Micro-electro mechanical system device containing a bump stopper and methods for forming the same
A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
1. A micro-electro mechanical system (MEMS) device, comprising:
a MEMS substrate;
at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate; and
a cap substrate bonded to the matrix layer, wherein a first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element, and wherein the first capping surface comprises an array of downward-protruding bumps including respective portions of a bump-containing material layer, wherein the cap substrate comprises:
a vertically raised horizontal surface that overlies the first chamber and is vertically offset upward from a proximal horizontal surface of the cap substrate, which overlies the matrix layer and is most proximal to the matrix layer selected from all surfaces of the cap substrate; and
inverted trenches that vertically extend upward into the cap substrate from the vertically raised horizontal surface of the cap substrate and overlie a respective one of the downward-protruding bumps.
2. The MEMS device of claim 1 , wherein each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock.
3. The MEMS device of claim 1 , further comprising voids that are free of any solid phase material or any liquid phase material and contained within sidewalls of the inverted trenches and overlie a respective downward-protruding bump.
4. The MEMS device of claim 3 , wherein:
surfaces of the inverted trenches are lined with a material of the bump-containing material layer; and
each of the voids comprises an encapsulated cavity defined by a respective surface of the material of the bump-containing material layer without a hole therethrough.
5. The MEMS device of claim 1 , further comprising a matrix-side bonding dielectric layer located on a top surface of the matrix layer, wherein the bump-containing material layer extends beneath a bottom surface of the cap substrate and is bonded to the matrix-side bonding dielectric layer.
6. The MEMS device of claim 5 , wherein the at least one movable element comprises a second movable element located inside a second chamber that is vertically bounded by a second capping surface that overlies the second movable element, and wherein the second capping surface comprises a portion of the bump-containing material layer and has a flat bottom surface.
7. The MEMS device of claim 1 , further comprising:
a matrix-side bonding dielectric layer located on a top surface of the matrix layer; and
a cap-side bonding dielectric layer that is located between the bump-containing material layer and a vertically raised horizontal surface of the cap substrate, extends beneath a bottom surface of the cap substrate, and is bonded to the matrix-side bonding dielectric layer.
8. The MEMS device of claim 1 , wherein:
the array of downward-protruding bumps comprises a one-dimensional array or as a two-dimensional array;
the at least one movable element and the matrix layer comprise a first semiconductor material; and
the cap substrate comprises a second semiconductor material.
9. The MEMS device of claim 1 , wherein a device including the first movable element, the first chamber, and the array of downward-protruding bumps comprises an accelerometer.
10. The MEMS device of claim 1 , wherein the bump-containing material layer consists of a semiconductor material.
11. The MEMS device of claim 1 , wherein the bump-containing material layer consists of an outgassing dielectric material.
12. The MEMS device of claim 1 , wherein the bump-containing material layer comprises a semiconductor material and an outgassing dielectric material.
13. The MEMS device of claim 1 , wherein the bump-containing material layer comprises silicon oxide or silicon oxynitride.
14. The MEMS device of claim 1 , wherein a horizontal portion of the bump-containing material layer overlying or underlying a flat horizontal surface of the cap substrate has a thickness in a range from 30 nm to 600 nm.
15. The MEMS device of claim 1 , wherein matrix-side bonding dielectric layer comprises the silicon oxide and has a thickness in a range from 100 nm to 1,000 nm.
16. A micro-electro mechanical system (MEMS) device, comprising:
a MEMS substrate;
at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate;
a cap substrate bonded to the matrix layer, wherein a first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element, and wherein the first capping surface comprises an array of downward-protruding bumps including respective portions of a bump-containing material layer;
a matrix-side bonding dielectric layer located on a top surface of the matrix layer; and
a cap-side bonding dielectric layer that is located between the bump-containing material layer and a vertically raised horizontal surface of the cap substrate, extends beneath a bottom surface of the cap substrate, and is bonded to the matrix-side bonding dielectric layer.
17. The MEMS device of claim 16 , wherein the cap-side bonding dielectric layer has a thickness in a range from 100 nm to 1,000 nm.
18. The MEMS device of claim 1 , wherein the at least one movable element and the matrix layer have a same material composition and a same vertical thickness.
19. The MEMS device of claim 16 , wherein the cap-side bonding dielectric layer comprises a material selected from silicon oxide, a polymer material, and a dielectric adhesive material.
20. A micro-electro mechanical system (MEMS) device, comprising:
a MEMS substrate;
at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate; and
a cap substrate bonded to the matrix layer and comprising inverted trenches therein, wherein a first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element, and wherein the first capping surface comprises an array of downward-protruding bumps including respective portions of a bump-containing material layer,
wherein the MEMS device comprises at least one feature selected from:
a first feature that inverted trenches overlie the first capping surfaces and extend upward into the cap substrate; or
a second feature that:
the cap substrate comprises a vertically raised horizontal surface that overlies the first chamber,
the inverted trenches vertically extend upward from the vertically raised horizontal surface, and
a horizontal surface of the bump-containing material layer contacts the vertically raised horizontal surface.