Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with high on-state current is provided. The semiconductor device includes a transistor. The transistor includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide; a first conductor and a second conductor over the second oxide; a second insulator; a third conductor; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator. An opening reaching the second oxide is provided in the third insulator and the fourth insulator. The third oxide is positioned to cover an inner wall of the opening. The second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween. The third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween. In the channel length direction of the transistor, an angle formed by a bottom surface of the first insulator and a side surface of the first conductor facing the second conductor is smaller than 90°.
1. A semiconductor device comprising a transistor,
wherein the transistor comprises a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide over the second oxide; a first conductor and a second conductor over the second oxide; a second insulator over the third oxide; a third conductor over the second insulator; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator,
wherein an opening reaching the second oxide is provided in the third insulator and the fourth insulator,
wherein the third oxide is positioned to cover an inner wall of the opening,
wherein the second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween,
wherein the third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween,
wherein on the basis of a bottom surface of the first insulator, a level of a bottom surface of the third conductor in a region not overlapping with the second oxide is lower than a level of a bottom surface of the second oxide in a channel width direction of the transistor, and
wherein a length of the bottom surface of the third conductor in the region not overlapping with the second oxide is shorter than a length of the bottom surface of the third conductor in a region overlapping with the second oxide in a channel length direction of the transistor.
2. The semiconductor device according to claim 1 , wherein the fourth insulator comprises an oxide of aluminum.
3. The semiconductor device according to claim 1 ,
wherein the second oxide comprises In, an element M, and Zn, and
wherein the element M is Al, Ga, Y, or Sn.
4. A semiconductor device comprising a transistor,
wherein the transistor comprises a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide over the second oxide; a first conductor and a second conductor over the second oxide; a second insulator over the third oxide; a third conductor over the second insulator; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator,
wherein an opening reaching the second oxide is provided in the third insulator and the fourth insulator,
wherein the third oxide is positioned to cover an inner wall of the opening,
wherein the second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween,
wherein the third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween, and
wherein a side end portion of the fourth insulator has a curved shape when the transistor is seen from above.
5. The semiconductor device according to claim 4 , wherein the fourth insulator comprises an oxide of aluminum.
6. The semiconductor device according to claim 4 , wherein the second oxide comprises In, an element M, and Zn, and wherein the element Mis Al, Ga, Y, or Sn.