Method of manufacturing a semiconductor device and a semiconductor device
In a method, a first dielectric layer is formed over semiconductor fins, a second dielectric layer is formed over the first dielectric layer, the second dielectric layer is recessed below a top of each of the semiconductor fins, a third dielectric layer is formed over the recessed second dielectric layer, and the third dielectric layer is recessed below the top of the semiconductor fin, thereby forming a wall fin. The wall fin includes the recessed third dielectric layer and the recessed second dielectric layer disposed over the recessed third dielectric layer. The first dielectric layer is recessed below a top of the wall fin, a fin liner layer is formed, the fin liner layer is recessed and the semiconductor fins are recessed, and source/drain epitaxial layers are formed over the recessed semiconductor fins, respectively. The source/drain epitaxial layers are separated by the wall fin from each other.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first dielectric layer over semiconductor fins disposed over a semiconductor substrate;
forming a second dielectric layer over the first dielectric layer;
recessing the second dielectric layer below a top of each of the semiconductor fins;
forming a third dielectric layer over the recessed second dielectric layer;
recessing the third dielectric layer below the top of each of the semiconductor fins, thereby forming a wall fin disposed between the semiconductor fins, the wall fin comprising the recessed third dielectric layer and the recessed second dielectric layer disposed under the recessed third dielectric layer;
recessing the first dielectric layer below a top of the wall fin;
forming a fin liner layer over an upper portion of each of the semiconductor fins and an upper portion of the wall fin, which protrude from the recessed first dielectric layer;
etching the fin liner layer and recessing the semiconductor fins; and
forming source/drain epitaxial layers over the recessed semiconductor fins, respectively,
wherein the source/drain epitaxial layers are separated by the wall fin from each other.
2. The method of claim 1 , wherein the first dielectric layer, the second dielectric layer and the third dielectric layer are made of different dielectric materials from each other.
3. The method of claim 2 , wherein the third dielectric layer includes hafnium oxide.
4. The method of claim 3 , wherein the second dielectric layer includes silicon nitride.
5. The method of claim 4 , wherein the first dielectric layer includes silicon oxide.
6. The method of claim 2 , wherein in the etching the fin liner layer, a part of the fin liner layer formed over the upper portion of each of the semiconductor fins remains.
7. The method of claim 6 , wherein in the etching the fin liner layer, the fin liner formed over the upper portion of the wall fin is fully removed.
8. The method of claim 6 , wherein the fin liner layer includes silicon nitride.
9. The method of claim 2 , wherein the source/drain epitaxial layers are in contact with the recessed third dielectric layer of the wall fin.
10. A method of manufacturing a semiconductor device, the method comprising:
forming a first dielectric layer over a plurality of semiconductor fins disposed over a semiconductor substrate such that a first space remains between adjacent semiconductor fins;
forming a second dielectric layer over the first dielectric layer such that the first space is fully filled by the second dielectric layer;
recessing the second dielectric layer below a top of each of the plurality of semiconductor fins such that a second space is formed above the recessed second dielectric layer between adjacent semiconductor fins covered by the first dielectric layer;
forming a third dielectric layer over the recessed second dielectric layer such that the second space is fully filled by the third dielectric layer;
recessing the third dielectric layer below the top of each of the plurality of semiconductor fins, thereby forming wall fins disposed between the adjacent semiconductor fins;
recessing the first dielectric layer below a top of each of the wall fins;
forming a fin liner layer over an upper portion of each of the plurality of semiconductor fins and an upper portion of each of the wall fins, which protrude from the recessed first dielectric layer;
etching the fin liner layer and recessing the plurality of semiconductor fins; and
forming source/drain epitaxial layers over the plurality of recessed semiconductor fins, respectively,
wherein the source/drain epitaxial layers are separated by the wall fins from each other.
11. The method of claim 10 , wherein the first dielectric layer, the second dielectric layer and the third dielectric layer are made of different dielectric materials from each other.
12. The method of claim 11 , wherein the third dielectric layer includes at least one selected from the group consisting of hafnium oxide, aluminum oxide, zinc oxide and zirconium oxide.
13. The method of claim 12 , wherein the first dielectric layer includes silicon oxide and the second dielectric layer includes silicon nitride.
14. The method of claim 10 , wherein in the etching the fin liner layer, a part of the fin liner layer formed over the upper portion of each of the plurality of semiconductor fins remains, and the fin liner formed over the upper portion of each of the wall fins is fully removed.
15. The method of claim 10 , wherein an interface between the recessed second dielectric layer and the recessed third dielectric layer in each of the wall fins is located above an upper surface of the recessed first dielectric layer.
16. The method of claim 10 , wherein before the first dielectric layer is formed, a hard mask pattern is formed on the top of each of the plurality of the semiconductor fins.
17. The method of claim 10 , wherein the first space is fully filled by the second dielectric layer.
18. The method of claim 10 , further comprising:
forming a sacrificial gate structure over an upper portion of each of the plurality of semiconductor fins and an upper portion of each of the wall fins, which protrude from the recessed first dielectric layer; and
after the source/drain epitaxial layers are formed, replacing the sacrificial gate structure with a metal gate structure.
19. A method of manufacturing a semiconductor device, the method comprising:
forming a first dielectric layer over semiconductor fins disposed over a semiconductor substrate;
forming a second dielectric layer over the first dielectric layer;
recessing the second dielectric layer below a top of each of the semiconductor fins;
forming a third dielectric layer over the recessed second dielectric layer;
recessing the third dielectric layer below the top of each of the semiconductor fins, thereby forming a wall fin disposed between the semiconductor fins, the wall fin comprising the recessed third dielectric layer and the recessed second dielectric layer disposed under the recessed third dielectric layer;
recessing the first dielectric layer below a top of the wall fin;
forming a fin liner layer over an upper portion of each of the semiconductor fins and an upper portion of the wall fin, which protrude from the recessed first dielectric layer;
etching the fin liner layer and recessing the semiconductor fins; and
forming source/drain epitaxial layers over the recessed semiconductor fins, respectively,
wherein the third dielectric layer is made of a high-k dielectric material.
20. The method of claim 19 , wherein:
the source/drain epitaxial layers are in contact with the recessed third dielectric layer of the wall fin, and
an interface between the recessed second dielectric layer and the recessed third dielectric layer in the wall fin is located below an upper surface of the recessed first dielectric layer.