Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
A spin-orbit torque type magnetization reversal element including a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction, and a second surface opposite to the first surface is non-parallel to the plane perpendicular to the stacking direction.
1. A spin-orbit torque type magnetization reversal element comprising:
a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and
a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein
a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction,
a second surface of the spin-orbit torque wiring opposite to the first surface is non-parallel to the plane orthogonal to the laminating direction,
the spin-orbit torque wiring comprises a first layer and a second layer in order from the side closer to the magnetoresistance effect element, and
an interface between the first layer and the second layer is parallel to the first surface.
2. The spin-orbit torque type magnetization reversal element according to claim 1 ,
wherein a spin resistance of the second layer is higher than a spin resistance of the first layer.
3. The spin-orbit torque type magnetization reversal element according to claim 1 ,
wherein polarity of spin Hall angle are different between the first layer and the second layer.
4. The spin-orbit torque type magnetization reversal element according to claim 1 , wherein:
when end portions of the spin-orbit torque wiring in a second direction orthogonal to a first direction in which the spin-orbit torque wiring extends are defined as a first end portion and a second end portion; and
of the end portions of the second ferromagnetic layer in the second direction, the end portion on the side closer to the first end portion is defined as a third end portion and the end portion on the side closer to the second end portion is defined as a fourth end portion;
a distance between the first end portion and the third end portion is different from a distance between the second end portion and the fourth end portion.
5. A magnetic memory comprising a plurality of the spin-orbit torque type magnetization reversal elements according to claim 1 .
6. A high-frequency magnetic device using the spin-orbit torque type magnetization reversal element according to claim 1 .
7. A spin-orbit torque type magnetization reversal element comprising:
a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and
a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein
a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction,
a second surface opposite to the first surface of the spin-orbit torque wiring is non-parallel to the plane orthogonal to the laminating direction,
the spin-orbit torque wiring comprises a first layer and a second layer in order from the side closer to the magnetoresistance effect element, and
an interface between the first layer and the second layer is non-parallel to the first surface.
8. The spin-orbit torque type magnetization reversal element according to claim 7 ,
wherein a spin resistance of the first layer is higher than a spin resistance of the second layer.
9. The spin-orbit torque type magnetization reversal element according to claim 7 ,
wherein polarities of spin Hall angle are different between the first layer and the second layer.
10. A spin-orbit torque type magnetization reversal element comprising:
a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and
a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein
in a second direction perpendicular to a first direction in which the spin-orbit torque wiring extends, a width of a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is longer than a width of a second surface opposite to the first surface, and
the spin-orbit torque wiring comprises a first layer and a second layer in order from the side closer to the magnetoresistance effect element.
11. The spin-orbit torque type magnetization reversal element according to claim 10 , wherein:
when end portions of the spin-orbit torque wiring in the second direction are defined as a first end portion and a second end portion; and
of the end portions of the second ferromagnetic layer in the second direction, the end portion on the side closer to the first end portion is defined as a third end portion and the end portion on the side closer to the second end portion is defined as a fourth end portion;
a distance between the first end portion and the third end portion is different from a distance between the second end portion and the fourth end portion.
12. A magnetic memory comprising a plurality of the spin-orbit torque type magnetization reversal elements according to claim 10 .
13. A high-frequency magnetic device using the spin-orbit torque type magnetization reversal element according to claim 10 .