Integrated fan-out structure and method of forming
Semiconductor devices and methods of forming are provided. A molding compound extends along sidewalls of a first die and a second die. A redistribution layer is formed over the first die, the second die, and the molding compound. The redistribution layer includes a conductor overlying a gap between the first die and the second die. The conductor is routed at a first angle over an edge of the first die. The first angle is measured with respect to a straight line that extends along a shortest between the first die and the second die, and the first angle is greater than 0.
1. A method of forming a semiconductor device, the method comprising:
forming a molding compound extending along sidewalls of a first die and a second die; and
forming a redistribution structure over the first die, the second die, and the molding compound, the redistribution structure including a conductor overlying a portion of the molding compound that extends between the first die and the second die, the conductor being laterally routed at a first angle over an edge of the first die, the first angle being measured in a top-down view with respect to a shortest line between the first die and the second die, the first angle being greater than 0, a direction along which the conductor extends in the top-down view changes from a first direction to a second direction at a first turning point, the second direction being along the first angle, and the first direction being along a different angle than the first angle.
2. The method of claim 1 , wherein the first die comprises a first dielectric layer overlying a first substrate, and the second die comprises a second dielectric layer overlying a second substrate, an edge of the first dielectric layer is offset from an edge of the first substrate, and an edge of the second dielectric layer is offset from an edge of the second substrate.
3. The method of claim 2 , wherein the first turning point is disposed over the first dielectric layer, and the first turning point is located where the conductor is first routed to the first angle.
4. The method of claim 2 , wherein the conductor comprises a second turning point over the second dielectric layer, and the second turning point located where the conductor is first routed differently than an angle at which the conductor is routed over the edge of the second dielectric layer.
5. The method of claim 1 , wherein the conductor comprises:
a first segment partially overlying the first die and routed at the first angle;
a second segment connected to the first segment routed at a second angle; and
a third segment connected to the second segment, partially overlying the second die, and routed at a third angle, the third angle being greater than 0; and
wherein the second angle and the third angle are measured with respect to the shortest line between the first die and the second die.
6. The method of claim 1 , further comprising:
a first segment partially overlying the first die and routed at the first angle; and
a second segment partially overlying the second die and routed at a second angle;
wherein the first segment forms an acute angle with respect to an edge of the first die that faces the second die, and the second angle is an acute angle and is measured with respect to an edge of the second die that faces the first die.
7. The method of claim 1 , wherein the first angle is 45 degrees.
8. The method of claim 1 , wherein the first angle is greater than 15 degrees.
9. The method of claim 1 , further comprising:
planarizing the molding compound to expose a metal pillar of the first die and a metal pillar of the second die through the molding compound;
wherein forming the redistribution structure comprises:
depositing one or more dielectric layers over the molding compound, the first die, and the second die;
patterning the one or more dielectric layers to create an opening in the one or more dielectric layers, wherein the metal pillar of the first die and the metal pillar of the second die are exposed in the opening; and
depositing a conductive material in the opening.
10. A method, comprising:
placing a first die and a second die on a substrate;
forming a through via on the substrate;
forming a molding compound on the substrate, the molding compound extending along sidewalls of the first die and the second die, the molding compound further extending along sidewalls of the through via, a first portion of the molding compound extending between the first die and the second die; and
forming a redistribution structure over the first die, the second die, and the molding compound, the redistribution structure including a conductor overlying a portion of the molding compound that extends between the first die and the second die, the conductor being laterally routed at a first angle over an edge of the first die, the first angle being measured in a top-down view with respect to a shortest line between the first die and the second die, and the first angle being greater than 0, a direction along which the conductor extends in the top-down view changes from a first direction to a second direction at a first turning point, the second direction being along the first angle, and the first direction being along a different angle than the first angle.
11. The method according to claim 10 , wherein:
the conductor is routed in a manner that the first turning point of the conductor is located, in a plan view, a first distance from an interface between the molding compound and the first die, wherein the interface between the molding compound and the first die is offset from an edge of the first die that is closest to the second die; and
the conductor is further routed in a manner that a second turning point of the conductor is located, in a plan view, a second distance from an interface between the molding compound and the second die.
12. The method according to claim 11 , wherein the first distance and the second distance are the same.
13. The method according to claim 11 , wherein the first distance is greater than 10 um.
14. The method according to claim 11 , wherein the interface between the molding compound and the first die is offset a third distance from the edge of the first die that is closest to the second die, and the third distance is greater than or equal to 5 μm.
15. A method, comprising:
placing a first die and a second die on a substrate, the first die comprising a first contact and the second die comprising a second contact;
forming a molding material extending along sidewalls of the first die and sidewalls of the second die;
depositing one or more dielectric layers over the molding material, the first die, and the second die;
patterning the one or more dielectric layers to form an opening, the opening exposing the first contact and the second contact, and the opening continuously extending from the first contact to the second contact; and
depositing a conductive material in the opening to form a conductor, the conductor overlying a portion of the molding material that extends between the first die and the second die, the conductor being laterally routed at a first angle over an edge of the first die, the first angle being measured in a top-down view with respect to a shortest line between the first die and the second die, and the first angle being greater than o, a direction along which the conductor extends in the top-down view changes from a first direction to a second direction at a first turning point, the second direction being along the first angle, and the first direction being along a different angle than the first angle.
16. The method according to claim 15 , wherein the conductor is routed at the first angle over an edge of the second die that faces the first die.
17. The method according to claim 15 , wherein the conductor routed at a second angle over a portion of the molding material that extends between the first die and the second die, the second angle being different than the first angle, and the second angle being measured with respect to the shortest line between the first die and the second die.
18. The method according to claim 15 , wherein the first angle is 45 degrees.
19. The method according to claim 15 , wherein the first turning point overlies the first die, and the first turning point is laterally offset from the edge of the first die that faces the second die.
20. The method according to claim 15 , wherein the conductor comprises a first portion and a second portion, and the first portion is perpendicular to the second portion.