Semiconductor device, method for manufacturing the same, and semiconductor module
Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.
1. A semiconductor device comprising:
a thin semiconductor element including a front-side electrode on a front side of the semiconductor element, and including a back-side electrode on a back side of the semiconductor element;
a metallic member formed on at least one of a front side of the front-side electrode and a back side of the hack-side electrode, the metallic member having a thickness equal to or greater than a thickness of the semiconductor element; and
a resin member in contact with a lateral side of the metallic member and surrounding a periphery of the metallic member, with a part of the front side of the semiconductor element being exposed,
wherein the metallic member is provided inside an outer circumference of the thin semiconductor element in a plan view.
2. The semiconductor device according to claim 1 , wherein the resin member surrounds a periphery of the semiconductor element.
3. The semiconductor device according to claim 2 , wherein the resin member is in contact with a lateral side of the semiconductor element and covers an outer periphery portion of at least one of the front side of the semiconductor element and the back side of the semiconductor element.
4. The semiconductor device according to claim 1 , wherein
a front side of the metallic member is in contact with the back side of the back-side electrode, and
the metallic member is larger in area than the back-side electrode in a plan View.
5. The semiconductor device according to claim 4 , wherein the resin member covers an outer periphery portion of at least one of the front side of the metallic member and a back side of the metallic member.
6. The semiconductor device according to claim 3 , wherein
the metallic member is smaller in area than the back-side electrode in a plan view,
a front side of the metallic member is in contact with the back side of the back-side electrode, and
the resin member is in contact with the back side of the back-side electrode.
7. The semiconductor device according to claim 3 , wherein
a back side of the metallic member is in contact with the front side of the front-side electrode, and
the resin member is higher or lower than a height of a front side of the metallic member.
8. The semiconductor device according to claim 1 , wherein the semiconductor element has a thickness of not less than 30 μm and not more than 150 μm.
9. The semiconductor device according to claim 1 , wherein the metallic member has a thickness such that a flexural rigidity of the metallic member is equal to or greater than a flexural rigidity of the semiconductor element on which the metallic member is formed.
10. The semiconductor device according to claim 1 , wherein an entire back side of the metallic member opposite to a front side of the metallic member joined to the back side of the back-side electrode is exposed from the resin member.
11. A method for manufacturing a semiconductor device comprising:
an electrode formation step to form a front-side electrode on a front side of a thin semiconductor wafer, and form a back-side electrode on a back side of the semiconductor wafer;
a metallic member formation step to form a metallic member on at least one of a front side of the front-side electrode and a back side of the back-side electrode;
a semiconductor element cutting step to cut the semiconductor wafer into individual semiconductor elements; and
a resin member application step to apply a resin member so that the resin member is in contact with a lateral side of the metallic member and surrounds a periphery of the metallic member, with a part of the front side of the semiconductor element being exposed,
wherein the metallic member is provided inside an outer circumference of the semiconductor element in a plan view.
12. The method for manufacturing a semiconductor device according to claim 11 , further comprising:
a semiconductor element placement step to place the front side of the front-side electrode on a protective sheet; and
a semiconductor element detachment step to detach the semiconductor element from the protective sheet.
13. A semiconductor module comprising:
the semiconductor device according to claim 1 ;
an insulating substrate having the semiconductor device thereon;
a sealing member sealing the semiconductor device and the insulating substrate; and
a cooler joined to the insulating substrate.
14. The method for manufacturing a semiconductor device according to claim 11 , wherein the resin member surrounds a periphery of the semiconductor element.
15. The method for manufacturing a semiconductor device according to claim 14 , wherein the resin member is in contact with a lateral side of the semiconductor element and covers an outer periphery portion of at least one of the front side of the semiconductor element and the back side of the semiconductor element.
16. The method for manufacturing a semiconductor device according to claim 11 , wherein
a front side of the metallic member is in contact with the back side of the back-side electrode, and
the metallic member is larger in area than the back-side electrode in a plan view.
17. The method for manufacturing a semiconductor device according to claim 15 , wherein the resin member covers an outer periphery portion of at least one of the front side of the metallic member and a hack side of the metallic member.
18. The method for manufacturing a semiconductor device according to claim 15 , wherein
the metallic member is smaller in area than the back-side electrode in a plan view,
a front side of the metallic member is in contact with the back side of the back-side electrode, and
the resin member is in contact with the back side of the back-side electrode.
19. The semiconductor device according to claim 15 , wherein
a back side of the metallic member is in contact with the front side of the front-side electrode, and
the resin member is higher or lower than a height of a front side of the metallic member.
20. The method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor element has a thickness of not less than 30 μm and not more than 150 μm.