IP Library Granted Patent US 11,276,739
Granted Patent B2
US 11,276,739 · App. 16/765,232 · Granted Mar 15, 2022

Display substrate, adjustment method thereof, and display apparatus

Inventors: Yanan Niu (Beijing, CN); Jiushi Wang (Beijing, CN); Zhanfeng Cao (Beijing, CN); Qi Yao (Beijing, CN); Feng Zhang (Beijing, CN); Wusheng Li (Beijing, CN); Feng Guan (Beijing, CN); Lei Chen (Beijing, CN); Hongwei Tian (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
H01L27/3262H01L2227/323
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Quick Facts
Patent No.
US 11,276,739
App. No.
16/765,232
Granted
Mar 15, 2022
Kind
B2
Abstract

A display substrate is provided. The display substrate includes a substrate ( 1 ), a first transistor ( 2 ) and a second transistor ( 3 ) on the substrate ( 1 ), directions of intrinsic threshold voltage shifts of the first transistor ( 2 ) and the second transistor ( 3 ) being opposite; and a shift adjustment structure ( 4 ) on the substrate ( 1 ). The shift adjustment structure ( 4 ) may be configured to input adjustment signals to the first transistor ( 2 ) and the second transistor ( 3 ) respectively to make threshold voltages of the first transistor ( 2 ) and the second transistor ( 3 ) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

Claims (33)

1. A display substrate, comprising:

a substrate;

a first transistor and a second transistor on the substrate, directions of intrinsic threshold voltage shifts of the first transistor and the second transistor being opposite; and

a shift adjustment structure on the substrate;

wherein the shift adjustment includes a signal lead and the signal lead includes a first lead and a second lead;

the first transistor includes a first gate electrode and a first active layer and the first lead is disposed under the first active layer;

the second transistor includes a second gate electrode and a second active layer and the second lead is disposed under the second active layer; and

the first lead is electrically connected to the second gate electrode and the second lead is electrically connected to the first gate electrode; and

the shift adjustment structure is configured to input adjustment signals to the first transistor from the first lead and the second transistor from the second lead respectively to make threshold voltages of the first transistor and the second transistor shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

2. The display substrate according to claim 1 , wherein:

the shift adjustment structure comprises an adjustment signal source, a switch unit and the signal lead, the adjustment signal source is connected to the switch unit, and the switch unit is connected to the signal lead;

the adjustment signal source is configured to generate a first adjustment signal and a second adjustment signal that adjust the intrinsic threshold voltage shifts of the first transistor and the second transistor respectively;

the switch unit is configured to turn on or off the adjustment signal source; and

the signal lead comprises the first lead and the second lead, the first lead is configured to input the first adjustment signal to the first transistor, and the second lead is configured to input the second adjustment signal to the second transistor.

3. The display substrate according to claim 2 , wherein the first transistor and the second transistor are top gate transistors, the first lead is at a side of the first transistor facing the substrate, and the second lead is at a side of the second transistor facing the substrate.

4. The display substrate according to claim 3 , wherein the first lead forms a bottom gate of the first transistor, and the second lead forms a bottom gate of the second transistor, thereby making the first transistor and the second transistor respectively form a double gate structure.

5. The display substrate according to claim 3 , further comprising a first conductive layer on the substrate and at the side of the first transistor and the second transistor facing the substrate; wherein:

the first lead and the first conductive layer are made of a same material and are disposed in a same layer.

6. The display substrate according to claim 5 , wherein the second lead and a gate of the first transistor are made of a same material and are disposed in a same layer.

7. The display substrate according to claim 6 , wherein:

the adjustment signal source comprises a first signal source and a second signal source, the first signal source is configured to generate the first adjustment signal, and the second signal source is configured to generate the second adjustment signal.

8. The display substrate according to claim 7 , wherein a gate driving signal source of the first transistor is reused as the second signal source, and a gate driving signal source of the second transistor is reused as the first signal source.

9. The display substrate according to claim 1 , wherein the first transistor is a PNP transistor and the second transistor is an NPN transistor.

10. The display substrate according to claim 9 , wherein the first transistor is a low temperature polysilicon transistor and the second transistor is an oxide semiconductor transistor.

11. The display substrate according to claim 10 , further comprising a first insulating layer, wherein:

the first insulating layer is below the gate of the first transistor and below a source and a drain of the first transistor, the first insulating layer further extends between the second lead and an active layer of the second transistor;

the first insulating layer comprises via holes at positions corresponding to the gate, the source, and the drain of the first transistor, a contact layer is in each of the via holes, and the contact layer and the active layer of the second transistor are made of a same material and arranged in a same layer.

12. The display substrate according to claim 11 , further comprising a second insulating layer on the contact layer, wherein the second insulating layer also extends above the active layer of the second transistor.

13. The display substrate according to claim 12 , further comprising a gate insulating layer between the gate and the active layer of the first transistor and between the gate and the active layer of the second transistor.

14. The display substrate according to claim 2 , wherein:

the display substrate comprises a plurality of regions, each of the plurality of regions comprising the first transistor and the second transistor.

15. The display substrate according to claim 14 , wherein each of the plurality of regions further comprises the first lead and the second lead which are correspondingly configured to connect with the switch unit.

16. A display apparatus comprising the display substrate according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2020
From: NIU, YANAN; WANG, JIUSHI; CAO, ZHANFENG; YAO, QI; ZHANG, FENG; LI, WUSHENG; GUAN, FENG; CHEN, LEI; TIAN, HONGWEI
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 052699/0335 →
Priority Claims (1)
CN 201910142601.9 · Feb 26, 2019 · national
Continuity (1)
Related Publication 20210225975A1 · Jul 22, 2021
Cited By (1)
US 12,563,836