Semiconductor device
There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.
1. A semiconductor device comprising:
an emitter region of a first conductivity type, provided on a front surface side of a semiconductor substrate;
a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate;
one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions;
a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, and is in contact with the emitter region; and
a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode,
wherein a region where the second trench portion is in contact with the emitter region is narrower than a region where the first trench portion is in contact with the emitter region.
2. The semiconductor device according to claim 1 ,
wherein the emitter region extends from the second trench portion to the first trench portion.
3. The semiconductor device according to claim 1 ,
wherein the emitter region extends from the second trench portion and terminates between the first trench portion and the second trench portion.
4. The semiconductor device according to claim 1 ,
wherein the dummy trench portion is in contact with the emitter region.
5. The semiconductor device according to claim 1 ,
wherein the dummy trench portion is not in contact with the emitter region.