Integrated bridge for die-to-die interconnects
An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.
1. A semiconductor package comprising:
a package substrate;
a first semiconductor die on the package substrate;
a second semiconductor die on the package substrate;
a third semiconductor die on the package substrate; and
a bridge interconnect at least partially embedded in the package substrate, the bridge interconnect comprising:
a first bridge section coupling the first semiconductor die to the second semiconductor die;
a second bridge section coupling the second semiconductor die to the third semiconductor die; and
a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.
2. The semiconductor package of claim 1 , wherein the first and second conductive traces comprise ground and power traces.
3. The semiconductor package of claim 1 , further comprising a passive component coupled to the first and second conductive traces.
4. The semiconductor package of claim 3 , wherein the passive component is embedded in the bridge interconnect.
5. The semiconductor package of claim 3 , wherein the passive component resides on an external surface of the package substrate.
6. The semiconductor package of claim 3 , wherein the passive component comprises a capacitor.
7. The semiconductor package of claim 6 , wherein the capacitor comprises a silicon capacitor.
8. The semiconductor package of claim 6 , wherein the capacitor comprises a multi-layer ceramic capacitor.
9. The semiconductor package of claim 1 , wherein the first bridge section and the second bridge section of the bridge interconnect further comprise traces coupling the first semiconductor die to the second semiconductor die and coupling the second semiconductor die to the third semiconductor die.
10. The semiconductor package of claim 1 , wherein the bridge interconnect further comprises a second power-ground section comprising third and fourth conductive traces coupled to the first semiconductor die.
11. The semiconductor package of claim 10 , wherein the second power-ground section is adjacent the first bridge section.
12. The semiconductor package of claim 1 , wherein the bridge interconnect comprises a lateral cross section at least partially spanning under the first semiconductor die, the second semiconductor die, and the third semiconductor die.