonitrile or polyethylene glycol.

6. A method for producing a quantum dot comprising a semiconductor crystal particle having a particle diameter of 20 nm or less, the method comprising substituting a ligand present on a surface of the semiconductor crystal particle with a ligand which has two or more functional groups for interaction with the semiconductor crystal particle, and which coordinates to two or more sites on the semiconductor crystal particle, and

forming a polymer layer by utilizing, as a reaction point, another functional group which the ligand has, but which is different from the functional groups coordinating to the semiconductor crystal particle, wherein

the polymer layer is polysilsesquioxane, poly (methyl methacrylate), polyacrylonitrile or polyethylene glycol.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2020
From: NOJIMA, YOSHIHIRO
To: SHIN-ETSU CHEMICAL CO., LTD.
Reel/Frame 052835/0645 →
Priority Claims (1)
JP JP2017-232506 · Dec 4, 2017 · national
Continuity (1)
Related Publication 20200317998A1 · Oct 8, 2020
Cited By (1)
US 12,283,647