Semiconductor device including a plug
To provide a highly reliable semiconductor device that is suitable for miniaturization and an increase in density. The semiconductor device includes a first insulator over a substrate, a transistor including an oxide semiconductor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The first insulator and the third insulator have a barrier property with respect to oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor is enclosed with the first insulator and the third insulator that are in contact with each other in an edge of a region where the transistor is positioned.
1. A semiconductor device comprising:
a first transistor comprising a semiconductor;
a first insulator over the first transistor;
a second insulator over the first transistor;
a plug provided in an opening which is provided in the first insulator and the second insulator;
a second transistor under the first transistor; and
a wiring between the first transistor and the second transistor, the wiring being electrically connected to the plug,
wherein the first insulator comprises silicon and oxide,
wherein the second insulator comprises hafnium and oxide,
wherein the plug comprises a metal nitride film which is in contact with an inner surface of the opening and a tungsten film which is over the metal nitride film,
wherein the second insulator is in direct contact with an upper surface of the first insulator in a first region,
wherein the second insulator is in direct contact with a side surface of the first insulator in a second region,
wherein the first region overlaps with the first transistor, and
wherein the second region does not overlap with the first transistor.
2. The semiconductor device according to claim 1 ,
wherein the second insulator comprises a hafnium oxide.
3. The semiconductor device according to claim 1 ,
wherein the first insulator comprises a silicon oxide.
4. A semiconductor device comprising:
a first transistor comprising a semiconductor;
a first insulator over the first transistor;
a second insulator over the first transistor;
a plug provided in an opening which is provided in the first insulator and the second insulator;
a second transistor under the first transistor; and
a wiring between the first transistor and the second transistor, the wiring being electrically connected to the plug,
wherein the first insulator comprises an silicon and oxide,
wherein the second insulator comprises hafnium and oxide,
wherein the plug comprises a metal nitride film which is in contact with an inner surface of the opening and a tungsten film which is over the metal nitride film,
wherein the second insulator is in direct contact with an upper surface of the first insulator in a first region,
wherein the second insulator is in direct contact with a side surface of the first insulator in a second region,
wherein the first region overlaps with the first transistor,
wherein the second region does not overlap with the first transistor, and
wherein the opening does not overlap with the first transistor.
5. The semiconductor device according to claim 4 ,
wherein the second insulator comprises a hafnium oxide.
6. The semiconductor device according to claim 4 ,
wherein the first insulator comprises a silicon oxide.
7. The semiconductor device according to claim 4 ,
wherein a part of the metal nitride film of the plug is over the second insulator.